DF005S - DF10S
DF005S-DF10S, Rev. A
DF005S - DF10S
1.5 Ampere Bridge Rectifiers
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Electrical Characteristics
T
A
= 25C unless otherwise noted
1998 Fairchild Semiconductor Corporation
Features
Surge overload rating: 50 amperes
peak.
Glass passivated junction.
Low leakage.
Parameter
Device
Units
005S
01S
02S
04S
06S
08S
10S
Peak Repetitive Reverse Voltage
50
100
200
400
600
800
1000
V
Maximum RMS Bridge Input Voltage
35
70
140
280
420
560
700
V
DC Reverse Voltage
(Rated V
R
)
50
100
200
400
600
800
1000
V
Maximum Reverse Leakage,
total bridge @ rated V
R
T
A
= 25
C
T
A
= 125
C
5.0
500
A
A
Maximum Forward Voltage Drop,
per bridge
@ 1.0 A
1.1
V
I
2
t rating for fusing
t < 8.35 ms
10
A
2
Sec
Typical Junction Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
25
pF
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
@ T
A
= 40
C
1.5
A
i
f(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
50
A
P
D
Total Device Dissipation
Derate above 25
C
3.1
25
W
mW/
C
R
JA
Thermal Resistance, Junction to Ambient,** per leg
40
C/W
T
stg
Storage Temperature Range
-55 to +150
C
T
J
Operating Junction Temperature
-55 to +150
C
SDIP
0.060 (1.524)
0.040 (1.016)
+
0.135 (3.429)*
0.115 (2.921)*
0.008 (0.203)
0.004 (0.102)
0.410 (10.414)
0.360 ( 9.144)
0.310 (7.874)
0.290 (7.366)
0.009 (0.229)
Typical
0.205 (5.207)
0.195 (4.953)
0.042 (1.067)
0.038 (0.965)
0.255 (6.477)
0.245 (6.223)
0.335 (8.509)
0.320 (8.128)
LOW PROFILE ALSO AVAILABLE
BODY - - 0.102 (2.591)*
0.095 (2.413)*
Dimensions are in:
inches (mm)
Discrete POWER & Signal
Technologies
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2
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