2N7002MTF
BV
DSS
= 60 V
R
DS(on)
= 5.0
I
D
= 200 mA
60
115
73
800
20
0.2
0.16
- 55 to +150
62.5
--
!
Lower R
DS(on)
!
Improved Inductive Ruggedness
!
Fast Switching Times
!
Lower Input Capacitance
!
Extended Safe Operating Area
!
Improved High Temperature Reliability
Advanced Small Signal MOSFET
Thermal Resistance
Junction-to-Ambient
R
JA
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
)
Continuous Drain Current (T
C
=100
)
Drain Current-Pulsed
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Characteristic
Value
Units
Symbol
I
DM
V
GS
I
D
P
D
T
J
, T
STG
mA
V
W
W/
mA
V
DSS
V
SOT-23
1.Gate 2. Source 3. Drain
Rev. A1
Product Summary
Part Number BV
DSS
R
DS
(on)
I
D
2N7002 60V 5.0
115mA
N-CHANNEL
Small Signal MOSFET
Electrical Characteristics
(T
C
=25
unless otherwise specified)
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
2N7002MTF
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
Drain-to-Source Leakage Current
On-State Drain-Source Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
60
1.0
-
-
-
-
0.5
-
0.08
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
100
-100
1.0
500
-
5.0
-
50
25
5
20
-
20
-
V
V
nA
A
A
S
pF
ns
V
GS
= 0V, I
D
= 250
A
V
DS
= V
GS
, I
D
= 250
A
V
GS
= 20V
V
GS
= -20V
V
GS
= 40V
V
GS
= 40V, T
C
= 125
V
DS
= 10V, V
GS
= 10V
V
GS
= 10V, I
D
= 0.5A
V
DS
= 15V, I
D
= 0.2A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
DD
= 30V, I
D
= 0.2A
R
G
= 25
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
Pulse Test : Pulse Width = 250
s, Duty Cycle
2%
Essentially Independent of Operating Temperature
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
I
S
I
SD
V
SD
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
-
-
-
-
-
-
115
800
1.5
mA
mA
V
Integral reverse pn-diode
In the MOSFET
T
A
= 25
, I
S
= 115mA
V
GS
= 0V
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