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FFB3906 / FMB3906 / MMPQ3906
C1
B2
E2
E1
B1
C2
pin #1
C1
E1
C2
B1
E2
B2
pin #1
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10
A to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
1998 Fairchild Semiconductor Corporation
Thermal Characteristics
T
A
= 25C unless otherwise noted
FFB3906
SC70-6
Mark: .2A
FMB3906
SuperSOT
-6
Mark: .2A
MMPQ3906
Symbol
Characteristic
Max
Units
FFB3904
FMB3904
MMPQ3904
P
D
Total Device Dissipation
Derate above 25
C
300
2.4
700
5.6
1,000
8.0
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
415
180
125
240
C/W
C/W
C/W
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SOIC-16
Mark: MMPQ3906
C1
C1
C2
C2
C3
C3
C4
C4
E1
B1
E2
B2
E3
B3
E4
B4
pin #1
FFB3906 / FMB3906 / MMPQ3906
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
BL
Base Cutoff Current
V
CE
= 30 V, V
BE
= 3.0 V
50
nA
I
CEX
Collector Cutoff Current
V
CE
= 30 V, V
BE
= 3.0 V
50
nA
h
FE
DC Current Gain *
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
60
80
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.25
0.4
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.65
0.85
0.95
V
V
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
450
MHz
C
obo
Output Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 100 kHz
3.0
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0,
f = 100 kHz
8.0
pF
NF
Noise Figure
(except MMPQ3906)
I
C
= 100
A, V
CE
= 5.0 V,
R
S
=1.0k
, f=10 Hz to 15.7 kHz
2.5
dB
t
d
Delay Time
V
CC
= 3.0 V, V
BE
= 0.5 V,
15
ns
t
r
Rise Time
I
C
= 10 mA, I
B1
= 1.0 mA
20
ns
t
s
Storage Time
V
CC
= 3.0 V, I
C
= 10mA
110
ns
t
f
Fall Time
I
B1
= I
B2
= 1.0 mA
40
ns
PNP Multi-Chip General Purpose Amplifier
(continued)
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
FFB3906 / FMB3906 / MMPQ3906
Typical Characteristics
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
0.1
1
10
0
2
4
6
8
10
REVERSE BIAS VOLTAGE (V)
CA
P
A
CI
T
A
NCE (
p
F
)
C obo
C ibo
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
0.1
0.2
0.5
1
2
5
10
20
50
100
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h
-
TYP
I
C
A
L
P
U
LS
ED
C
U
R
R
E
N
T
G
A
I
N
C
FE
125 C
25 C
- 40 C
V = 1.0V
CE
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
CO
LL
EC
T
O
R CU
R
R
E
N
T
(
n
A)
A
CB
O
V = 25V
CB
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
-
CO
LL
EC
TO
R EM
I
T
T
E
R VO
L
T
A
G
E
(
V
)
C
C
ESA
T
25 C
- 40 C
125 C
= 10
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE
EM
I
T
T
E
R
V
O
L
T
A
GE
(
V
)
C
BE
S
A
T
= 10
25 C
- 40 C
125 C
Base Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
E
M
I
T
T
E
R
O
N
V
O
L
T
A
GE
(
V
)
C
BE(
O
N
)
V = 1V
CE
25 C
- 40 C
125 C
FFB3906 / FMB3906 / MMPQ3906
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R
D
I
S
S
IP
A
T
IO
N
(
W
)
D
SOT-6
SOIC-16
SC70-6
Typical Characteristics
(continued)
PNP Multi-Chip General Purpose Amplifier
(continued)
Noise Figure vs Frequency
0.1
1
10
100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
NF
-
NO
I
S
E
F
I
GU
RE
(
d
B
)
I = 100
A, R = 200
C
V = 5.0V
CE
S
I = 100
A, R = 2.0 k
C
S
I = 1.0 mA, R = 200
C
S
Noise Figure vs Source Resistance
0.1
1
10
100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
k
I = 100
A
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
Switching Times
vs Collector Current
1
10
100
1
10
100
500
I - COLLECTOR CURRENT (mA)
T
I
ME
(n
S
)
I = I =
t r
t
s
B1
C
B2
I
c
10
t f
t d
Turn On and Turn Off Times
vs Collector Current
1
10
100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
S
)
I = I =
t
off
B1
C
B2
I
c
10
t
on
V = 0.5V
BE(OFF)
t
I =
on
t
off
B1
I
c
10
FFB3906 / FMB3906 / MMPQ3906
Typical Characteristics
(continued)
Voltage Feedback Ratio
0.1
1
10
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
V
O
L
T
AG
E
F
E
E
D
B
A
C
K
RAT
I
O
(
x
1
0
)
C
re
_
4
Input Impedance
0.1
1
10
0.1
1
10
I - COLLECTOR CURRENT (mA)
h
-
I
N
PU
T I
M
PED
ANC
E
(
k
)
V = 10 V
CE
C
ie
f = 1.0 kHz
Output Admittance
0.1
1
10
10
100
1000
I - COLLECTOR CURRENT (mA)
h
-
O
U
TPU
T
A
D
M
I
T
T
A
N
C
E
(
m
h
os
)
V = 10 V
CE
C
oe
f = 1.0 kHz
Current Gain
0.1
1
10
10
20
50
100
200
500
1000
I - COLLECTOR CURRENT (mA)
h
-
C
U
R
R
E
N
T G
A
I
N
V = 10 V
CE
C
fe
f = 1.0 kHz
PNP Multi-Chip General Purpose Amplifier
(continued)
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