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Электронный компонент: BD537

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2000 Fairchild Semiconductor International
Rev. A, February 2000
BD533/
535/
537
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW =300
s, duty Cycle =1.5% Pulsed
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage : BD533
: BD535
: BD537
45
60
80
V
V
V
V
CES
Collector-Emitter Voltage : BD533
: BD535
: BD537
45
60
80
V
V
V
V
CEO
Collector-Emitter Voltage : BD533
: BD535
: BD537
45
60
80
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
8
A
I
B
Base Current
1
A
P
C
Collector Dissipation (T
C
=25
C)
50
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current : BD533
: BD535
: BD537
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
100
100
100
A
A
A
I
CES
Collector Cut-off Current : BD533
: BD535
: BD537
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
100
100
100
A
A
A
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
1
mA
h
FE
* DC Current Gain : BD533/535
: BD537
: ALL DEVICE
: BD533/535
: BD537
V
CE
= 5V, I
C
= 10mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 2A
20
15
40
25
15
h
FE
h
FE
Groups
J
: ALL DEVICE
K
: ALL DEVICE

V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 3A
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 3A
30
15
40
20
75
100
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 2A, I
B
= 0.2A
I
C
= 6A, I
B
= 0.6A
0.8
0.8
V
V
V
BE
(on)
* Base-Emitter ON Voltage
V
CE
= 2V, I
C
= 2A
1.5
V
f
T
Current Gain Bandwidth Product
V
CE
= 1V, I
C
= 500mA
3
12
MHz
BD533/535/537
Medium Power Linear and Switching
Applications
Low Saturation Voltage
Complement to BD534, BD536 and BD538 respectively
1.Base 2.Collector 3.Emitter
1
TO-220
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2000 Fairchild Semiconductor International
BD533/
535/
537
Rev. A, February 2000
Typical characteristics
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Safe Operating Area
Figure 5. Power Derating
0.01
0.1
1
10
10
100
1000
V
CE
= 2V
h
FE
,
DC C
URRENT
GAIN
I
C
[A], COLLECTOR CURRENT
0.1
1
10
0.01
0.1
1
I
C
= 10 I
B
V
CE
(
s
a
t
)
[
V
]
, SAT
U
R
AT
IO
N
VO
L
T
A
G
E
I
C
[A], COLLECTOR CURRENT
0.1
1
10
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
I
C
= 10 I
B
V
BE
(
s
a
t
)
[
V],
SA
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
1
10
100
0.1
1
10
BD533
100
s
10
s
1m
s
10m
s
BD537
BD535
DC
I
C
Max.
I
C
[A
], C
O
L
L
E
C
T
O
R C
URRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
200
0
10
20
30
40
50
60
70
80
P
C
[W
], PO
W
E
R
D
I
SS
I
P
AT
IO
N
T
C
[
o
C], CASE TEMPERATURE
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4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
BD533/
535/
537
Dimensions in Millimeters
background image
2000 Fairchild Semiconductor International
Rev. E
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2
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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