FDS6685
FDS6685 Rev. B
FDS6685
P-Channel Logic Level PowerTrench
TM
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
Battery protection
Load switch
Motor drives
March 1999
PRELIMINARY
Features
-8.8 A, -30 V. R
DS(ON)
= 0.020
@ V
GS
= -10 V
R
DS(ON)
= 0.035
@ V
GS
= -4.5 V
Extended V
GSS
range (
25V) for battery applications.
Low gate charge (19nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage
25
V
I
D
Drain Current
- Continuous
(Note 1a)
-8.8
A
- Pulsed
-50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS6685
FDS6685
13''
12mm
2500 units
5
6
8
3
1
7
4
2
S
D
S
S
SO-8
D
D
D
G
FDS6685
FDS6685 Rev. B
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250
A
-30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
A,Referenced to 25
C
-24
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -24 V, V
GS
= 0 V
-1
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 25 V, V
DS
= 0 V
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -25 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250
A
-1
-2
-3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= -250
A,Referenced to 25
C
5
mV/
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -10 V, I
D
= -8.8 A
V
GS
= -10 V, I
D
= -8.8 A,T
J
=125
C
V
GS
= -4.5 V, I
D
= -6.7 A
0.015
0.023
0.026
0.020
0.032
0.035
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -5 V
-25
A
g
FS
Forward Transconductance
V
DS
= -10 V, I
D
= -8.8 A
20
S
Dynamic Characteristics
C
iss
Input Capacitance
1680
pF
C
oss
Output Capacitance
545
pF
C
rss
Reverse Transfer Capacitance
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
220
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
12
22
ns
t
r
Turn-On Rise Time
15
27
ns
t
d(off)
Turn-Off Delay Time
55
90
ns
t
f
Turn-Off Fall Time
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
23
37
ns
Q
g
Total Gate Charge
19
27
nC
Q
gs
Gate-Source Charge
6.8
nC
Q
gd
Gate-Drain Charge
V
DS
= -10 V, I
D
= -8.8 A,
V
GS
= -5 V,
7.2
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
-2.1
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
-0.52
-1.2
V
Notes:
1: R
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
JC
is guaranteed by design while R
JA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
a) 50
C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105
C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125
C/W on a minimum
mounting pad of 2 oz. copper.
FDS6685
FDS6685 Rev. B
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
NO
RM
AL
I
Z
E
D
DR
AI
N-
S
O
URCE
O
N
-RE
S
I
S
TA
NCE
I
D
= -8.8A
V
GS
= -10V
0
10
20
30
40
50
1
2
3
4
5
6
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
,
DRAI
N C
URRE
NT
(
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
10
20
30
40
50
-I
D
, DIRAIN CURRENT (A)
R
DS
(
O
N)
,
NO
RM
AL
I
Z
E
D
DRA
IN
-
S
O
URCE
O
N
-
R
E
S
I
S
T
A
N
C
E
V
GS
= -4.0V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
-4.5V
0
0.01
0.02
0.03
0.04
0.05
0.06
3
4
5
6
7
8
9
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
,
O
N
-RE
S
I
S
TA
NCE
(O
HM)
I
D
= -4.4A
T
A
= 125
o
C
T
A
= 25
o
C
0
10
20
30
40
50
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
,
D
R
A
I
N
CUR
RE
N
T
(A
)
-6.0V
-5.0V
-4.5V
-4.0V
-3.5V
-7.0V
V
GS
= -10V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
, RE
V
E
RS
E
DRAIN CURRE
NT (
A
)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
FDS6685
FDS6685 Rev. B
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics
Figure 8. Capacitance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TI M E (s e c )
T
R
AN
SI
EN
T
T
H
E
R M
A
L
RE
S
I
S
T
A
N
C
E
r
(
t
)
,
N
O
R
M
AL
I
Z
ED
EF
F
E
C
T
I
V
E
1
S i n g l e P u l s e
D = 0.5
0.1
0 .0 5
0 .0 2
0.0 1
0.2
D u t y C y c l e, D = t /t
1
2
R (t) = r(t) * R
R = 125C / W
J A
J A
J A
T - T = P * R ( t)
JA
A
J
P(p k )
t
1
t
2
0
500
1000
1500
2000
2500
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
TA
NCE
(pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
0
2
4
6
8
10
0
5
10
15
20
25
30
35
Q
g
, GATE CHARGE (nC)
-V
GS
,
GA
T
E
-SO
U
R
C
E VOL
T
A
G
E
(V)
I
D
= -8.8A
V
DS
= -5V
-10V
-15V
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
,
DRA
I
N
CURRE
NT (A)
DC
10s
1s
100ms
10ms
1ms
100
s
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
PO
W
E
R
(
W
)
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
SOIC(8lds) Packaging
Configuration: Figure 1.0
Components
Leader Tape
1680mm minimum or
210 empty pockets
Trailer Tape
640mm minimum or
80 empty pockets
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOIC (8lds) Packaging Information
Standard
(no flow code)
L86Z
F011
Packaging type
Reel Size
TNR
13" Dia
Rail/Tube
-
TNR
13" Dia
Qty per Reel/Tube/Bag
2,500
95
4,000
Box Dimension (mm)
343x64x343
530x130x83
343x64x343
Max qty per Box
5,000
30,000
8,000
D84Z
TNR
7" Dia
500
184x187x47
1,000
Weight per unit (gm)
0.0774
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
0.9696
0.1182
F63TN Label
ESD Label
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
LOT: CBVK741B019
FSID: FDS9953A
D/C1: D9842 QTY1:
SPEC REV:
SPEC:
QTY: 2500
D/C2:
QTY2:
CPN:
N/F: F (F63TNR)3
F852
NDS
9959
SOIC-8 Unit Orientation
F
85
2
NDS
99
59
Pin 1
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Antistatic Cover Tape
ESD Label
EL ECT RO ST AT IC
SEN SIT IVE DEVI CES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Customized
Label
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
F
85
2
NDS
99
59
F
85
2
NDS
99
59
F
85
2
NDS
99
59
SO-8 Tape and Reel Data and Package Dimensions
July 1999, Rev. B
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