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2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW24/A/B/C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
- 45
- 60
- 80
- 100
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
- 45
- 60
- 80
- 100
V
V
V
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 6
A
I
CP
*Collector Current (Pulse)
- 8
A
I
B
Base Current
- 0.2
A
P
C
Collector Dissipation (T
C
=25
C)
50
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
BDW24/A/B/C
Hammer Drivers, Audio Amplifiers
Applications
Power Darlington TR
Complement to BDW23, BDW23A, BDW23B and BDW23C respectively
1.Base 2.Collector 3.Emitter
1
TO-220
2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW24/A/B/C
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW=300
s, duty Cycle =1.5% Pulsed
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
I
C
= - 100mA, I
B
= 0
- 45
- 60
- 80
- 100
V
V
V
V
I
CBO
Collector Cut-off Current
: BDW24
: BDW24A
: BDW24B
: BDW24C
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
- 200
- 200
- 200
- 200
A
A
A
A
I
CEO
Collector Cut-off Current
: BDW24
: BDW24A
: BDW24B
: BDW24C
V
CE
= - 22V, I
B
= 0
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
V
CE
= - 50V, I
B
= 0
- 500
- 500
- 500
- 500
A
A
A
A
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 2
mA
h
FE
* DC Current Gain
V
CE
= - 3V, I
C
= - 1A
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 6A
1000
750
100
20000
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 2A, I
B
= - 8mA
I
C
= - 6A, I
B
= - 60mA
- 2
- 3
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= - 2A, I
B
= - 8mA
- 2.5
V
V
BE
(on)
* Base-Emitter ON Voltage
V
CE
= - 3V, I
C
= - 1A
V
CE
= - 3V, I
C
= - 6A
- 2.5
- 3
V
V
V
F
* Parallel Diode Forward Voltage
I
F
= - 2A
- 1.8
V
2000 Fairchild Semiconductor International
BDW24/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
Figure 5. Power Derating
-0.1
-1
-10
100
1000
10000
V
CE
= -3V
h
FE
, DC
CURRENT
G
A
IN
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
I
C
= 250 I
B
V
CE
(
s
at)
[
V
], S
A
T
URA
T
ION
V
O
LT
A
G
E
I
C
[A], COLLECTOR CURRENT
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0
-0
-1
-2
-3
-4
-5
-6
-7
-8
V
CE
= -3V
I
C
[
A
]
,
CO
L
L
E
CT
O
R
CURR
E
N
T
V
BE
[V], BASE-EMITTER VOLTAGE
-1
-10
-100
-1000
-0.1
-1
-10
-100
BDW24A
10
s
I
C
(max). Pulsed
BDW24C
BDW24B
BDW24
100
s
1ms
10ms
DC
I
C
(max).
Continuous
I
C
[A
], CO
L
L
E
C
T
O
R
C
URRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
200
0
10
20
30
40
50
60
70
80
P
C
[W
], P
O
W
E
R
D
I
S
S
I
P
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW24/A/B/C
Dimensions in Millimeters
2000 Fairchild Semiconductor International
Rev. E
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Advance Information
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