2000 Fairchild Semiconductor International
Rev. A, February 2000
BD675A/
677A/
679A/
681
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW=300
s, duty Cycle=1.5% Pulsed
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage : BD675A
: BD677A
: BD679A
: BD681
45
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage : BD675A
: BD677A
: BD679A
: BD681
45
60
80
100
V
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
4
A
I
CP
*Collector Current (Pulse)
6
A
I
B
Base Current
100
mA
P
C
Collector Dissipation (T
C
=25
C)
40
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
*Collector-Emitter Sustaining Voltage
: BD675A
: BD677A
: BD679A
: BD681
I
C
= 50mA, I
B
= 0
45
60
80
100
V
V
V
V
I
CBO
Collector-Base Voltage : BD675A
: BD677A
: BD679A
: BD681
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, V
BE
= 0
200
200
200
200
A
A
A
A
I
CEO
Collector Cut-off Current : BD675A
: BD677A
: BD679A
: BD681
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
500
500
500
500
A
A
A
A
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
2
mA
h
FE
* DC Current Gain : BD675A/677A/679A
: BD681
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 1.5A
750
750
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: BD675A/677A/679A
: BD681
I
C
= 2A, I
B
= 40mA
I
C
= 1.5A, I
B
= 30mA
2.8
2.5
V
V
V
BE
(on)
* Base-Emitter ON Voltage : BD675A/677A/679A
: BD681
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 1.5A
2.5
2.5
V
V
BD675A/677A/679A/681
Medium Power Linear and Switching
Applications
Medium Power Darlington TR
Complement to BD676A, BD678A, BD680A and BD682 respectively
1
TO-126
1. Emitter 2.Collector 3.Base
2000 Fairchild Semiconductor International
BD675A/
677A/
679A/
681
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
Figure 5. Power Derating
0.1
1
10
100
1000
10000
V
CE
= 3V
h
FE
, DC
CURRE
NT
G
A
IN
I
C
[A], COLLECTOR CURRENT
0.1
1
10
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Ic = 250 I
B
V
CE
(
s
a
t
)
[
V],
SA
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
V
CE
= 3V
I
C
[A], CO
L
L
ECT
O
R CUR
RENT
V
BE
[V], BASE-EMITTER VOLTAGE
1
10
100
1000
0.1
1
10
BD677A
10
s
I
C
(max). Pulsed
BD681
BD679A
BD675A
100
s
1ms
10ms
DC
I
C
(max). Continuous
I
C
[A], C
O
L
L
ECT
O
R C
URRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
200
0
10
20
30
40
50
P
C
[W
], P
O
W
E
R
D
I
S
S
I
P
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
BD675A/
677A/
679A/
681
Dimensions in Millimeters
3.25
0.20
8.00
0.30
3.20
0.10
0.75
0.10
#1
0.75
0.10
2.28TYP
[2.28
0.20]
2.28TYP
[2.28
0.20]
1.60
0.10
11.00
0.20
3.90
0.10
14.20MAX
16.10
0.20
13.06
0.30
1.75
0.20
(0.50)
(1.00)
0.50
+0.10
0.05
TO-126
2000 Fairchild Semiconductor International
Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACExTM
BottomlessTM
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E
2
CMOSTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrench
QFETTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
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UHCTM
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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Advance Information
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Design
This datasheet contains the design specifications for
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First Production
This datasheet contains preliminary data, and
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