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FFB3904 / FMB3904 / MMPQ3904
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Discrete POWER & Signal
Technologies
1998 Fairchild Semiconductor Corporation
Thermal Characteristics
T
A
= 25C unless otherwise noted
Symbol
Characteristic
Max
Units
FFB3904
FMB3904
MMPQ3904
P
D
Total Device Dissipation
Derate above 25
C
300
2.4
700
5.6
1,000
8.0
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
415
180
125
240
C/W
C/W
C/W
FFB3904
SC70-6
Mark: .1A
C1
B2
E2
E1
B1
C2
pin #1
FMB3904
SuperSOT
TM
-6
Mark: .1A
C1
E1
C2
B1
E2
B2
pin #1
MMPQ3904
SOIC-16
C1
C1
C2
C2
C3
C3
C4
C4
E1
B1
E2
B2
E3
B3
E4
B4
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
6.0
V
I
BL
Base Cutoff Current
V
CE
= 30 V, V
EB
= 0
50
nA
I
CEX
Collector Cutoff Current
V
CE
= 30 V, V
EB
= 0
50
nA
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
450
MHz
C
obo
Output Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 1.0 MHz
2.5
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0,
f = 1.0 MHz
6.0
pF
NF
Noise Figure
(except MMPQ3904)
I
C
= 100
A, V
CE
= 5.0 V,
R
S
=1.0k
, f=10 Hz to 15.7 kHz
2.0
dB
t
d
Delay Time
V
CC
= 3.0 V, V
BE
= 0.5 V,
18
ns
t
r
Rise Time
I
C
= 10 mA, I
B1
= 1.0 mA
20
ns
t
s
Storage Time
V
CC
= 3.0 V, I
C
= 10mA
150
ns
t
f
Fall Time
I
B1
= I
B2
= 1.0 mA
25
ns
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
40
70
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.2
0.3
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.65
0.85
0.95
V
V
FFB3904 / FMB3904 / MMPQ3904
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EMI
T
T
E
R ON VOL
T
A
GE
(
V
)
BE
(
O
N)
C
V = 5V
CE
25 C
125 C
- 40 C
Typical Pulsed Current Gain
vs Collector Current
0.1
1
10
100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
Y
PI
CAL
P
U
L
SED
CURRE
N
T
G
A
I
N
FE
- 40 C
25 C
C
V = 5V
CE
125 C
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
ITT
E
R VOL
T
A
G
E
(
V
)
BESA
T
C
= 10
25 C
125 C
- 40 C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V
-
CO
LL
EC
T
O
R-
E
M
I
TTE
R
VO
L
T
A
G
E
(
V
)
CESA
T
25 C
C
= 10
125 C
- 40 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
LL
ECT
O
R C
URR
ENT
(
n
A
)
A
V
= 30V
CB
CB
O
Capacitance vs
Reverse Bias Voltage
0.1
1
10
100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CA
P
A
CIT
A
NCE (p
F
)
C obo
C ibo
f = 1.0 MHz
NPN Multi-Chip General Purpose Amplifier
(continued)
FFB3904 / FMB3904 / MMPQ3904
Typical Characteristics
(continued)
Noise Figure vs Frequency
0.1
1
10
100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
N
F
-
NOI
S
E FI
G
URE (
d
B)
V = 5.0V
CE
I = 100
A, R = 500
C
S
I = 1.0 mA
R = 200
C
S
I = 50
A
R = 1.0 k
C
S
I = 0.5 mA
R = 200
C
S
k
Noise Figure vs Source Resistance
0.1
1
10
100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
N
F
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
I = 100
A
C
I = 1.0 mA
C
S
I = 50
A
C
I = 5.0 mA
C
- D
E
G
R
EE
S
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1
10
100
1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h
-
CURRE
NT GA
I
N
(
d
B)
V = 40V
CE
I = 10 mA
C
h
fe
fe
Turn-On Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(n
S)
I = I =
B1
C
B2
I
c
10
40V
15V
2.0V
t
@
V = 0V
CB
d
t
@
V = 3.0V
CC
r
Rise Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
R
I
S
E
T
I
M
E
(n
s
)
I = I =
B1
C
B2
I
c
10
T = 125C
T = 25C
J
V = 40V
CC
r
J
NPN Multi-Chip General Purpose Amplifier
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - PO
WE
R D
I
SSIP
A
TIO
N
(W)
D
o
SOT-6
FFB3904 / FMB3904 / MMPQ3904
Typical Characteristics
(continued)
Storage Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
S
T
O
R
A
G
E
T
I
M
E
(ns
)
I = I =
B1
C
B2
I
c
10
S
T = 125C
T = 25C
J
J
Fall Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
F
A
L
L
T
I
M
E
(n
s
)
I = I =
B1
C
B2
I
c
10
V = 40V
CC
f
T = 125C
T = 25C
J
J
Test Circuits
10 K
3.0 V
275
t
1
C
1
<
<
<
<
<
4.0 pF
Duty Cycle
=
=
=
=
=
2%
Duty Cycle
=
=
=
=
=
2%
<
<
<
<
<
1.0 ns
- 0.5 V
300 ns
10.6 V
10
<
<
<
<
<
t
1
<
<
<
<
<
500
s
10.9 V
- 9.1 V
<
<
<
<
<
1.0 ns
0
0
10 K
3.0 V
275
C
1
<
<
<
<
<
4.0 pF
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
NPN Multi-Chip General Purpose Amplifier
(continued)
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