April 1995
BS270
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_____________
___________________________________________________________________
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
BS270
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1M
)
60
V
V
GSS
Gate-Source Voltage - Continuous
20
V
- Non Repetitive (tp < 50s)
40
I
D
Drain Current - Continuous
400
mA
- Pulsed
2000
P
D
Maximum Power Dissipation
625
mW
Derate Above 25C
5
mW/C
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
T
L
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistacne, Junction-to-Ambient
200
C/W
BS270.SAM
400mA, 60V. R
DS(ON)
= 2
@ V
GS
= 10V.
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 500mA DC. These products are
particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers,
and other switching applications.
S
D
G
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 10 A
60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 60 V, V
GS
= 0 V
1
A
T
J
= 125
o
C
500
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
10
nA
I
GSSF
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-10
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
2.1
2.5
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 500 mA
1.2
2
T
J
= 125
o
C
2
3.5
V
GS
= 4.5 V, I
D
= 75 mA
1.8
3
V
DS(ON)
Drain-Source On-Voltage
V
GS
= 10 V, I
D
= 500 mA
0.6
1
V
V
GS
= 4.5 V, I
D
= 75 mA
0.14
0.225
I
D(ON)
On-State Drain Current
V
GS
= 10 V, V
DS
> 2 V
DS(on)
2000
2700
mA
V
GS
= 4.5 V, V
DS
> 2 V
DS(on)
400
600
g
FS
Forward Transconductance
V
DS
> 2 V
DS(on)
, I
D
= 200 mA
100
320
mS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
20
50
pF
C
oss
Output Capacitance
11
25
pF
C
rss
Reverse Transfer Capacitance
4
5
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
on
Turn-On Time
V
DD
= 30 V, I
D
= 500 m A,
V
GS
= 10 V, R
GEN
= 25
10
ns
t
off
Turn-Off Time
10
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
400
mA
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
2000
mA
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 400 mA
(Note 1)
0.88
1.2
V
Note:
1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
BS270.SAM
BS270.SAM
0
1
2
3
4
5
0
0.5
1
1.5
2
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
9.0
4.0
8.0
3.0
7.0
V = 10V
GS
DS
D
5.0
6.0
-50
-25
0
25
50
75
100
125
150
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 5 0 0 m A
D
-50
-25
0
25
50
75
100
125
150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 1 mA
D
V = V
DS
GS
V , NORMALIZED
th
0
0.4
0.8
1.2
1.6
2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V =4.0V
GS
D
R , NORMALIZED
DS(on)
7.0
4.5
10
5.0
6 .0
9.0
8.0
0
0.4
0.8
1.2
1.6
2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
-55C
D
V = 10V
GS
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation with
Temperature
.
0
2
4
6
8
1 0
0
0.4
0.8
1.2
1.6
2
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55C
J
25C
125C
BS270.SAM
-50
-25
0
25
50
75
100
125
150
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
J
BV , NORMALIZED
DSS
I = 10A
D
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001
0.005
0.01
0.05
0.1
0.5
1
2
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125C
J
SD
S
25C
-55C
0
0.4
0.8
1.2
1.6
2
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I =500mA
D
V = 25V
DS
1
2
3
5
1 0
2 0
30
50
1
2
5
10
20
40
60
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
t
on
t
off
t
d(off)
t
f
t
r
t
d(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation
with Temperature.
Figure 8. Body Diode Forward Voltage Variation with
Current and Temperature.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics
.
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms
.
Typical Electrical Characteristics
(continued)
BS270.SAM
1
2
5
10
20
30
60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
V = 10V
SINGLE PULSE
T = 25C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
100us
10s
Figure 14. Transient Thermal Response Curve.
Figure 13. Maximum Safe Operating
Area.
Typical Electrical Characteristics
(continued)
0.0001
0.001
0.01
0.1
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R = (See Datasheet)
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
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