June 1999

FDC638P
P-Channel 2.5V Specified PowerTrench

MOSFET

General Description

Features

Absolute Maximum Ratings

= 25°C unless otherwise note

Symbol Parameter

Ratings

Units

DSS

Drain-Source Voltage

-20

GSS

Gate-Source Voltage - Continuous

±8

Drain Current - Continuous

(Note 1a)

-4.5

- Pulsed

-20

Maximum Power Dissipation

(Note 1a)

1.6

(Note 1b)

0.8

STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1a)

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

°C/W

FDC638P Rev.D

This P -Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.

These devices are well suited for battery power applications: load
switching and power management, battery charging circuits, and
DC/DC conversion.

-4.5 A, -20 V. R

DS(ON)

= 0.045

@ V

= -4.5 V

DS(ON)

= 0.065

@ V

= -2.5 V.

Low gate charge (13nC typical).

High performance trench technology for extremely low R

DS(ON)

SuperSOT

-6 package: small footprint (72% smaller than standard

SO-8); low profile (1mm thick).

SOIC-16

SOT-23

SuperSOT

-8

SO-8

SOT-223

SuperSOT

-6

SuperSOT -6

.638

pin

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

DSS

Drain-Source Breakdown Voltage

= 0 V, I

= -250 µA

-20

DSS

Breakdown Voltage Temp. Coefficient

= -250 µA, Referenced to 25

-18

mV/

DSS

Zero Gate Voltage Drain Current

= -16 V, V

= 0 V

-1

µA

= 55

-10

µA

GSSF

Gate - Body Leakage, Forward

= 8 V, V

= 0 V

100

GSSR

Gate - Body Leakage, Reverse

= -8 V, V

= 0 V

-100

ON CHARACTERISTICS

(Note 2)

GS(th)

Gate Threshold Voltage

= V

, I

= -250 µA

-0.4

-0.9

-1.5

GS(th)

Gate Threshold VoltageTemp.Coefficient

= -250 µA, Referenced to 25

mV/

DS(ON)

Static Drain-Source On-Resistance

= -4.5 V, I

= -4.5 A

0.039

0.045

= 125

0.054

0.072

= -2.5 V, I

= -3.8 A

0.057

0.065

D(on)

On-State Drain Current

= -4.5 V, V

= -5 V

-20

Forward Transconductance

= -10 V, I

= -4.5 A

6.5

DYNAMIC CHARACTERISTICS

iss

Input Capacitance

= -10 V, V

= 0 V,

1240

oss

Output Capacitance

f = 1.0 MHz

270

rss

Reverse Transfer Capacitance

100

SWITCHING CHARACTERISTICS

(Note 2)

D(on)

Turn - On Delay Time

= -5 V, I

= -1 A,

Turn - On Rise Time

= -4.5 V, R

GEN

= 6

D(off)

Turn - Off Delay Time

Turn - Off Fall Time

Total Gate Charge

= -10 V, I

= -4.5 A,

Gate-Source Charge

= -5 V

1.8

Gate-Drain Charge

DRAIN-SOURCE DIODE CHARACTERISTICS

Continuous Source Diode Current

-1.3

Drain-Source Diode Forward Voltage

= 0 V, I

= -1.3 A

(Note 2)

-0.75

-1.2

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

guaranteed by design while R

is determined by the user's board design.

a. 78

C/W when mounted on a 1 in

pad of 2oz Cu on FR-4 board.

b. 156

C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDC638P Rev.D

FDC638P Rev.B

-V , DRAIN-SOURCE VOLTAGE (V)

- I , DRAIN-SOURCE CURRENT (A)

V = -4.5V

- 2.5V

- 2.0V

-3.0V

0.8

1.2

1.4

1.6

- I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = -2.5V

R , NORMALIZED

DS(ON)

-4.5V

-3.0V

-4.0V

-3.5V

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance Variation

with Temperature.

Figure 5.Transfer Characteristics.

0.2

0.4

0.6

0.8

1.2

1.4

0.001

0.01

0.1

-V , BODY DIODE FORWARD VOLTAGE (V)

- I , REVERSE DRAIN CURRENT (A)

25°C

-55°C

V = 0V

T = 125°C

Figure 4. On Resistance Variation with

Gate-to-Source Voltage.

-50

-25

100

125

150

0.6

0.8

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

V = -4.5V

I = -4.5A

R , NORMALIZED

DS(ON)

0.03

0.06

0.09

0.12

0.15

- V , GATE TO SOURCE VOLTAGE (V)

R , ON-RESISTANCE (OHM)

DS(ON)

T = 125°C

25°C

I = -2.0A

0.8

1.6

2.4

3.2

-V , GATE TO SOURCE VOLTAGE (V)

- I , DRAIN CURRENT (A)

V = -5V

T = -55°C

125°C

25°C

Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.

FDC638P Rev.B

Figure 10. Single Pulse Maximum Power

Dissipation.

0.1

0.3

100

200

400

1000

2500

-V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

iss

f = 1 MHz
V = 0 V

oss

rss

Figure 8. Capacitance Characteristics

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical Characteristics

Q , GATE CHARGE (nC)

-V , GATE-SOURCE VOLTAGE (V)

V = -5V

D S

-10V

I = -4.5A

-15V

0.1

0.2

0.5

0.01

0.05

0.3

- V , DRAIN-SOURCE VOLTAGE (V)

- I , DRAIN CURRENT (A)

RDS(ON) LIMIT

100ms

10ms

1ms

V = -4.5V

SINGLE PULSE
R =156 °C/W

T = 25°C

100us

0.01

0.1

100

300

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =156°C/W

T = 25°C

0.00001

0.0001

0.001

0.01

0.1

100

300

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

1 2

R (t) = r(t) * R

R = 156°C/W

T - T = P * R (t)

P(pk)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

TRADEMARKS

ACExTM
CoolFETTM
CROSSVOLTTM
E

CMOS

FACTTM
FACT Quiet SeriesTM
FAST

FASTrTM
GTOTM
HiSeCTM

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

ISOPLANARTM
MICROWIRETM
POPTM
PowerTrenchTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
TinyLogicTM

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Formative or
In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

UHCTM
VCXTM

1998 Fairchild Semiconductor Corporation

Embo ssed

Carrier Tape

SSOT-6 Packaging
Configuration: Figur e 1.0

Comp onent s

Lead er Tape
500mm mi nimum or
125 emp ty poc kets

Traile r Tape
300mm mi nimum or
75 empty poc kets

SSOT-6 Tape Leader and Trailer
Configuration: Figur e 2.0

Cover Tape

Carrier Tape

Note/Comments

No marking

requir ed

Packaging Option

SSOT-6 Packaging Information

Standard

(no

f l ow c ode )

L99Z

D87Z

Packaging type

Reel Size

TNR

7" Dia

TNR

7" Dia

TNR

13"

Qty per Reel/Tube/Bag

3,000

10,000

Box Dimension (mm)

184x187x47

343x343x64

Max qty per Box

9,000

30,000

Weight per unit (gm)

0.0158

Weight per Reel (kg)

0.1440

0.4700

F63TNR
Label

Customize Lab el

Anti static Cover Tape

184mm x 187mm x 47mm

Pizza Box fo r Standar d Opti on

F63TNR
Label

F63TNR Labe l

F63TNR Labe l sa mpl e

343mm x 342mm x 64mm

Intermediate bo x fo r D87Z Option

F63TNR
Label

SSOT-6 Unit Orientation

631

Pin 1

LOT: CBVK741B019

FSID: FDC633N

D/C1: D9842 QTY1:

SPEC REV:

SPEC:

QTY: 3000

D/C2:

QTY2:

CPN:

N/F: F (F63TNR)3

Packaging Description:

SSOT-6 parts are shipped in tape. The carrier tape is
made from a di ssipat ive (carbo n filled) po ly carbon ate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film ,
adhesive layer, sealant, and anti-static sprayed

These reeled parts in standard option are shipped w ith
3,000 units per 7" or 177cm di ameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm di ameter reel. This and s ome ot her option s are
described in the Packaging Info rmation table.

These full reels are in di vidu ally barcod e labeled and
pl aced in side a pi zza box (illustrated in figure 1.0) made of
recyclable corr

ugated br own paper with a Fairchild logo

pr inting.. One p izza bo x cont ains three reels maximum.
And t hese pi zza boxes are pl aced inside a barcode
labeled shipping box whic h comes in d if ferent sizes
depend ing on the number of par ts shipped.

agent.

SuperSOT

-6 Tape and Reel Data and Package Dimensions

July 1999, Rev. C

Dimensions are in inches and millimeters

Tape Size

Reel

Option

Dim A

Dim B

Dim C

Dim D

Dim N

Dim W1

Dim W2

Dim W3 (LSL-USL)

8mm

7" Dia

7.00
177.8

0.059
1.5

512 +0.020/-0.008
13 +0.5/-0.2

0.795
20.2

2.165
55

0.331 +0.059/-0.000
8.4 +1.5/0

0.567
14.4

0.311 0.429
7.9 10.9

8mm

13" Dia

13.00
330

0.059
1.5

512 +0.020/-0.008
13 +0.5/-0.2

0.795
20.2

4.00
100

0.331 +0.059/-0.000
8.4 +1.5/0

0.567
14.4

0.311 0.429
7.9 10.9

See detail AA

Dim A

max

13" Diameter Option

7" Diameter Option

Dim A

Max

See detail AA

W2 max Measured at Hub

W1 Measured at Hub

Dim N

Dim D

min

Dim C

B Min

DETAIL AA

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum component rotation

0.5mm
maximum

Sketch C (Top View)

Component lateral movement

Typical
component
cavity
center line

20 deg maximum

Typical
component
center line

Sketch B (Top View)

Component Rotation

Sketch A (Side or Front Sectional View)

Component Rotation

User Direction of Feed

SSOT-6 Embossed Carrier Tape
Configuration: Figure 3.0

SSOT-6 Reel Configuration: Figure 4.0

Dimensions are in millimeter

Pkg type

SSOT-6

(8mm)

3.23
+/-0.10

3.18
+/-0.10

8.0
+/-0.3

1.55
+/-0.05

1.125
+/-0.125

1.75
+/-0.10

6.25
min

3.50
+/-0.05

4.0
+/-0.1

1.37
+/-0.10

0.255
+/-0.150

5.2
+/-0.3

0.06
+/-0.02

SuperSOT

-6 Tape and Reel Data and Package Dimensions, continued

July 1999, Rev. C

TRADEMARKS

ACExTM
CoolFETTM
CROSSVOLTTM
E

CMOS

FACTTM
FACT Quiet SeriesTM
FAST

FASTrTM
GTOTM
HiSeCTM

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

ISOPLANARTM
MICROWIRETM
POPTM
PowerTrenchTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
TinyLogicTM

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Formative or
In Design

First Production

Full Production

Not In Production

DISCLAIMER

UHCTM
VCXTM

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: FDC638P

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: FDC638P