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Электронный компонент: BD177

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2000 Fairchild Semiconductor International
Rev. A, February 2000
BD175/
177/
179
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW=300
s, duty Cycle=1.5% Pulsed
h
FE
Classificntion
* Classification 16: Only BD175
Symbol
Parameter
Value
Units
V
CBO
*Collector-Base Voltage : BD175
: BD177
: BD179
45
60
80
V
V
V
V
CEO
Collector-Emitter Voltage : BD175
: BD177
: BD179
45
60
80
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
3
A
I
CP
*Collector Current (Pulse)
7
A
P
C
Collector Dissipation (T
C
=25
C)
30
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BD175
: BD177
: BD179
I
C
= 100mA, I
B
= 0
45
60
80
V
V
V
I
CBO
Collector Cut-off Current : BD175
: BD177
: BD179
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
100
100
100
A
A
A
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
1
mA
h
FE1
h
FE2
* DC Current Gain
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 1A
40
15
250
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 1A, I
B
= 0.1A
0.8
V
V
BE
(on)
* Base-Emitter On Voltage
V
CE
= 2V, I
C
= 1A
1.3
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 250mA
3
MHz
Classification
6
10
16
h
FE1
40 ~ 100
63 ~ 160
100 ~ 250
BD175/177/179
Medium Power Linear and Switching
Applications
Complement to BD 176/178/180 respectively
1
TO-126
1. Emitter 2.Collector 3.Base
2000 Fairchild Semiconductor International
BD175/
177/
179
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area
Figure 4. Power Derating
0.01
0.1
1
10
1
10
100
1000
V
CE
= 2V
h
FE
,

DC CU
RRENT G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.1
1
10
0.01
0.1
1
10
V
CE
(sat)
V
BE
(sat)
I
C
= 10 I
B
V
BE
(s
a
t
),
V
CE
(
s
a
t
)
[
V], SAT
U
R
A
T
I
O
N

V
O
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
1
10
100
0.1
1
10
I
C
MAX. (Continuous)
B
D
179
B
D
177
B
D
175
10
s
10
0
s
1m
s
DC
I
C
MAX. (Pulsed)
I
C
[
A
]
,
CO
L
L
E
CT
O
R
CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
P
C
[W
], PO
W
E
R
D
I
SS
I
P
AT
IO
N
T
C
[
o
C], CASE TEMPERATURE
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
BD175/
177/
179
Dimensions in Millimeters
3.25
0.20
8.00
0.30
3.20
0.10
0.75
0.10
#1
0.75
0.10
2.28TYP
[2.28
0.20]
2.28TYP
[2.28
0.20]
1.60
0.10
11.00
0.20
3.90
0.10
14.20MAX
16.10
0.20
13.06
0.30
1.75
0.20
(0.50)
(1.00)
0.50
+0.10
0.05
TO-126
2000 Fairchild Semiconductor International
Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
E
2
CMOSTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrench
QFETTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
UHCTM
VCXTM
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when properly used in accordance with instructions for use
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