2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC237/
238/
239
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CES
Collector-Emitter Voltage : BC237
: BC238/239
50
30
V
V
V
CEO
Collector-Emitter Voltage : BC237
: BC238/239
45
25
V
V
V
EBO
Emitter-Base Voltage : BC237
: BC238/239
6
5
V
V
I
C
Collector Current (DC)
100
mA
P
C
Collector Power Dissipation
500
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
: BC237
: BC238/239
I
C
=2mA, I
B
=0
45
25
V
V
BV
EBO
Emitter Base Breakdown Voltage
: BC237
: BC238/239
I
E
=1
A, I
C
=0
6
5
V
V
I
CES
Collector Cut-off Current
: BC237
: BC238/239
V
CE
=50V, V
BE
=0
V
CE
=30V, V
BE
=0
0.2
0.2
15
15
nA
nA
h
FE
DC Current Gain
V
CE
=5V, I
C
=2mA
120
800
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
0.07
0.2
0.2
0.6
V
V
V
BE
(sat)
Collector-Base Saturation Voltage
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
0.73
0.87
0.83
1.05
V
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
=5V, I
C
=2mA
0.55
0.62
0.7
V
f
T
Current Gain Bandwidth Product
V
CE
=3V, I
C
=0.5mA, f=100MHz
V
CE
=5V, I
C
=10mA, f=100MHz
150
85
250
MHz
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
3.5
6
pF
C
ib
Input Base Capacitance
V
EB
=0.5V, I
C
=0, f=1MHz
8
pF
NF
Noise Figure
: BC237/238
: BC239
: BC239
V
CE
=5V, I
C
=0.2mA,
f=1KHz R
G
=2K
V
CE
=5V, I
C
=0.2mA
R
G
=2K
, f=30~15KHz
2
10
4
4
dB
dB
dB
Classification
A
B
C
h
FE
120 ~ 220
180 ~ 460
380 ~ 800
BC237/238/239
Switching and Amplifier Applications
Low Noise: BC239
1. Collector 2. Base 3. Emitter
TO-92
1
2002 Fairchild Semiconductor Corporation
BC237/
238/
239
Rev. A2, August 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. Transfer Characteristic
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Output Capacitance
Figure 6. Current Gain Bandwidth Product
0
2
4
6
8
10
12
14
16
18
20
0
20
40
60
80
100
I
B
= 50
A
I
B
= 100
A
I
B
= 150
A
I
B
= 200
A
I
B
= 250
A
I
B
= 300
A
I
B
= 350
A
I
B
= 400
A
I
C
[
m
A]
,
COL
L
E
C
T
O
R CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
V
CE
= 5V
I
C
[
m
A], COL
L
ECT
O
R CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
1
10
100
1000
1
10
100
1000
V
CE
= 5V
h
FE
, DC C
URRE
NT
G
A
I
N
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
10
100
1000
10000
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
),
V
CE
(
s
a
t
)
[
m
V
]
,
SAT
U
R
AT
I
O
N VO
L
T
A
G
E
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
0.1
1
10
100
f=1MHz
I
E
= 0
C
ob
[pF
], CA
P
A
C
I
T
A
NC
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
100
1
10
100
1000
V
CE
= 5V
f
T
, CURR
E
N
T
G
A
IN-
B
A
N
DWIDT
H
P
R
O
DUCT
I
C
[mA], COLLECTOR CURRENT
2002 Fairchild Semiconductor Corporation
Rev. I1
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intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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As used herein:
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Advance Information
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Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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The datasheet is printed for reference information only.
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