2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC337/
338
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CES
Collector-Emitter Voltage
: BC337
: BC338
50
30
V
V
V
CEO
Collector-Emitter Voltage
: BC337
: BC338
45
25
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
800
mA
P
C
Collector Power Dissipation
625
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
: BC337
: BC338
I
C
=10mA, I
B
=0
45
25
V
V
BV
CES
Collector-Emitter Breakdown Voltage
: BC337
: BC338
I
C
=0.1mA, V
BE
=0
50
30
V
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=0.1mA, I
C
=0
5
V
I
CES
Collector Cut-off Current
: BC337
: BC338
V
CE
=45V, I
B
=0
V
CE
=25V, I
B
=0
2
2
100
100
nA
nA
h
FE1
h
FE2
DC Current Gain
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
100
60
630
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=500mA, I
B
=50mA
0.7
V
V
BE
(on)
Base Emitter On Voltage
V
CE
=1V, I
C
=300mA
1.2
V
f
T
Current Gain Bandwidth Product
V
CE
=5V, I
C
=10mA, f=50MHz
100
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
12
pF
Classification
16
25
40
h
FE1
100 ~ 250
160 ~ 400
250 ~ 630
h
FE2
60-
100-
170-
BC337/338
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
Complement to BC327/BC328
1. Collector 2. Base 3. Emitter
TO-92
1
2002 Fairchild Semiconductor Corporation
Rev. I1
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