www.docs.chipfind.ru
February 2004
2004 Fairchild Semiconductor Corporation
FDS7288N3 Rev C1 (W)
FDS7288N3
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET in the thermally enhanced
SO8 FLMP package has been designed specifically to
improve the overall efficiency of DC/DC converters.
Providing a balance of low R
DS(ON)
and Qg it is ideal for
synchronous rectifier applications in both isolated and
non-isolated topologies. It is also well suited for both
high and low side switch applications in Point of Load
converters.
Applications
Secondary side Synchronous rectifier
Synchronous Buck VRM and POL Converters
Features
20.5 A, 30 V R
DS(ON)
= 4.5 m
@ V
GS
= 10 V
R
DS(ON)
= 5.6 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
Low Qg and Rg for fast switching
SO-8 FLMP for enhanced thermal performance in an
industry-standard package outline.
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source
Voltage
20
V
I
D
Drain Current Continuous
(Note 1a)
20 A
Pulsed
60
P
D
Power Dissipation for Single Operation
(Note 1a)
3.0
(Note 1b)
1.5
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
0.5
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7288N3
FDS7288N3
13''
12mm
2500 units
FDS7288N3
FDS7288N3 Rev C1 (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V, I
D
= 250
A
30 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
25 mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
10
A
I
GSS
GateBody
Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
1 1.8 3 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25C
5 mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 20.5 A
V
GS
= 4.5 V, I
D
= 18.5 A
V
GS
= 10 V, I
D
= 20.5 A,T
J
= 125
C
3.8
4.6
5.2
4.5
5.6
7.6
m
g
FS
Forward
Transconductance V
DS
= 10 V, I
D
= 20.5 A
106
S
Dynamic Characteristics
C
iss
Input
Capacitance
3300
pF
C
oss
Output
Capacitance
845
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
230 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.6
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
12
22
ns
t
r
TurnOn Rise Time
11
20
ns
t
d(off)
TurnOff Delay Time
45
72
ns
t
f
TurnOff
Fall
Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
32 51 ns
Q
g
Total Gate Charge
V
DS
= 15 V, I
D
= 20.5 A, V
GS
=10 V
49 69 nC
Q
g
Total Gate Charge
26
36
nC
Q
gs
GateSource
Charge
8.8
nC
Q
gd
GateDrain
Charge
V
DS
= 15 V, I
D
= 20.5 A, V
GS
= 5 V
6.7 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
2.5
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.5 A
(Note 2)
0.70
1.2 V
t
rr
Diode Reverse Recovery Time
36
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 20.5 A,
d
iF
/d
t
= 100 A/s
25 nC
FDS7288N3
FDS7288N3 Rev C1 (W)
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 40C/W
when
mounted on a 1in
2
pad
of 2 oz copper
b)
85C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDS7288N3
FDS7288N3 Rev C1 (W)
Typical Characteristics
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CUR
RE
NT
(
A
)
3.5V
6.0V
V
GS
=10V
4.0V
3.0V
2.5V
4.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
R
DS
(O
N)
,
NO
RM
ALI
Z
ED
D
RAI
N-
SO
UR
CE O
N
-
R
ES
IS
TA
NCE
V
GS
= 3.0V
6.0V
4.0V
10V
4.5V
5.0V
3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N
)
,
NO
R
M
AL
I
Z
E
D
DR
AIN
-
SOU
R
C
E
ON-
R
ESISTAN
CE
I
D
= 20.5A
V
GS
= 10V
0.002
0.006
0.01
0.014
0.018
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(
O
N)
, ON-R
ES
IST
A
N
C
E
(OHM)
I
D
= 10.25A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DR
AIN CURRE
NT (A)
T
A
=125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
R
E
V
E
R
SE DRA
IN CU
RR
ENT (A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7288N3
FDS7288N3 Rev C1 (W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
60
Q
g
, GATE CHARGE (nC)
V
GS
,
G
A
TE
-S
O
URCE
VO
LT
AG
E (V
)
I
D
= 20.5A
V
DS
= 10V
20V
15V
0
1000
2000
3000
4000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CA
PAC
I
T
ANC
E (p
F)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRA
IN CU
RR
ENT (
A
)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 85
o
C/W
T
A
= 25
o
C
10ms
1ms
100s
10s
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk)
,
PEA
K TRA
N
SIEN
T
PO
W
E
R
(W)
SINGLE PULSE
R
JA
= 85C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,
NO
R
M
AL
I
Z
E
D
EF
F
E
CT
I
V
E
T
R
ANS
I
E
N
T
T
H
ERM
A
L R
E
S
I
STANC
E
R
JA
(t) = r(t) * R
JA
R
JA
= 85 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS7288N3
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