2000 Fairchild Semiconductor International
Rev. A, February 2000
BU806/
807
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulsed: pulsed duration = 300
s, duty cycle = 1.5%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BU806
: BU807
400
330
V
V
V
CEO
Collector-Emitter Voltage
: BU806
: BU807
200
150
V
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current (DC)
8
A
I
CP
*Collector Current (Pulse)
15
A
I
B
Base Current
2
A
P
C
Collector Dissipation (T
C
=25
C)
60
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~150
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BU806
: BU807
I
C
= 100mA, I
B
= 0
200
150
V
V
I
CES
Collector Cut-off Current
: BU806
: BU807
V
CE
= 400V, V
BE
= 0
V
CE
= 330V, V
BE
= 0
100
100
A
A
I
CEV
Collector Cut-off Current
: BU806
: BU807
V
CE
= 400V, V
BE
= -6V
V
CE
= 330V, V
BE
= -6V
100
100
A
A
I
EBO
Emitter Cut-off Current
V
BE
= 6V, I
C
= 0
3
mA
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 5A, I
B
= 50mA
1.5
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= 5A, I
B
= 50mA
2.4
V
V
F
* Damper Diode Forward Voltage
I
F
= 4A
2
V
BU806/807
High Voltage & Fast Switching Darlington
Transistor
Using In Horizontal Output Stages of 110
Crt Video Displays
BUILT-IN SPEED-UP Diode Between Base and Emitter
1.Base 2.Collector 3.Emitter
1
TO-220
2000 Fairchild Semiconductor International
BU806/
807
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 3. Damper Diode
Figure 4. Safe Operating Area
Figure 5. Power Derating
0.1
1
10
10
100
1000
V
CE
= 1.5V
V
CE
= 5V
h
FE
, DC C
URRENT
GAI
N
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
0.1
1
10
Ic = 100 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
),
V
CE
(
s
a
t
)
[
V], SA
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.1
1
10
0.1
1
10
V
f
[V
], F
O
RW
A
RD
V
O
LT
A
G
E
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
10us
100us
BU806
50
0us
10
m
s
1ms
BU807
DC
I
C
MAX. (Pulse)
I
C
MAX. (DC)
I
C
[A
], C
O
L
L
E
C
T
O
R
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
50
100
150
200
0
10
20
30
40
50
60
70
80
P
C
[W
], P
O
W
E
R
D
I
S
S
I
P
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
2000 Fairchild Semiconductor International
Rev. E
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