January 2003
2003 Fairchild Semiconductor Corporation
FDG6318P Rev C (W)
FDG6318P
Dual P-Channel, Digital FET
General Description
These dual P-Channel logic level enhancement mode
MOSFET are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for bipolar digital
transistors and small signal MOSFETS.
Applications
Battery management
Features
0.5 A, 20 V.
R
DS(ON)
= 780 m
@ V
GS
= 4.5 V
R
DS(ON)
= 1200 m
@ V
GS
= 2.5 V
Very low level gate drive requirements allowing direct
operation in 3V circuits (V
GS(th)
< 1.5V).
Compact industry standard SC70-6 surface mount
package
S
G
D
D
G
S
Pin 1
SC70-6
S
G
D
D
G
S
6 or 3
5 or 2
4 or 1
1 or 4
2 or 5
3 or 6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source
Voltage
12
V
I
D
Drain Current Continuous
(Note 1)
0.5 A
Pulsed
1.8
P
D
Power Dissipation for Single Operation
(Note 1)
0.3 W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.38
FDG6318P
7''
8mm
3000 units
FD
G6318P
FDG6318P Rev C (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown
Voltage
V
GS
= 0 V,
I
D
= 250
A
20 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
10 mV/
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V, V
GS
= 0 V
1
A
I
GSS
GateBody
Leakage
V
GS
=
12 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
0.65 1.2 1.5
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
2
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 4.5 V, I
D
= 0.5 A
V
GS
= 2.5 V, I
D
= 0.4 A
V
GS
= 4.5 V, I
D
= 0.5 A, T
J
=125C
580
980
780
780
1200
m
I
D(on)
OnState Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
1.8
A
g
FS
Forward
Transconductance
V
DS
= 5 V, I
D
= 0.5 A
1.1
S
Dynamic Characteristics
C
iss
Input
Capacitance
83
pF
C
oss
Output
Capacitance
20
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
11 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
12.1
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
6
12
ns
t
r
TurnOn Rise Time
12
22
ns
t
d(off)
TurnOff
Delay
Time
6
13
ns
t
f
TurnOff Fall Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
1 3 ns
Q
g
Total Gate Charge
0.86
1.2
nC
Q
gs
GateSource
Charge
0.22
nC
Q
gd
GateDrain
Charge
V
DS
= 10 V, I
D
= 0.6 A,
V
GS
= 4.5 V
0.25 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
0.25
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 0.25 A
(Note 2)
0.83
1.2
V
t
rr
Reverse Recovery Time
12.6 ns
Q
rr
Reverse Recovery Charge
I
F
= 0.5 A,
d
iF
/d
t
= 100 A/s
2.52 nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
JA
is determined by the user's board design. R
JA
= 415C/W when mounted on a minimum pad .
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FD
G6318P
FDG6318P Rev C (W)
Typical Characteristics
0
0.6
1.2
1.8
0
0.5
1
1.5
2
2.5
3
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
,
D
RAI
N CUR
RE
N
T
(A)
-3.5V
-4.5V
V
GS
= -10.0V
-3.0V
-6.0V
-2.5V
-2.0V
0.75
1
1.25
1.5
1.75
0
0.4
0.8
1.2
1.6
-I
D
, DRAIN CURRENT (A)
R
DS
(
O
N
)
, NO
RM
ALI
Z
E
D
DRAI
N-
S
O
UR
CE
O
N
-
R
E
S
I
S
T
A
NCE
V
GS
= -3.5V
-5.0V
-10.0V
-4.5V
-4.0V
-6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N)
,
NO
R
M
ALI
Z
E
D
DRAI
N-
S
O
U
RCE
O
N
-RE
S
I
S
T
ANCE
I
D
= -0.5A
V
GS
= -4.5V
0.2
0.6
1
1.4
1.8
0
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N
)
,
O
N
-RE
S
I
S
T
ANCE
(O
HM
)
I
D
= -0.25A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.6
1.2
1.8
0.5
1
1.5
2
2.5
3
3.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
,
D
RAI
N CUR
RE
N
T
(A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-I
S
,
RE
V
E
RS
E
DRAI
N C
URRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FD
G6318P
FDG6318P Rev C (W)
Typical Characteristics
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
Q
g
, GATE CHARGE (nC)
-V
GS
,
G
A
T
E
-
S
O
U
RCE
V
O
L
T
AG
E
(V
)
I
D
= -0.5A
V
DS
= -5V
-15V
-10V
0
40
80
120
0
4
8
12
16
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
TAN
C
E
(
pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
,
DRA
I
N
CURRE
NT
(A)
DC
1s
100ms
10ms
1ms
100
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
JA
= 415
o
C/W
T
A
= 25
o
C
0
6
12
18
24
30
0.0001
0.001
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
PO
W
E
R
(
W
)
SINGLE PULSE
R
JA
= 415
o
C/W
T
A
= 25
o
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
r(
t
)
,
NO
RM
A
L
IZ
E
D
E
F
F
E
CT
IV
E
T
R
A
N
S
I
EN
T
T
H
ER
MA
L
R
E
SI
S
T
A
N
C
E
R
JA
(t) = r(t) * R
JA
R
JA
= 415 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FD
G6318P
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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