2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD433/
435/
437
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
V
CES
Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
V
CEO
Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
4
A
I
CP
*Collector Current (Pulse)
7
A
I
B
Base Current
1
A
P
C
Collector Dissipation (T
C
=25
C)
36
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
Medium Power Linear and Switching
Applications
Complement to BD434, BD436 and BD438 respectively
BD433/435/437
1
TO-126
1. Emitter 2.Collector 3.Base
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD433/
435/
437
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW=300
s, duty Cycle=1.5% Pulsed
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
: BD433
: BD435
: BD437
I
C
= 100mA, I
B
= 0
22
32
45
V
V
V
I
CBO
Collector Cut-off Current
: BD433
: BD435
: BD437
V
CB
= 22V, I
E
= 0
V
CB
= 32V, I
E
= 0
V
CB
= 45V, I
E
= 0
100
100
100
A
A
A
I
CEO
Collector Cut-off Current
: BD433
: BD435
: BD437
V
CE
= 22V, V
BE
= 0
V
CE
= 32V, V
BE
= 0
V
CE
= 45V, V
BE
= 0
100
100
100
A
A
A
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
1
mA
h
FE
* DC Current Gain
: BD433/435
: BD437
: ALL DEVICE
: BD433/435
: BD437
V
CE
= 5V, I
C
= 10mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 1V, I
C
= 2A
40
30
85
50
40
130
130
140
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: BD433
: BD435
: BD437
I
C
= 2A, I
B
= 0.2A
0.2
0.2
0.2
0.5
0.5
0.6
V
V
V
V
BE
(on)
* Base-Emitter ON Voltage
: BD433
: BD435
: BD437
V
CE
= 1V, I
C
= 2A
1.1
1.1
1.2
V
V
V
f
T
Current Gain Bandwidth Product
V
CE
= 1V, I
C
= 250mA
3
MHz
2001 Fairchild Semiconductor Corporation
BD433/
435/
437
Rev. A1, June 2001
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage
Figure 4. Collector-Base Capacitance
Figure 5. Safe Operating Area
Figure 6. Power Derating
0.01
0.1
1
10
100
1
10
100
1000
V
CE
= 1V
h
FE
, DC C
URRENT
GAI
N
I
C
[A], COLLECTOR CURRENT
0.1
1
10
0.01
0.1
1
I
C
= 10 I
B
V
CE
(
s
a
t
)
[
V
]
,
SAT
U
R
AT
I
O
N VO
L
T
A
G
E
I
C
[A], COLLECTOR CURRENT
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
CE
= 1V
I
C
[A], CO
L
L
ECT
O
R CUR
RENT
V
BE
[V], BASE-EMITTER VOLTAGE
0.1
1
10
100
1000
1
10
100
1000
C
CB
O
(
p
F
)
,
CO
L
L
E
CTO
R
BA
SE CAPACI
T
ANCE
V
CB
[V], COLLECTOR BASE VOLTAGE
1
10
100
0.1
1
10
10
s
100
s
1m
s
10m
s
BD433
I
C
MAX. (Pulsed)
BD437
BD435
DC
I
C
Max. (Continuous)
I
C
[A],
COL
L
ECT
O
R
CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
200
0
6
12
18
24
30
36
42
48
P
C
[W
], P
O
W
E
R
D
I
S
S
I
P
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
Package Demensions
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD433/
435/
437
Dimensions in Millimeters
3.25
0.20
8.00
0.30
3.20
0.10
0.75
0.10
#1
0.75
0.10
2.28TYP
[2.28
0.20]
2.28TYP
[2.28
0.20]
1.60
0.10
11.00
0.20
3.90
0.10
14.20MAX
16.10
0.20
13.06
0.30
1.75
0.20
(0.50)
(1.00)
0.50
+0.10
0.05
TO-126
2001 Fairchild Semiconductor Corporation
Rev. H2
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intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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