EGP10A-EGP10K
EPG10A - EPG10K, Rev. A
EGP10A - EGP10K
1.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
.375 " lead length @ T
L
= 55
C
1.0
A
i
f(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
30
A
P
D
Total Device Dissipation
Derate above 25
C
2.5
17
W
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
50
C/W
T
stg
Storage Temperature Range
-65 to +150
C
T
J
Operating Junction Temperature
-65 to +150
C
1999 Fairchild Semiconductor Corporation
Features
Superfast recovery time for high
efficiency.
Low forward voltage, high current
capability.
Low leakage current.
High surge current capability.
Parameter
Device
Units
10A
10B
10C
10D
10F
10G
10J
10K
Peak Repetitive Reverse Voltage
50
100
150
200
300
400
600
800
V
Maximum RMS Voltage
35
70
105
140
210
280
420
560
V
DC Reverse Voltage (Rated V
R
)
50
100
150
200
300
400
600
800
V
Maximum Reverse Current
@ rated V
R
T
A
= 25
C
T
A
= 125
C
5.0
100
A
A
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
50
75
nS
Maximum Forward Voltage @ 1.0 A
0.95
1.25
1.7
V
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
22
15
pF
DO-41
COLOR BAND DENOTES CATHODE
1.0 min
(25.4)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
0.205 (5.21)
0.160 (4.06)
Dimensions in
inches (mm)
Discrete POWER & Signal
Technologies
EGP10A-EGP10K
EPG10A - EPG10K, Rev. A
Typical Characteristics
P u l s e
G e n e r a t o r
(Note 2)
50
N O N I N D U C T I V E
50
N O N I N D U C T I V E
D U T
(-)
(+)
O S C I L L O S C O P E
(Note 1)
50
N O N I N D U C T I V E
5 0 V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
Non-Repetitive Surge Current
1
2
5
10
20
50
100
0
5
10
15
20
25
30
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
AR
D
SU
R
G
E
C
U
R
R
E
N
T
(
A
)
Forward Characteristics
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.01
0.1
1
10
50
FORWARD VOLTAGE (V)
FOR
W
AR
D
CU
R
R
ENT
(
A
)
Pulse Width = 300
s
2% Duty Cycle
T = 25 C
A
EGP10A-EGP10D
EGP10F-EGP10K
T = 150 C
A
Reverse Characteristics
0
20
40
60
80
100
120
140
0.01
0.1
1
10
100
1000
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
R
EVER
SE
C
U
RR
EN
T (
A
)
T = 25 C
A
T = 100 C
A
T = 125 C
A
Junction Capacitance
0.1
1
10
100
1000
0
10
20
30
40
50
60
REVERSE VOLTAGE (V)
CA
P
A
C
I
T
A
N
C
E
(
pF)
EGP10F-EGP10K
EGP10A-EGP10D
Forward Current Derating Curve
25
50
75
100
125
150
175
0
0.25
0.5
0.75
1
LEAD TEMPERATURE ( C)
F
O
R
W
AR
D CU
RR
E
N
T
(
A
)
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
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