November 1999
ADVANCE INFORMATION
1999 Fairchild Semiconductor Corporation
FDZ202P Rev. A (W)
FDZ202P
P-Channel 2.5V Specified PowerTrench
TM
BGA MOSFET
General Description
Combining Fairchild's advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ202P minimizes both PCB space
and R
DS(ON)
. This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Applications
=
Battery management
=
Load switch
=
Battery protection
Features
=
5.5 A, 20 V. R
DS(ON)
= 0.045
=
@ V
GS
= 4.5 V
R
DS(ON)
= 0.075
@ V
GS
= 2.5 V.
=
Occupies only 5 mm
2
of PCB area.
Only 55% of the area of SSOT-6
=
Ultra-thin package: less than 0.70 mm height when
mounted to PCB
=
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
=
Ultra-low Q
g
x R
DS(ON)
figure-of-merit.
=
High power and current handling capability.
Pin 1
G
S
S
S
D
D
D
S
S
D
D
D
Bottom
F202
Pin 1
Top
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source
Voltage
12
V
I
D
Drain Current Continuous
(Note 1a)
5.5 A
Pulsed
20
P
D
Power Dissipation (Steady State)
(Note 1a)
2.7 W
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +175
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
55
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
8
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
F202 FDZ202P
TBD
TBD
TBD
FDZ202P
FDZ202P Rev. A (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
20 V
BV
DSS
===
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to
25
C
28
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
1
A
I
GSSF
GateBody Leakage Current,
Forward
V
GS
= 12 V, V
DS
= 0 V
100
nA
I
GSSR
GateBody Leakage Current,
Reverse
V
GS
= 12 V
V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
0.4 0.9 1.5 V
R
DS(on)
Static
DrainSource
OnResistance
V
GS
= 4.5 V, I
D
= 5.5 A
V
GS
= 2.5 V, I
D
= 4.0 A
0.036
0.060
0.045
0.075
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
2.3
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
0.77
1.2 V
Notes:
1. R
JA
is the a function of the junction-to-case (R
JC
), case-to-ambient (R
CA
) and the PC Board (R
BA
) thermal resistance where the case thermal reference is
defined the top surface of the package. R
JC
is guaranteed by design while R
CA
and R
BA
are determined by the user's design.
(a).
R
JA
= 55
C/W (steady-state) when mounted on 1 in
2
of 2 oz. copper.
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDZ202P
FDZ202P Rev. A (W)
Dimensional Outline and Pad Layout
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) NO JEDEC REGISTRATION REFERENCE AS
OF JULY 1999.
D
C
B
A
3
1
2
3
B
A
1
D
C
2
0.51
SEATING PLANE
0.65
1.95
0.40
0.65
1.30
CL
SYMM
SYMM CL
0.65
1.30
1.95
0.65
TOP VIEW
SIDE VIEW
FRONT VIEW
BOTTOM VIEW
RECOMMENDED LAND
PATTERN
INDEX SLOT
(HIDDEN)
INDEX
SLOT
SOLDER BALL
0.30
GATE
L
C
L
C
CL
SOLDER BALL,
0.30
CL
D
a
t
e
/
v
en
dor
Code
F2
02
0.76
0.25
2.70
2.30
2.15
1.85
G
S
S
S
S
S
D
D
D
D
D
D
FDZ202P
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
SyncFETTM
TinyLogicTM
UHCTM
VCXTM
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrench
QFETTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
Rev. D
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