High Voltage - High Power GaAs FET
FEATURES
High Output Power: P1dB=46.5dBm(Typ.)
High Gain: G1dB=12.0dB(Typ.)
High PAE:
add=46%(Typ.)
Broad Band: 1.8~2.0GHz
Hermetically Sealed Package
CASE STYLE: IK
Edition 1.1
Augest 2004
1
FLL400IK-2
ESD
Class
III
2000 V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
DESCRIPTION
The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited
for use in PHS base station amplifier as long term reliability.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
o
C)
Item
Symbol
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
V
Total Power Dissipation
PTot
W
Storage Temperature
T
stg
o
C
Channel Temperature
T
ch
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
Condition
Unit
DC Input Voltage
VDS
V
Forward Gate Current
IGF
RG=10
mA
Reverse Gate Current
IGR
RG=10
mA
Operating channel temperature
Tch
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Min. Typ. Max.
Transconductance
gm
VDS=5V,IDS=8.0A
-
9.0
-
S
Pinch-off Voltage
Vp
VDS=5V,IDS=1.08A
-1.0
-2.0
-3.5
V
Gate-Source Breakdown Voltage
VGSO
IGS=-1.08mA
-5.0
-
-
V
Output Power at 1dB G.C.P.
P1dB
45.5
46.5
-
dBm
Power Gain at 1dB G.C.P.
G1dB
11.5
12.0
-
dB
Drain Current
Idsr
-
7.5
8.5
A
Power-added Efficiency
add
-
46.0
-
%
Thermal Resistance
Rth
-
1.3
1.6
o
C/W
Unit
Rating
15
-5
93.7
-65 to +175
175
<54.4
145
Limit
Item
Symbol
Condition
Limit
>-17.4
V
DD
=12V
f=1.9GHz
IDS(DC)=4A
12
3
High Voltage - High Power GaAs FET
FLL400IK-2
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong
Tel: +852-2377-0227
Fax: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
Tel +81-55-275-4411
Fax +81-55-275-9461
Sales Division
1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan
Tel +81-45-853-8156
Fax +81-45-853-8170
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