September 2003
2003 Fairchild Semiconductor Corporation
FDS6692 Rev D (W)
FDS6692
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Applications
DC/DC converter
Features
12 A, 30 V.
R
DS(ON)
= 12 m
@ V
GS
= 10 V.
R
DS(ON)
= 14.5 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
Low gate charge (18 nC typical)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
16
V
I
D
Drain Current Continuous
(Note 1a)
12
A
Pulsed
50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +175
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6692
FDS6692
13''
12mm
2500 units
FDS6692
FDS6692 Rev D (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
26
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
A
I
GSSF
GateBody Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
100
nA
I
GSSR
GateBody Leakage, Reverse
V
GS
= 16 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
1
1.6
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
5
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 12 A
V
GS
= 4.5 V,
I
D
= 11 A
V
GS
= 10 V, I
D
= 12 A, T
J
= 125
C
9.5
11.5
14
12
14.5
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 5 V
50
A
g
FS
Forward Transconductance
V
DS
= 5 V,
I
D
= 12 A
50
S
Dynamic Characteristics
C
iss
Input Capacitance
2164
pF
C
oss
Output Capacitance
357
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
138
pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
9
18
ns
t
r
TurnOn Rise Time
5
10
ns
t
d(off)
TurnOff Delay Time
35
56
ns
t
f
TurnOff Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
10
20
ns
Q
g
Total Gate Charge
18
25
nC
Q
gs
GateSource Charge
5
nC
Q
gd
GateDrain Charge
V
DS
= 15 V, I
D
= 12 A,
V
GS
= 5 V
5
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
2.1
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
0.7
1.2
V
Notes:
1. R
JA
is the s um of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 50C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDS6692
FDS6692 Rev D (W)
Typical Characteristics
0
10
20
30
40
50
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.0V
4.5V
2.5V
3.5V
V
GS
= 10V
6.0V
0.75
1
1.25
1.5
1.75
2
2.25
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
3.5V
4.5V
6.0V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 12A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
0.03
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 6 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6692
FDS6692 Rev D (W)
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
30
35
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 12A
V
DS
= 10V
20V
15V
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
100s
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 125C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JA
(t) = r(t) + R
JA
R
JA
= 125 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6692
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