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2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
December 2004
FDZ293P Rev. C
FDZ293P P-Channel 2.5
V Specified P
o
werT
renc
h BGA MOSFET
FDZ293P
P-Channel 2.5 V Specified PowerTrench
BGA MOSFET
Features
I
4.6 A, 20 V
R
DS(ON)
= 46 m
@ V
GS
= 4.5 V
R
DS(ON)
= 72 m
@ V
GS
= 2.5 V
I
Occupies only 2.25 mm
2
of PCB area.
Less than 50% of the area of a SSOT-6
I
Ultra-thin package: less than 0.85 mm height when mounted
to PCB
I
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
I
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
I
High power and current handling capability.
Applications
I
Battery management
I
Load switch
I
Battery protection
General Description
Combining Fairchild's advanced 2.5V specified PowerTrench
process with state of the art BGA packaging, the FDZ293P min-
imizes both PCB space and R
DS(ON)
. This BGA MOSFET
embodies a breakthrough in packaging technology which
enables the device to combine excellent thermal transfer char-
acteristics, high current handling capability, ultra-low profile
packaging, low gate charge, and low R
DS(ON)
.
GATE
Bottom
Top
S
D
G
2
www.fairchildsemi.com
FDZ293P Rev. C
FDZ293P P-Channel 2.5
V Speci
fi
ed P
o
werT
renc
h
BGA MOSFET
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20 V
V
GSS
Gate-Source Voltage
12
V
I
D
Drain Current
Continuous
(Note 1a)
4.6
A
Pulsed
10
P
D
Power Dissipation for Single Operation
(Note 1a)
1.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
72
C/W
Device Marking
Device
Reel Size
Tape width
Quantity
B
FDZ293P
7"
8mm
3000 units
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0V, I
D
= 250
A
20
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
13
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16V, V
GS
= 0V
1
A
I
GSS
GateBody Leakage.
V
GS
=
12V, V
DS
= 0V
100
nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
0.6
0.8
1.5
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 4.5V, I
D
= 4.6A,
V
GS
= 2.5V, I
D
= 3.6A,
V
GS
= 4.5V, I
D
= 4.6A, T
J
= 125
C
36
58
47
46
72
65
m
I
D(on)
OnState Drain Current
V
GS
= 4.5V, V
DS
= 5V
10
A
g
FS
Forward Transconductance
V
DS
= 5V, I
D
= 4.6A
13
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
754
pF
C
oss
Output Capacitance
167
pF
C
rss
Reverse Transfer Capacitance
92
pF
R
G
Gate Resistance
V
GS
= 15mV, f = 1.0MHz
6
Switching Characteristics (Note 2)
t
d(on)
TurnOn Delay Time
V
DD
= 10V, I
D
= 1A,
V
GS
= 4.5V, R
GEN
= 6
11
20
ns
t
r
TurnOn Rise Time
10
20
ns
t
d(off)
TurnOff Delay Time
22
35
ns
t
f
TurnOff Fall Time
17
31
ns
Q
g
Total Gate Charge
V
DS
= 10V, I
D
= 4.6A,
V
GS
= 4.5V
7.5
11
nC
Q
gs
GateSource Charge
1.5
nC
Q
gd
GateDrain Charge
2.0
nC
3
www.fairchildsemi.com
FDZ293P Rev. C
FDZ293P P-Channel 2.5
V Speci
fi
ed P
o
werT
renc
h
BGA MOSFET
Notes:
1. R
JA
is determined with the device mounted on a 1 in
2
2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material.
The thermal resistance from the junction to the circuit board side of the solder ball, R
JB
, is defined for reference.
For R
JC
, the thermal reference point for the case is defined as the top surface of the copper chip carrier. R
JC
and
R
JB
are guaranteed by design while R
JA
is determined by the user's board design.
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
1.4
A
I
S
V
SD
DrainSource Diode Forward Voltage V
GS
= 0V, I
S
= 1.4A
(Note 2)
0.7
1.2
V
t
rr
Diode Reverse Recovery Time
I
F
= 4.6A,
d
iF
/d
t
= 100A/s
17
nS
Q
rr
Diode Reverse Recovery Charge
5
nC
a) 72C/W when
mounted on a
1in2 pad of 2 oz
copper, 1.5" x
1.5" x 0.062"
thick PCB
b) 157C/W when
mounted on a
minimum pad of 2 oz
copper
Electrical Characteristics
T
A
= 25C unless otherwise noted (Continued)
4
www.fairchildsemi.com
FDZ293P Rev. C
FDZ293P P-Channel 2.5
V Speci
fi
ed P
o
werT
renc
h
BGA MOSFET
Typical Characteristics
0
2
4
6
8
10
0
0.5
1
1.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
,
DRAI
N CURRE
NT (
A
)
-3.0V
-3.5V
-2.5V
-2.0V
V
GS
= -4.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
2
4
6
8
-I
D
, DRAIN CURRENT (A)
R
DS
(O
N)
,
NO
RMALI
Z
E
D
DRAI
N
-S
O
U
RCE
O
N
-RE
S
I
S
T
ANCE
V
GS
= -2.0V
-3.5V
-3.0V
-4.5V
-2.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
IS
TANC
E
I
D
= -4.6A
V
GS
= -4.5V
0.03
0.06
0.09
0.12
0.15
0.18
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N)
, O
N
-
R
E
S
IS
T
ANCE
(
O
HM
)
I
D
= -2.3 A
T
A
= 125
C
T
A
= 25
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
,
DRAI
N CURRE
NT (A)
T
A
= 125
C
25
C
-55
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, RE
V
E
R
S
E
DRAIN CURRE
NT (A)
T
A
= 125
C
25
-55
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
C
C
5
www.fairchildsemi.com
FDZ293P Rev. C
FDZ293P P-Channel 2.5
V Speci
fi
ed P
o
werT
renc
h
BGA MOSFET
Typical Characteristics
0
1
2
3
4
5
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
-V
GS
,
GA
T
E
-
S
OU
R
C
E
VOL
T
A
GE (
V
)
I
D
= -4.6A
V
DS
= -5V
-15V
-10V
0
200
400
600
800
1000
1200
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
A
CITANCE
(
p
F
)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
DC
100ms
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
JA
= 157
C/W
T
A
= 25
C
10ms
1ms
100
s
10s
1s
0
5
10
15
20
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(p
k
),
PEA
K
T
R
A
N
SI
EN
T
POW
E
R
(W
)
SINGLE PULSE
R
JA
= 157
C/W
T
A
= 25
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 157
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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