EMA109
UPDATED
11/11/2004
0.5 3.0 GHz High Linearity Power MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
Dimension: 760um X 700um
FEATURES
0.5 3.0 GHz BANDWIDTH
24.0dBm TYPICAL OUTPUT POWER
-45dBc OIMD3 @ 14dBm EACH TONE Pout
11.0 dB TYPICAL POWER GAIN
SINGLE BIAS SUPPLY
100% DC TESTED
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETER/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
0.5
3.0
GHz
P
1dB
Power at 1dB Compression V
DD
= 8.0V, F = 2.4G
23.0 24.0
dBm
Gss
Small Signal Gain V
DD
= 8.0V, F = 2.4G
10.0
11.0
dB
IMD3
Output 3
rd
Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 14dBm
V
DD
= 8.0V, F = 2.4G
-45 -42 dBc
RL
IN
Input Return Loss V
DD
= 8.0V
-12
-8
dB
RL
OUT
Output Return Loss V
DD
= 8.0V
-12
-8
dB
I
DD
Drain Current
90
120
150
mA
R
TH
Thermal Resistance
1
70
o
C/W
Note: 1. Overall Rth depends on die attach.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DD
Power Supply Voltage
8 V
V
GG
Gate Voltage
-3 V
I
DD
Drain
Current
IDSS
I
GSF
Forward Gate Current
10 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
1.4 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation P
T
< (T
CH
T
HS
)/R
TH
; where T
HS
= temperature of heatsink,
and P
T
= (V
DD
* I
DD
) (P
OUT
P
IN
).
EMA109
UPDATED
11/11/2004
0.5 3.0 GHz High Linearity Power MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
Typical Performance:
1. P-1 VS VD
EMA109C P-1(dBm) VS VD
20
21
22
23
24
25
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
P-
1
(
d
B
m
)
VD=5.5V
VD=6.5V
VD=8V
2. G-1 VS VD
EMA109C G-1(dB) VS VD
9
10
11
12
13
14
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
G-
1
(
d
B
)
VD=5.5V
VD=6.5V
VD=8V
EMA109
UPDATED
11/11/2004
0.5 3.0 GHz High Linearity Power MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
Typical Performance:
3. OIP3 VS VD
EMA109C OIP3 VS VD
25
27
29
31
33
35
37
39
41
43
0
5
10
15
20
Each Tone Pout (dBm)
OI
P
3
(
d
B
m
)
VD=8V
VD=6.5V
VD=5.5V
4. Small Signal Performance
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3
Frequency (GHz)
EMA109C Small Signal Performance
-30
-25
-20
-15
-10
-5
0
5
10
15
20
DB(|S[1,1]|) *
DB(|S[2,1]|) *
DB(|S[2,2]|) *
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