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2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW93/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Thermal Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
45
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
45
60
80
100
V
V
V
V
I
C
Collector Current (DC)
12
A
I
CP
*Collector Current (Pulse)
15
A
I
B
Base Current
0.2
A
P
C
Collector Dissipation (T
C
=25
C)
80
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
Symbol
Parameter
Value
Units
R
jc
Thermal Resistance
Junction to Case
1.5
C/W
BDW93/A/B/C
Hammer Drivers,
Audio Amplifiers Applications
Power Darlington TR
Complement to BDW94, BDW94A, BDW94B and BDW94C respectively
1.Base 2.Collector 3.Emitter
1
TO-220
2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW93/A/B/C
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW=300
s, duty Cycle =1.5% Pulsed
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
I
C
= 100mA, I
B
= 0
45
60
80
100
V
V
V
V
I
CBO
Collector Cut-off Current
: BDW93
: BDW93A
: BDW93B
: BDW93C
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
100
100
100
100
A
A
A
A
I
CEO
Collector Cut-off Current
: BDW93
: BDW93A
: BDW93B
: BDW93C
V
CE
= 45V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 80V, I
B
= 0
V
CE
= 100V, I
B
= 0
1
1
1
1
mA
mA
mA
mA
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
2
mA
h
FE
* DC Current Gain
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 5A
V
CE
= 3V, I
C
= 10A
1000
750
100
20000
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 5A, I
B
= 20mA
I
C
= 10A, I
B
= 100mA
2
3
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= 5A, I
B
= 20mA
I
C
= 10A, I
B
= 100mA
2.5
4
V
V
V
F
* Parallel Diode Forward Voltage
I
F
= 5A
I
F
= 10A
1.3
1.8
2
4
V
V
2000 Fairchild Semiconductor International
BDW93/A/B/C
Rev. A, February 2000
Typical characteristics
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area
Figure 6. Power Derating
0.1
1
10
100
100
1k
10k
100k
V
CE
= 3V
h
FE
, DC
CUR
RENT
G
A
IN
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
0.1
1
10
I
C
= 250 I
B
V
CE
(
s
a
t
)
[V],
SAT
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.0
0.8
1.6
2.4
3.2
4.0
0
4
8
12
16
20
V
CE
= 3 V
I
C
[
A
], C
O
L
L
ECT
O
R CU
RREN
T
V
BE
[V], BASE-EMITTER VOLTAGE
1
10
100
10
100
1000
f=1MHz
I
E
=0
C
ob
[p
F
]
,
O
U
T
P
U
T
C
APAC
T
I
AN
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
1
10
100
1000
0.1
1
10
100
100 us
1 ms
5 ms
DC
I
C
MAX.
BDW93B
BDW93C
BDW93
BDW93A
I
C
[
A
]
,
CO
L
L
E
C
T
O
R CUR
RENT
V
CE
[V], COLLECTOR EMITTER VOLTAGE
0
25
50
75
100
125
150
175
200
0
20
40
60
80
100
P
D
[W
]
,
PO
W
E
R
D
I
SSIPAT
IO
N
T
C
[
o
C], CASE TEMPERATURE
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW93/A/B/C
Dimensions in Millimeters
2000 Fairchild Semiconductor International
Rev. E
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Advance Information
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Design
This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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