2003 Fairchild Semiconductor Corporation
April 2003
FDB3632 / FDP3632 / FDI3632 Rev. B1
FD
B
3
6
32
/ F
D
P
363
2 /
FD
I36
3
2
FDB3632 / FDP3632 / FDI3632
N-Channel PowerTrench
MOSFET
100V, 80A, 9m
Features
r
DS(ON)
= 7.5m
(Typ.), V
GS
= 10V, I
D
= 80A
Q
g
(tot) = 84nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82784
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
MOSFET Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
100
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current
80
A
Continuous (T
C
< 111
o
C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
JA
= 43
o
C/W)
12
A
Pulsed
Figure 4
A
E
AS
Single Pulse Avalanche Energy (Note 1)
393
mJ
P
D
Power dissipation
310
W
Derate above 25
o
C
2.07
W/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
R
JC
Thermal Resistance Junction to Case TO-220, TO-263, TO-262
0.48
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
62
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
43
o
C/W
S
G
D
TO-263AB
FDB SERIES
TO-220AB
FDP SERIES
DRAIN
DRAIN
GATE
GATE
SOURCE
SOURCE
(FLANGE)
DRAIN
(FLANGE)
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
TO-262AB
FDI SERIES
2003 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 Rev. B1
FD
B
3
6
32
/ F
D
P
363
2 /
FD
I36
3
2
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting T
J
= 25C, L = 0.12mH, I
AS
= 75A.
2: Pulse Width = 100s
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB3632
FDB3632
TO-263AB
330mm
24mm
800 units
FDP3632
FDP3632
TO-220AB
Tube
N/A
50 units
FDI3632
FDI3632
TO-262AA
Tube
N/A
50 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
100
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 80V
-
-
1
A
V
GS
= 0V
T
C
= 150
o
C
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
=
20V
-
-
100
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
2
-
4
V
r
DS(ON)
Drain to Source On Resistance
I
D
=80A, V
GS
=10V
-
0.0075
0.009
I
D
=40A, V
GS
= 6V,
-
0.009
0.015
I
D
=80A, V
GS
=10V, T
C
=175
o
C
-
0.018
0.022
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
6000
-
pF
C
OSS
Output Capacitance
-
820
-
pF
C
RSS
Reverse Transfer Capacitance
-
200
-
pF
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V
V
DD
= 50V
I
D
= 80A
I
g
= 1.0mA
-
84
110
nC
Q
g(TH)
Threshold Gate Charge
V
GS
= 0V to 2V
-
11
14
nC
Q
gs
Gate to Source Gate Charge
-
30
-
nC
Q
gs2
Gate Charge Threshold to Plateau
-
20
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
20
-
nC
t
ON
Turn-On Time
V
DD
= 50V, I
D
= 80A
V
GS
= 10V, R
GS
= 3.6
-
-
102
ns
t
d(ON)
Turn-On Delay Time
-
30
-
ns
t
r
Rise Time
-
39
-
ns
t
d(OFF)
Turn-Off Delay Time
-
96
-
ns
t
f
Fall Time
-
46
-
ns
t
OFF
Turn-Off Time
-
-
213
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 80A
-
-
1.25
V
I
SD
= 40A
-
-
1.0
V
t
rr
Reverse Recovery Time
I
SD
= 75A, dI
SD
/dt= 100A/
s
-
-
64
ns
Q
RR
Reverse Recovered Charge
I
SD
= 75A, dI
SD
/dt= 100A/
s
-
-
120
nC
2003 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 Rev. B1
FD
B
3
6
32
/ F
D
P
363
2 /
FD
I36
3
2
Typical Characteristics
T
A
= 25C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
PO
WE
R
D
I
SSI
P
A
T
I
O
N
M
U
L
T
I
P
L
I
ER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
25
50
75
100
125
25
50
75
100
125
150
175
I
D
, DRAIN CURRE
NT
(
A
)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
CURRENT LIMITED
BY PACKAGE
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
2
t , RECTANGULAR PULSE DURATION (s)
Z
JC
, NO
RM
AL
IZ
E
D
T
H
E
R
M
A
L
IM
P
E
D
ANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
1000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
50
2000
I
DM
, P
E
AK CURRE
NT
(
A
)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
2003 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 Rev. B1
FD
B
3
6
32
/ F
D
P
363
2 /
FD
I36
3
2
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
A
= 25C unless otherwise noted
0.1
1
10
100
1
10
100
200
400
I
D
, DRAIN CURR
E
N
T
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
s
10ms
1ms
DC
100
s
10
100
0.1
1
10
200
0.01
I
AS
,
A
V
AL
A
NCHE
CURRE
NT
(
A
)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
30
60
90
120
150
3.0
3.5
4.0
4.5
5.0
5.5
6.0
I
D
, DRAIN CUR
RE
NT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
30
60
90
120
150
0
1
2
3
4
I
D
, DRAIN CURRE
NT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5.5V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 6V
6
7
8
9
10
0
20
40
62
80
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
DRA
I
N
T
O
S
O
URCE
O
N
RE
S
I
S
T
ANC
E
(
m
)
V
GS
= 6V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
NO
RM
AL
IZ
E
D
DRAIN T
O
S
O
URCE
T
J
, JUNCTION TEMPERATURE (
o
C)
O
N
RE
S
I
S
T
ANC
E
V
GS
= 10V, I
D
=80A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
2003 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 Rev. B1
FD
B
3
6
32
/ F
D
P
363
2 /
FD
I36
3
2
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
Typical Characteristics
T
A
= 25C unless otherwise noted
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
200
NO
RM
AL
IZ
E
D
G
A
T
E
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
T
HRE
S
H
O
L
D V
O
L
T
A
G
E
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
NO
RM
AL
IZ
E
D
DRAIN T
O
S
O
URCE
I
D
= 250
A
BRE
AKDO
W
N
V
O
L
T
A
G
E
100
1000
10000
0.1
1
10
100
C, CAP
A
C
IT
ANCE
(
p
F
)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
0
20
40
60
80
100
V
GS
, G
A
T
E
T
O
S
O
URCE
V
O
L
T
A
G
E
(
V
)
Q
g
, GATE CHARGE (nC)
V
DD
= 50V
I
D
= 80A
I
D
= 40A
WAVEFORMS IN
DESCENDING ORDER:
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