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Электронный компонент: BCW33

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2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
BCW32
Absolute Maximum Ratings *
T
a
=25
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
C unless otherwise noted
Thermal Characteristics
T
A
=25
C unless otherwise noted
Device mounted on FR-4PCB 40mm
40mm
1.5mm
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
32
V
V
CBO
Collector-Base Voltage
32
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector current (DC)
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 ~ +150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 2.0mA, I
B
= 0
32
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10
A, I
B
= 0
32
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
C
= 10
A, I
C
= 0
5.0
V
I
CBO
Collector Cutoff Current
V
CB
= 32V, I
E
= 0
V
CB
= 32V, I
E
= 0, T
A
= 100
C
100
10
nA
A
On Characteristics
h
FE
DC Current Gain
I
C
= 2.0mA, V
CE
= 5.0V
200
450
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 0.5mA
0.25
V
V
BE(on)
Base-Emitter On Voltage
I
C
= 2.0mA, V
CE
= 5.0V
0.55
0.7
V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product
I
C
= 2.0mA, V
CE
= 5.0V
f = 35MHz
200
C
obo
Output Capacitance
V
CB
= 10V, I
E
= 0, f = 1.0MHz
4.0
pF
NF
Noise Figure
I
C
= 0.2mA, V
CE
= 5.0V
R
S
= 2.0k
, f = 1.0kHz
B
W
= 200Hz
10
dB
Symbol
Parameter
Max.
Units
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
BCW32
NPN General Purpose Amplifier
This device is designed for general purpose applications at collector
currents to 300mA.
Sourced from process 10.
1. Base 2. Emitter 3. Collector
1
2
3
SOT-23
Mark: D2
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2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
BCW32
Typical Characteristics
Figure 1. Typical Pulsed Current Gain vs
Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
Figure 6. Input and Outtput Capacitance
vs Reverse Voltage
10
20
30
50
100
200 300
500
0
100
200
300
400
I - COLLECTOR CURRENT (mA)
h
- TYP
I
CA
L PULSED
CURR
ENT GA
IN
C
FE
125
25
- 40
Vce = 5V
C
C
C
1
10
100
400
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V

-
COL
L
ECT
O
R-
EM
ITT
E
R VO
L
T
A
GE

(
V
)
C
C
ESA
T
25
- 40
125
= 10



C



C



C
0.1
1
10
100
300
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V

-

CO
LLE
CT
O
R
-
E
M
I
TTE
R VO
L
T
A
G
E
(
V
)
= 10
C
B
ESA
T
25
- 40
125



C



C



C
1
10
100
500
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V

-
BASE-
EM
I
TTER

O
N
VO
L
T
A
GE

(
V
)
C
BE
O
N
V = 5V
CE
25
- 40
125



C



C



C
25
50
75
100
125
150
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I

- CO
LLEC
T
OR

CU
RREN
T
(n
A)
A
CBO
V = 60V
CB
0.1
1
10
100
0.1
1
10
100
V - COLLECTOR VOLTAGE (V)
CA
P
A
CIT
AN
C
E
(
p
F
)
Cib
Cob
f = 1.0 MHz
ce
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2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
BCW32
Typical Characteristics
(Continued)
Figure 7. Switching Times vs
Collector Current
Figure 8. Power Dissipation vs
Ambient Temperature
10
20
30
50
100
200
300
0
30
60
90
120
150
180
210
240
270
300
I - COLLECTOR CURRENT (mA)
T
I
ME
(n
S
)
IB1 = IB2 = Ic / 10
V = 10 V
C
cc
t
s
t
d
t
f
t
r
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P
-
POW
E
R DI
SSIP
A
TION (
m
W
)
D
o
SOT-23
background image
Package Dimensions
BCW32
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40
0.03
2.90
0.10
0.95
0.03
0.95
0.03
1.90
0.03
0.508REF
0.97REF
1.30
0.10
0.45~0.60
2.40
0.10
+0.05
0.023
0.20 MIN
0.40
0.03
SOT-23
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
background image
2002 Fairchild Semiconductor Corporation
Rev. I1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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