December 2005
2005 Fairchild Semiconductor Corporation
FDS8449 Rev B(W)
www.fairchildsemi.com
FDS8449
40V N-Channel PowerTrench
MOSFET
General Description
These N-Channel MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
Inverter
Power
Supplies
Features
7.6 A, 40V
R
DS(on)
= 29m
@ V
GS
= 10V
R
DS(on)
= 36m
@ V
GS
= 4.5V
High power handling capability in a widely used
surface mount package
RoHS
compliant
S
D
S
S
SO-8
D
D
D
G
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
40
V
V
GSS
Gate-Source
Voltage
20
V
I
D
Drain Current Continuous
(Note 1a)
7.6 A
Pulsed
50
Power Dissipation for Single Operation
(Note 1a)
2.5
P
D
(Note 1b)
1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
125
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8449
FDS8449
13''
12mm
2500 units
FD
S8
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OS
FET
FDS8449 Rev A(W)
www.fairchildsemi.com
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 3)
E
AS
Drain-Source Avalanche Energy
V
DD
= 40 V, I
D
= 7.3 A, L = 1 mH
27
mJ
I
AS
Drain-Source Avalanche Current
7.3
A
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V,
I
D
= 250
A
40 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
34
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 32 V,
V
GS
= 0 V
1
A
I
GSS
GateBody
Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
1 1.9 3 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
5
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 7.6 A
V
GS
= 4.5 V, I
D
= 6.8 A
V
GS
= 10 V, I
D
= 7.6 A, T
J
=125
C
21
26
29
29
36
43
m
g
FS
Forward
Transconductance V
DS
= 10 V,
I
D
= 7.6 A
21
S
Dynamic Characteristics
C
iss
Input
Capacitance
760
pF
C
oss
Output
Capacitance
100
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 20 V,
V
GS
= 0 V,
f = 1.0 MHz
60 pF
R
G
Gate Resistance
f = 1.0 MHz
1.2
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
9
18
ns
t
r
TurnOn Rise Time
5
10
ns
t
d(off)
TurnOff Delay Time
23
17
ns
t
f
TurnOff
Fall
Time
V
DD
= 20 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
3
6
ns
Q
g
Total Gate Charge
7.7
11
nC
Q
gs
GateSource
Charge
2.4
nC
Q
gd
GateDrain
Charge
V
DS
= 20 V,
I
D
= 7.6 A,
V
GS
= 5 V
2.8 nC
DrainSource Diode Characteristics
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.76
1.2
V
t
rr
Diode Reverse Recovery Time
17
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 7.6 A,
d
iF
/d
t
= 100 A/s
7 nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 50C/W when mounted
on a 1in
2
pad of 2 oz
copper
b) 125C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2 Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FD
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FET
FDS8449 Rev A(W)
www.fairchildsemi.com
Typical Characteristics
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, D
RAIN
CU
RRE
NT
(A
)
V
GS
= 10V
3.5V
4.0V
3.0V
4.5V
6.0V
0.6
1
1.4
1.8
2.2
2.6
3
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
DS
(O
N)
,
NO
RM
AL
I
Z
E
D
D
R
A
I
N
-
SO
UR
CE
ON
-R
ES
IS
TA
NC
E
V
GS
= 3.0V
6.0V
4.0V
10V
4.5V
3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N)
,
NO
R
M
ALI
Z
ED
DR
AI
N
-
SO
UR
CE
O
N
-RE
S
I
S
T
A
N
C
E
I
D
= 7.6A
V
GS
= 10V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
,
ON
-R
ESI
ST
ANCE
(
O
HM)
I
D
= 3.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DR
AI
N C
URR
ENT
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 10V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
,
R
EVER
SE DR
A
I
N
CU
R
R
EN
T (A
)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FD
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OS
FET
FDS8449 Rev A(W)
www.fairchildsemi.com
Typical Characteristics
0
2
4
6
8
10
0
4
8
12
16
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
T
E
-SO
U
R
C
E VO
L
T
AG
E (V)
I
D
= 7.6 A
V
DS
= 10V
30V
20V
0
200
400
600
800
1000
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
T
ANCE (
p
F
)
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, D
RAI
N CU
RRENT
(A)
DC
10s
1s
100ms
100
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(
p
k
),
PE
AK
T
R
A
N
SI
E
N
T
P
O
W
E
R
(W
)
SINGLE PULSE
R
JA
= 125C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
I(
p
k
),
PE
AK
TRA
N
S
I
E
N
T
CUR
RE
NT (
A
)
SINGLE PULSE
R
JA
= 125C/W
T
A
= 25C
1
10
100
0.01
0.1
1
10
t
AV
, TIME IN AVANCHE(ms)
I
(A
S
)
, AVAL
AN
CHE CU
RR
ENT (A)
T
J
= 25
o
C
Figure 11. Single Pulse Maximum Peak
Current.
Figure 12. Unclamped Inductive Switching
Capability.
FD
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OS
FET
FDS8449 Rev A(W)
www.fairchildsemi.com
Typical Characteristics
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,
NORMALI
Z
E
D
E
F
FE
CTI
V
E
TRANS
I
E
NT
THE
R
MAL
RE
S
I
S
T
ANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 125
o
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 25. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FD
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FET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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