2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW94/A/B/C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BDW94
: BDW94A
: BDW94B
: BDW94C
- 45
- 60
- 80
- 100
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BDW94
: BDW94A
: BDW94B
: BDW94C
- 45
- 60
- 80
- 100
V
V
V
V
I
C
Collector Current (DC)
- 12
A
I
CP
*Collector Current (Pulse)
- 15
A
I
B
Base Current
- 0.2
A
P
C
Collector Dissipation (T
C
=25
C)
80
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
BDW94/A/B/C
Power Linear and Switching Applications
Power Darlington TR
Complement to BDW93, BDW93A, BDW93B and BDW93C respectively
1.Base 2.Collector 3.Emitter
1
TO-220
2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW94/A/B/C
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW=300
s, duty Cycle =1.5% Pulsed
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
: BDW94
: BDW94A
: BDW94B
: BDW94C
I
C
= - 100mA, I
B
= 0
- 45
- 60
- 80
- 100
V
V
V
V
I
CBO
Collector Cut-off Current
: BDW94
: BDW94A
: BDW94B
: BDW94C
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
- 100
- 100
- 100
- 100
A
A
A
A
I
CEO
Collector Cut-off Current
: BDW94
: BDW94A
: BDW94B
: BDW94C
V
CE
= - 45V, I
B
= 0
V
CE
= - 60V, I
B
= 0
V
CE
= - 80V, I
B
= 0
V
CE
= - 100V, I
B
= 0
-1
- 1
- 1
- 1
mA
mA
mA
mA
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 2
mA
h
FE
* DC Current Gain
V
CE
= - 3V, I
C
= -3A
V
CE
= - 3V, I
C
= - 5A
V
CE
= - 3V, I
C
= - 10A
1000
750
100
20000
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 5A, I
B
= - 20mA
I
C
= - 10A, I
B
= - 100mA
- 2
- 3
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= - 5A, I
B
= - 20mA
I
C
= - 10A, I
B
= - 100mA
- 2.5
- 4
V
V
V
F
* Parallel Diode Forward Voltage
I
F
= - 5A
I
F
= -1 0A
- 1.3
- 1.8
- 2
- 4
V
V
2000 Fairchild Semiconductor International
BDW94/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage
Figure 4. Output Capacitance
Figure 5. Safe Operating Area
Figure 6. Power Derating
-0.1
-1
-10
-100
100
1k
10k
100k
V
CE
= -3V
h
FE
, D
C
CU
RREN
T
G
A
IN
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
-100
-0.1
-1
-10
I
C
= 250 I
B
V
CE
(
s
a
t
)
[V],
SAT
U
R
AT
IO
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
-0.0
-0.8
-1.6
-2.4
-3.2
-4.0
-0
-4
-8
-12
-16
-20
V
CE
= -3V
I
C
[
A
], C
O
L
L
E
C
T
O
R CU
RRE
N
T
V
BE
[V], BASE-EMITTER VOLTAGE
-1
-10
-100
10
100
1000
f=1MHz
I
E
=0
C
ob
[p
F
], C
APAC
T
I
AN
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
-1
-10
-100
-1000
-0.1
-1
-10
-100
BDW94C
BDW94B
BDW94A
BDW94
DC
I
C
MAX.
5 ms 1 ms
100uS
I
C
[
A
]
,
CO
L
L
E
CT
O
R
CURR
E
N
T
V
CE
[V], COLLECTOR EMITTER VOLTAGE
0
50
100
150
200
250
0
20
40
60
80
100
120
P
D
[
W
]
,
PO
W
E
R
DI
SSI
PAT
I
O
N
Tc [
o
C], CASE TEMPERATURE
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW94/A/B/C
Dimensions in Millimeters
2000 Fairchild Semiconductor International
Rev. E
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