2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
2N65
17
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Refer to 2N6515 for graphs
Electrical Characteristics
T
a
=25
C unless otherwise noted
* Pulse Test: Pulse Width
300
s, Duty Cycle
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
350
V
V
CEO
Collector-Emitter Voltage
350
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current
500
mA
P
C
Collector Power Dissipation
625
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
* Collector-Emitter Breakdown Voltage
I
C
=1mA, I
B
=0
350
V
BV
CBO
Collector-Base Breakdown Voltage
I
C
=100
A, I
E
=0
350
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=10
A, I
C
=0
6
V
I
CBO
Collector Cut-off Current
V
CB
=250V, I
E
=0
50
nA
I
EBO
Emitter Cut-off Current
V
EB
=5V, I
C
=0
50
nA
h
FE
* DC Current Gain
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V
20
30
30
20
15
200
200
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=10mA, I
B
=1mA
I
C
=20mA, I
B
=2mA
I
C
=30mA, I
B
=3mA
I
C
=50mA, I
B
=5mA
0.3
0.35
0.5
1
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=10mA, I
B
=1mA
I
C
=20mA, I
B
=2mA
I
C
=30mA, I
B
=3mA
0.75
0.85
0.9
V
V
V
C
ob
Output Capacitance
V
CB
=20V, I
E
=0, f=1MHz
6
pF
f
T
* Current Gain Bandwidth Product
I
C
=10mA, V
CE
=20V,
f=20MHz
40
200
MHz
V
BE
(on)
Base Emitter On Voltage
I
C
=100mA, V
CE
=10V
2
V
2N6517
High Voltage Transistor
Collector-Emitter Voltage: V
CEO
=350V
Collector Dissipation: P
C
(max)=625mW
Complement to 2N6520
Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base)
1. Emitter 2. Base 3. Collector
TO-92
1
2002 Fairchild Semiconductor Corporation
Rev. I1
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