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2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW23/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
45
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
45
60
80
100
V
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
6
A
I
CP
*Collector Current (Pulse)
8
A
I
B
Base Current
0.2
A
P
C
Collector Dissipation (T
C
=25
C)
50
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
BDW23/A/B/C
Hammer Drivers, Audio Amplifiers
Applications
Power Darlington TR
Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
1.Base 2.Collector 3.Emitter
1
TO-220
2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW23/A/B/C
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW =300
s, duty Cycle =1.5% Pulsed
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
s
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
I
C
= 100mA, I
B
= 0
45
60
80
100
V
V
V
V
I
CBO
Collector Cut-off Current
: BDW23
: BDW23A
: BDW23B
: BDW23C
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
200
200
200
200
A
A
A
A
I
CEO
Collector Cut-off Current
: BDW23
: BDW23A
: BDW23B
: BDW23C
V
CE
= 22V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
500
500
500
500
A
A
A
A
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
2
mA
h
FE
* DC Current Gain
V
CE
= 3V, I
C
= 1A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 6A
1000
750
100
20000
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 2A, I
B
= 8mA
I
C
= 6A, I
B
= 60mA
2
3
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= 2A, I
B
= 8mA
2.5
V
V
BE
(on)
* Base-Emitter ON Voltage
V
CE
= 3V, I
C
= 1A
V
CE
= 3V, I
C
= 6A
2.5
3
V
V
V
F
* Parallel Diode Forward Voltage
I
F
= 2A
1.8
V
2000 Fairchild Semiconductor International
BDW23/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
Figure 5. Power Derating
0.1
1
10
100
1000
10000
V
CE
= 3V
h
FE
, DC
CURRENT
G
A
IN
I
C
[A], COLLECTOR CURRENT
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
V
CE
= 3V
I
C
[A], CO
L
L
ECT
O
R CUR
RENT
V
BE
[V], BASE-EMITTER VOLTAGE
0.1
1
10
0.0
0.4
0.8
1.2
1.6
2.0
2.4
I
C
= 250 I
B
V
CE
(
s
a
t
)
[
V],
SA
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
0.1
1
10
100
BDW23A
10
s
I
C
(max). Pulsed
BDW23C
BDW23B
BDW23
100
s
1ms
10ms
DC
I
C
(max).
Continuous
I
C
[
A
]
,
CO
L
L
ECT
O
R CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
200
0
10
20
30
40
50
60
70
80
P
C
[W
], PO
W
E
R
D
I
SS
I
P
AT
IO
N
T
C
[
o
C], CASE TEMPERATURE
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW23/A/B/C
Dimensions in Millimeters
2000 Fairchild Semiconductor International
Rev. E
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This datasheet contains the design specifications for
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