2002 Fairchild Semiconductor Corporation
June 2002
FDD3672 Rev. A
FD
D
3
6
7
2
FDD3672
N-Channel UltraFET
Trench MOSFET
100V, 44A, 28m
Features
r
DS(ON)
= 24m
(Typ.), V
GS
= 10V, I
D
= 44A
Q
g
(tot) = 24nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Qrr Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82760
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection System
42V Automotive Load Control
Electronic Valve Train System
MOSFET Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
100
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current
44
A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
31
A
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
JA
= 52
o
C/W)
6.5
A
Pulsed
Figure 4
A
E
AS
Single Pulse Avalanche Energy (Note 1)
120
mJ
P
D
Power dissipation
135
W
Derate above 25
o
C
0.9
W/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
R
JC
Thermal Resistance Junction to Case TO-252
1.11
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-252
100
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
52
o
C/W
S
G
D
TO-252AB
FDD SERIES
GATE
SOURCE
(FLANGE)
DRAIN
2002 Fairchild Semiconductor Corporation
FDD3672 Rev. A
FD
D
3
6
7
2
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting T
J
= 25C, L = 0.6mH, I
AS
= 20A.
2: Pulse Width = 100s
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD3672
FDD3672
TO-252AA
330mm
16mm
2500 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
100
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 80V
-
-
1
A
V
GS
= 0V
T
C
= 150
o
C
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
=
20V
-
-
100
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
2
-
4
V
r
DS(ON)
Drain to Source On Resistance
I
D
= 44A, V
GS
= 10V
-
0.024
0.028
I
D
= 21A, V
GS
= 6V,
-
0.031
0.047
I
D
=44A, V
GS
=10V, T
C
=175
o
C
-
0.054
0.068
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
1710
-
pF
C
OSS
Output Capacitance
-
247
-
pF
C
RSS
Reverse Transfer Capacitance
-
62
-
pF
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V
V
DD
= 50V
I
D
= 44A
I
g
= 1.0mA
-
24
36
nC
Q
g(TH)
Threshold Gate Charge
V
GS
= 0V to 2V
-
3
4.5
nC
Q
gs
Gate to Source Gate Charge
-
8.6
-
nC
Q
gs2
Gate Charge Threshold to Plateau
-
5.6
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
5.6
-
nC
t
ON
Turn-On Time
V
DD
= 50V, I
D
= 44A
V
GS
= 10V, R
GS
= 11.0
-
-
104
ns
t
d(ON)
Turn-On Delay Time
-
11
-
ns
t
r
Rise Time
-
59
-
ns
t
d(OFF)
Turn-Off Delay Time
-
26
-
ns
t
f
Fall Time
-
44
-
ns
t
OFF
Turn-Off Time
-
-
104
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 44A
-
-
1.25
V
I
SD
= 21A
-
-
1.0
V
t
rr
Reverse Recovery Time
I
SD
= 44A, dI
SD
/dt =100A/
s
-
-
52
ns
Q
RR
Reverse Recovery Charge
I
SD
= 44A, dI
SD
/dt =100A/
s
-
-
80
nC
2002 Fairchild Semiconductor Corporation
FDD3672 Rev. A
FD
D
3
6
7
2
Typical Characteristics
T
C
= 25C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
PO
WE
R
D
I
SSI
P
A
T
I
O
N
M
U
L
T
I
P
L
I
ER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
10
20
30
40
50
25
50
75
100
125
150
175
I
D
, DRAIN CURRE
NT
(
A
)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
0.01
0.1
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
2
10
-5
t, RECTANGULAR PULSE DURATION (s)
Z
JC
, NO
RM
AL
IZ
E
D
T
H
E
R
M
A
L
IM
P
E
D
ANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
500
30
I
DM
, P
E
AK CURRE
NT
(
A
)
t , PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
2002 Fairchild Semiconductor Corporation
FDD3672 Rev. A
FD
D
3
6
7
2
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
Figure 6. Transfer Characteristics
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Drain
Current
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristics
T
C
= 25C unless otherwise noted
1
10
100
0.001
0.01
0.1
1
300
10
I
AS
, A
V
AL
ANCHE
CURRE
NT
(
A
)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
20
40
60
80
3.5
4.0
4.5
5.0
5.5
6.0
6.5
I
D
, DRAIN CURRE
NT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
20
40
60
80
0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
, DRAIN CURRE
NT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 7V
V
GS
= 10V
15
20
25
30
35
40
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
V
GS
= 10V
DRAIN T
O
S
O
URCE
O
N
RE
S
I
S
T
ANCE
(
m
)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
NO
RM
AL
IZ
E
D
DRAIN T
O
S
O
URCE
T
J
, JUNCTION TEMPERATURE (
o
C)
O
N
RE
S
I
S
T
ANCE
V
GS
= 10V, I
D
= 44A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
NO
RM
AL
IZ
E
D
G
A
T
E
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
T
HRE
S
H
O
L
D V
O
L
T
A
G
E
2002 Fairchild Semiconductor Corporation
FDD3672 Rev. A
FD
D
3
6
7
2
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 12. Capacitance vs Drain to Source
Voltage
Figure 13. Gate Charge Waveforms for Constant Gate Currents
Typical Characteristics
T
C
= 25C unless otherwise noted
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
O
RM
AL
IZ
E
D
DRAIN T
O
S
O
URCE
I
D
= 250
A
BRE
AKDO
W
N
V
O
L
T
A
G
E
10
100
1000
0.1
1
10
100
3000
C, CAP
A
C
IT
ANCE
(
p
F
)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
0
5
10
15
20
25
V
GS
, G
A
T
E
T
O
S
O
URCE
V
O
L
T
A
G
E
(
V
)
Q
g
, GATE CHARGE (nC)
V
DD
= 50V
I
D
= 44A
I
D
= 21A
WAVEFORMS IN
DESCENDING ORDER:
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