October 2001
FDFS6N303
N-Channel MOSFET with Schottky Diode
General Description
Features
MOSFET Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDFS6N303
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current - Continuous
(Note 1a)
6
A
- Pulsed
30
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
Schottky Diode Maximum Ratings
T
A
= 25
o
C unless otherwise noted
V
RRM
Repetitive Peak Reverse Voltage
30
V
I
O
Average Forward Current
(Note 1a)
2
A
2001 Fairchild Semiconductor Corporation FDFS6N303 Rev. D1
6 A, 30 V. R
DS(ON)
= 0.035
@ V
GS
= 10 V.
R
DS(ON)
= 0.050
@ V
GS
= 4.5 V.
V
F
< 0.28 V @ 0.1 A
V
F
< 0.42 V @ 3 A
V
F
< 0.50 V @ 6 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
General purpose pinout for design flexibility.
Ideal for DC/DC converter applications.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
Fairchild Semiconductor's FETKEY technology incorporates
a high cell density MOSFET and low forward drop (0.35V)
Schottky diode into a single surface mount power package.
The MOSFET and Schottky diode are isolated inside the
package. The general purpose pinout has been chosen to
maximize flexibility and ease of use. FETKEY products are
particularly suited for switching applications such as DC/DC
buck, boost, synchronous, and non-synchronous converters
where the MOSFET is driven as low as 4.5V and fast
switching, high efficiency and small PCB footprint is
desirable.
A
C
S
A
SO-8
D
D
C
G
pin
1
FDFS
6N303
A
A
C
C
D
D
G
S
6
7
5
1
2
3
4
8
Electrical Characteristics
(T
A
= 25
o
C unless otherwise noted )
MOSFET ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
A
T
J
=125C
20
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.7
3
V
R
DS(ON)
Static Drain-Source On-Resistance V
GS
= 10 V, I
D
= 6 A 0.025 0.035
V
GS
= 4.5 V, I
D
= 4.8 A
0.043
0.05
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 6 A
12
S
I
D(ON)
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
15
A
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
350
pF
C
oss
Output Capacitance
f = 1.0 MHz
220
pF
C
rss
Reverse Transfer Capacitance
80
pF
Q
g
Total Gate Charge
V
DS
= 15 V, I
D
= 6 A, V
GS
= 10 V
12
17
nC
t
D(on)
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
7.5
15
ns
t
r
Turn - On Rise Time
12
25
ns
t
D(off)
Turn - Off Delay Time
13
25
ns
t
f
Turn - Off Fall Time
6
15
ns
MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.8
1.2
V
SCHOTTKY DIODE CHARACTERISTICS
B
V
Reverse Breakdown Voltage
I
R
= 1 mA
30
V
I
R
Reverse Leakage
V
R
= 30 V
0.5
mA
V
F
Forward Voltage
I
F
= 0.1 A
280
mV
I
F
= 3 A
420
I
F
= 6 A 500
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is
guaranteed by design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDFS6N303 Rev. D1
c. 135
O
C/W on a 0.003 in
2
pad of 2oz copper.
b. 125
O
C/W on a 0.02 in
2
pad of 2oz copper.
a. 78
O
C/W on a 0.5 in
2
pad of 2oz copper.
FDFS6N303 Rev. D1
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation with
Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 10V
GS
3.5V
3.0V
4.5V
4.0V
5.0V
DS
D
6.0V
0
5
10
15
20
25
30
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 4.0V
GS
10V
5.0V
4.5V
D
6.0V
7.0V
R
, NORMALIZED
DS(ON)
2
4
6
8
10
0
0.025
0.05
0.075
0.1
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
25C
I = 3A
D
T = 125C
A
1
2
3
4
5
6
7
0
5
10
15
20
25
30
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
GS
25C
125C
V = 5V
DS
D
T = -55C
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
30
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125C
A
25C
-55C
V = 0V
GS
SD
S
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
GS
I = 6A
D
R , NORMALIZED
DS(ON)
FDFS6N303 Rev. D1
Typical Fet And Schottky Electrical Characteristics
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
0
2
4
6
8
10
12
14
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 6.0A
D
V = 5V
DS
10V
15V
0.1
0.3
1
3
10
30
50
100
200
500
1000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
f = 1 MHz
V = 0V
GS
C
oss
C
iss
C
rss
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R =135 C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
Figure 10. Schottky Diode Reverse Current.
Figure 9. Schottky Diode Forward Voltage.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
1
10
V , FORWARD VOLTAGE (V)
I , FORWARD CURRENT (A)
25C
F
F
T = 125C
J
0
5
10
15
20
25
30
0.00001
0.0001
0.001
0.01
0.1
1
V , REVERSE VOLTAGE (V)
I , REVERSE CURRENT (A)
T = 125C
J
25C
R
R
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
Not In Production
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