June 1998
FDS6912A
Dual N-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDS6912A
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current - Continuous
(Note 1a)
6
A
- Pulsed
20
P
D
Power Dissipation for Single Operation
(Note 1a)
2
W
(Note 1b)
1.6
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
FDS6912A Rev.C
6 A, 30 V. R
DS(ON)
= 0.028
@ V
GS
= 10 V
R
DS(ON)
= 0.035
@ V
GS
= 4.5 V.
Fast switching speed.
Low gate charge (typical 9 nC).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
FDS
6912A
pin
1
1
5
7
8
2
3
4
6
1998 Fairchild Semiconductor Corporation
Electrical Characteristics (
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
30
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
23
mV /
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
A
T
J
= 55C
10
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.5
3
V
V
GS(th)
/
T
J
Gate Threshold Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
-4
mV /
o
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 6 A
0.023
0.028
T
J
=125C
0.036
0.044
V
GS
= 4.5 V, I
D
= 5 A
0.029
0.035
I
D(ON)
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
20
A
g
FS
Forward Transconductance
V
DS
= 15 V, I
D
= 6 A
18
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
830
pF
C
oss
Output Capacitance
185
pF
C
rss
Reverse Transfer Capacitance
80
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DS
= 15 V, I
D
= 1 A
6
12
ns
t
r
Turn - On Rise Time
V
GS
= 10 V , R
GEN
=
6
10
18
ns
t
D(off)
Turn - Off Delay Time
18
29
ns
t
f
Turn - Off Fall Time
5
12
ns
Q
g
Total Gate Charge
V
DS
= 15 V, I
D
= 7.5 A,
9
13
nC
Q
gs
Gate-Source Charge
V
GS
= 5 V
2.8
nC
Q
gd
Gate-Drain Charge
3.1
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.73
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDS6912A Rev.C
c. 135
O
C/W on a 0.003 in
2
pad of 2oz copper.
b. 125
O
C/W on a 0.02 in
2
pad of 2oz copper.
a. 78
O
C/W on a 0.5 in
2
pad of 2oz copper.
FDS6912A Rev.C
0
1
2
3
4
0
8
16
24
32
40
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
DS
D
3.5V
3.0V
V =10V
GS
4.0V
5.5V
2.5V
4.5V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 6A
D
Figure 3. On-Resistance Variation with
Temperature.
T = -55C
J
1
2
3
4
5
0
5
10
15
20
25
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V =5.0V
DS
GS
D
125C
25C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
6
12
18
24
30
0
1
2
3
4
5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
V = 2.5V
GS
R , NORMALIZED
DS(ON)
10V
3.5 V
3.0 V
4.5 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001
0.01
0.1
1
20
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
25C
-55C
V = 0V
GS
SD
S
T = 125C
J
0
2
4
6
8
10
0
0.03
0.06
0.09
0.12
0.15
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
25C
I = 3A
D
T = 125C
A
FDS6912A Rev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R =135 C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
0.1
0.2
0.5
1
2
5
10
30
50
100
200
500
1500
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0 V
GS
C
oss
C rss
0.1
0.5
1
2
5
10
30
50
0.01
0.05
0.5
2
10
50
100
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
A
DC
DS
1s
100ms
10ms
1ms
10s
V =10V
SINGLE PULSE
R = 135C/W
T = 25C
JA
GS
A
100us
0.01
0.1
0.5
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =135 C/W
T = 25C
JA
A
0
3
6
9
12
15
18
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 6A
D
10V
15V
V = 5V
DS
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