www.docs.chipfind.ru
January 2004
2004 Fairchild Semiconductor Corporation
FDC699P Rev C2 (W)
FDC699P
P-Channel 2.5V PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V 12V).
Applications
Battery
management
Load
Switch
Battery
protection
Features
7 A, 20 V
R
DS(ON)
= 22 m
@ V
GS
= 4.5 V
R
DS(ON)
= 30 m
@ V
GS
= 2.5 V
High performance trench technology for extremely
low R
DS(ON)
Fast switching speed
FLMP SuperSOT-6 package: Enhanced thermal
performance in industry-standard package size
SuperSOT-6
TM
FLMP
S
S
S
G
S
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source
Voltage
12
V
I
D
Drain Current Continuous
(Note 1a)
7 A
Pulsed
40
P
D
Power Dissipation
(Note 1a)
2
(Note 1b)
1.5
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
60
C/W
(Note 1b)
111
R
JC
Thermal Resistance, Junction-to-Case
0.5
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.699
FDC699P
7''
8mm
3000 units
FDC699P
3
2
1
4
5
6
Bottom Drain
FDC699P Rev C2 (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V,
I
D
= 250
A
20 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
12 mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
1
A
I
GSS
GateBody
Leakage
V
GS
=
12 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
0.6 0.9 1.5 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25C
3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 4.5 V, I
D
= 7 A
V
GS
= 2.5 V, I
D
= 6 A
V
GS
= 4.5 V, I
D
= 7 A, T
J
=125
C
14
21
17
22
30
31
m
g
FS
Forward
Transconductance V
DS
= 5 V,
I
D
= 7 A
30
S
Dynamic Characteristics
C
iss
Input
Capacitance
2640
pF
C
oss
Output
Capacitance
560
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
280 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
3.6
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
16
28
ns
t
r
TurnOn Rise Time
11
19
ns
t
d(off)
TurnOff Delay Time
75
120
ns
t
f
TurnOff
Fall
Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
41 65 ns
Q
g
Total Gate Charge
27
38
nC
Q
gs
GateSource
Charge
5
nC
Q
gd
GateDrain
Charge
V
DS
= 10 V, I
D
= 7 A,
V
GS
= 5 V
7 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
1.6
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 1.6 A
(Note 2)
0.7
1.2
V
t
rr
Reverse
Recovery
Time
28
ns
Q
rr
Reverse Recovery Charge
I
F
= 7 A,
d
iF
/d
t
= 100 A/s
14 nC
Notes: 1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 60C/W
when
mounted on a 1in
2
pad
of 2 oz copper
b) 111C/W
when
mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDC699P
FDC699P Rev C2 (W)
Dimensional Outline and Pad Layout
Bottom View
Top View
Recommended Landing Pattern
FDC699P
FDC699P Rev C2 (W)
Typical Characteristics
0
10
20
30
40
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
-2.5V
V
GS
= -4.5V
-2.0V
-3.0V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
10
20
30
40
-I
D
, DRAIN CURRENT (A)
R
DS(O
N)
,
NORMALI
Z
ED
DRAI
N-
SOURCE ON-
R
ESI
STANCE
V
GS
= -2.0V
-3.5V
-4.5V
-4.0V
-3.0V
-2.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N)
,
NORM
ALI
Z
E
D
DRAI
N
-S
OURCE
ON-RE
S
I
S
T
ANCE
I
D
= -7A
V
GS
= -4.5V
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, ON-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= -3.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
0.5
1
1.5
2
2.5
3
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT
(A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC699P
FDC699P Rev C2 (W)
Typical Characteristics
0
1
2
3
4
5
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -7A
V
DS
= -5V
-15V
-10V
0
500
1000
1500
2000
2500
3000
3500
4000
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACI
TANCE (
pF)
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
C
ISS
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT
(A)
DC
10s
100ms
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
JA
= 111
o
C/W
T
A
= 25
o
C
10ms
1ms
1s
100s
10s
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(
pk)
,
PEAK TRANSI
E
NT POWER (
W
)
SINGLE PULSE
R
JA
= 111C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 111 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC699P
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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