www.docs.chipfind.ru
FDD5690
FDD5690, Rev. B
FDD5690
60V N-Channel PowerTrench
TM
MOSFET
June 1999
PRELIMINARY
1999 Fairchild Semiconductor Corporation
G
S
D
TO-252
S
D
G
Features
30 A, 60 V. R
DS(ON)
= 0.027
@ V
GS
= 10 V
R
DS(ON)
= 0.032
@ V
GS
= 6 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Absolute Maximum Ratings
T
C
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
60
V
V
GSS
Gate-Source Voltage
20
V
I
D
Maximum Drain Current -Continuous
(Note 1)
30
(Note 1a)
9
Maximum Drain Current -Pulsed
100
A
Maximum Power Dissipation @ T
C
= 25
o
C
(Note 1)
50
T
A
= 25
o
C
(Note 1a)
3.2
P
D
T
A
= 25
o
C
(Note 1b)
1.3
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to- Case
(Note 1)
2.5
C/W
R
JA
Thermal Resistance, Junction-to- Ambient
(Note 1a)
40
C/W
(Note 1b)
96
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD5690
FDD5690
13''
16mm
2500
FDD5690
FDD5690, Rev. B
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
W
DSS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 30 V, I
D
= 30 A
90
mJ
I
AR
Maximum Drain-Source Avalanche Current
30
A
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
60
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
57
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 48 V, V
GS
= 0 V
1
A
I
GSSF
Gate-Body Leakage Current,
Forward
V
GS
= 20V, V
DS
= 0 V
100
nA
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2
2.5
4
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A,Referenced to 25
C
-6
mV/
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 9 A
V
GS
= 10 V, I
D
= 9 A, T
J
= 125
C
V
GS
= 6 V, I
D
= 8 A
0.023
0.032
0.026
0.027
0.048
0.032
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
25
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 9 A
24
S
Dynamic Characteristics
C
iss
Input Capacitance
1110
pF
C
oss
Output Capacitance
150
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V
f = 1.0 MHz
75
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
10
18
ns
t
r
Turn-On Rise Time
9
18
ns
t
d(off)
Turn-Off Delay Time
24
39
ns
t
f
Turn-Off Fall Time
V
DD
= 30 V, I
D
= 1 A
V
GS
= 10 V, R
GEN
= 6
10
18
ns
Q
g
Total Gate Charge
23
32
nC
Q
gs
Gate-Source Charge
4
nC
Q
gd
Gate-Drain Charge
V
DS
= 30 V, I
D
= 9 A
V
GS
= 10 V,
6.8
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
2.3
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
0.75
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
a) R
JA
= 40oC/W when mounted
on a 1in2 pad of 2oz copper.
b) R
JA
= 96oC/W on a minimum
mounting pad.
FDD5690
FDD5690, Rev. B
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
0
10
20
30
40
50
60
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
S(O
N
)
,
N
O
RM
AL
IZ
E
D
D
R
A
I
N
-SOU
R
C
E
O
N
-R
ESI
ST
A
N
C
E
I
D
= 9A
V
GS
= 10V
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, D
R
A
I
N-
S
O
UR
CE
CU
RR
E
N
T (
A
)
V
GS
= 10V
4.0V
5.0V
4.5V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
R
DS
(O
N
)
,
NO
RM
A
L
I
Z
E
D
DR
AI
N-
S
O
U
RCE
O
N
-
R
E
S
I
S
TAN
C
E
V
GS
= 4.5V
5.0V
0
0.02
0.04
0.06
0.08
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N)
,
O
N
-
R
E
S
I
S
T
ANCE
(O
HM
)
I
D
= 15A
T
A
= 125
o
C
T
A
= 25
o
C
FDD5690
FDD5690, Rev. B
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.0001
0.001
0.01
0.1
1
10
100
300
0.0001
0.001
0.01
0.1
1
t , TIME (sec)
TR
AN
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
NCE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
(
t
)
, N
O
R
M
A
L
IZ
E
D
E
F
F
E
C
T
I
V
E
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R =
96C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
0
500
1000
1500
2000
2500
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
0
20
40
60
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
POWE
R
(
W
)
SINGLE PULSE
R
JA
= 96
o
C/W
T
A
= 25
o
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRAI
N CURRE
NT
(
A
)
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 96
o
C/W
T
A
= 25
o
C
DC
10S
1S
100ms
10ms
1ms
100
s
0
2
4
6
8
10
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
TE
-
S
O
U
RC
E
V
O
L
T
AG
E
(
V
)
I
D
= 9A
V
DS
= 10V
20V
30V
FDD6680
D-PAK (TO-252) Packaging
Configuration: Figure 1.0
Components
TO-252 (D-PAK) Tape Leader and
Trailer Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
D-PAK (TO-252) Packaging Information
Standard
(no flow code)
Packaging type
Reel Size
TNR
13" Dia
Qty per Reel/Tube/Bag
2,500
Box Dimension (mm)
359x359x57
Max qty per Box
5,000
Weight per unit (gm)
0.300
Weight per Reel(kg)
1.200
ESD Label
F63TNR Label
359mm x 359mm x 57mm
Standard Intermediate box
D-PAK (TO-252) Unit Orientation
FDD
6680
FZ9
93
5
F63TNR Label sample
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Antistatic Cover Tape
ESD Label
N
EL ECT RO ST AT IC
SEN SIT IVE DEVI CES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
3000
LOT: CBVK741B019
FSID: FDD6680
D/C1: Z9942 QTY1:
SPEC REV:
SPEC:
QTY: 2500
D/C2:
QTY2:
CPN:
CBVK741B019
N/F: F (F63TNR)3
Packaging Description:
TO-252 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). This and some other options are further
described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
FDD
6680
FZ9
93
5
FDD
6680
FZ9
93
5
FDD
6680
FZ9
93
5
Leader Tape
1680mm minimum or
210 empty pockets
Trailer Tape
640mm minimum or
80 empty pockets
PDF 
ZIP