2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.4
FPS
TM
is a trademark of Fairchild Semiconductor Corporation.
Features
Internal Avalanche Rugged Sense FET
Consumes only 0.65W at 240VAC & 0.3W load with
Advanced Burst-Mode Operation
Frequency Modulation for EMI Reduction
Precision Fixed Operating Frequency
Internal Start-up Circuit
Pulse-by-Pulse Current Limiting
Over Voltage Protection (OVP)
Over Load Protection (OLP)
Internal Thermal Shutdown Function (TSD)
Auto-Restart Mode
Under Voltage Lockout (UVLO)
Low Operating Current (3mA)
Adjustable Peak Current Limit
Built-in Soft Start
Applications
SMPS for VCR, SVR, STB, DVD & DVCD Player
SMPS for Printer, Facsimile & Scanner
Adapter for Camcorder
Related Application Notes
AN-4137, 4141, 4147(Flyback) / AN-4134(Forward)
Description
The FSDM0265RNB consists of an integrated Pulse Width
Modulator (PWM) and Sense FET, and is specifically
designed for high performance off-line Switch Mode Power
Supplies (SMPS) with minimal external components. This
devices is an integrated high voltage power switching regu-
lator which combines an avalanche rugged Sense FET with a
current mode PWM control block. The integrated PWM con-
troller features include: a fixed oscillator with frequency
modulation for reduced EMI, Under Voltage Lock Out
(UVLO) protection, Leading Edge Blanking (LEB), an opti-
mized gate turn-on/turn-off driver, Thermal Shut Down
(TSD) protection and temperature compensated precision
current sources for loop compensation and fault protection
circuitry. The FSDM0265RNB offers better performance in
Soft Start than FSDM0265RN. When compared to a discrete
MOSFET and controller or RCC switching converter solu-
tion, the FSDM0265RNB reduces total component count,
design size, weight while increasing efficiency, productivity
and system reliability. This device provides a basic platform
that is well suited for the design of cost-effective flyback
converters.
Notes:
1. Typical continuous power in a non-ventilated enclosed
adapter with sufficient drain pattern as a heat sinker, at
50
C ambient.
2. Maximum practical continuous power in an open frame
design with sufficient drain pattern as a heat sinker, at 50
C
ambient.
3. 230 VAC or 100/115 VAC with doubler.
Typical Circuit
Figure 1. Typical Flyback Application
OUTPUT POWER TABLE
PRODUCT
230VAC
15%
(3)
85-265VAC
Adapt-
er
(1)
Open
Frame
(2)
Adapt-
er
(1)
Open
Frame
(2)
FSDM0265RNB
16W
27W
13W
20W
FSDL0365RNB
19W
30W
16W
24W
FSDM0365RNB
19W
30W
16W
24W
Drain
Source
Vstr
Vfb
Vcc
PWM
AC
IN
DC
OUT
Ipk
FSDM0265RNB
Green Mode Fairchild Power Switch (FPS
TM
)
FSDM0265RNB
2
Internal Block Diagram
Figure 2. Functional Block Diagram of FSDM0265RNB
8V/12V
2
6,7,8
1
3
Vref
Internal
Bias
S
Q
Q
R
OSC
Vcc
Vcc
I
DELAY
I
FB
V
SD
TSD
Vovp
Vcc
Soft Start
S
Q
Q
R
R
2.5R
Vcc good
Vcc
Drain
Vfb
GND
Gate
driver
5
Vstr
I
CH
Vcc good
V
BURL
/V
BURH
LEB
+
-
4
Ipk
Freq.
Modulation
V
BURH
Vcc
I
BUR(pk)
Burst
Normal
PWM
FSDM0265RNB
3
Pin Definitions
Pin Configuration
Figure 3. Pin Configuration (Top View)
Pin Number
Pin Name
Pin Function Description
1
GND
Sense FET source terminal on primary side and internal control ground.
2
Vcc
Positive supply voltage input. Although connected to an auxiliary transform-
er winding, current is supplied from pin 5 (Vstr) via an internal switch during
startup (see Internal Block Diagram section). It is not until Vcc reaches the
UVLO upper threshold (12V) that the internal start-up switch opens and de-
vice power is supplied via the auxiliary transformer winding.
3
Vfb
The feedback voltage pin is the non-inverting input to the PWM comparator.
It has a 0.9mA current source connected internally while a capacitor and op-
tocoupler are typically connected externally. A feedback voltage of 6V trig-
gers over load protection (OLP). There is a time delay while charging
external capacitor Cfb from 3V to 6V using an internal 5uA current source.
This time delay prevents false triggering under transient conditions, but still
allows the protection mechanism to operate under true overload conditions.
4
Ipk
This pin adjusts the peak current limit of the Sense FET. The feedback
0.9mA current source is diverted to the parallel combination of an internal
2.8k
resistor and any external resistor to GND on this pin to determine the
peak current limit. If this pin is tied to Vcc or left floating, the typical peak cur-
rent limit will be 1.5A.
5
Vstr
This pin connects directly to the rectified AC line voltage source. At start up
the internal switch supplies internal bias and charges an external storage
capacitor placed between the Vcc pin and ground. Once the Vcc reaches
12V, the internal switch is opened.
6, 7, 8
Drain
The drain pins are designed to connect directly to the primary lead of the
transformer and are capable of switching a maximum of 650V. Minimizing
the length of the trace connecting these pins to the transformer will decrease
leakage inductance.
1
2
3
4
5
6
7
8
GND
Vcc
Vfb
Ipk
Vstr
Drain
Drain
Drain
8DIP
FSDM0265RNB
4
Absolute Maximum Ratings
(Ta=25
C, unless otherwise specified)
Note:
1. Repetitive rating: Pulse width is limited by maximum junction temperature
2. L = 51mH, starting Tj = 25
C
Thermal Impedance
(Ta=25
C, unless otherwise specified)
Note:
1. Free standing with no heatsink; Without copper clad.
/ Measurement Condition : Just before junction temperature T
J
enters into OTP.
2. Measured on the DRAIN pin close to plastic interface.
3. Measured on the PKG top surface.
- all items are tested with the standards JESD 51-2 and 51-10 (DIP).
Characteristic
Symbol
Value
Unit
Drain Pin Voltage
V
DRAIN
650
V
Vstr Pin Voltage
V
STR
650
V
Drain Current Pulsed
(1)
I
DM
8.0
A
Single Pulsed Avalanche Energy
(2)
E
AS
68
mJ
Supply Voltage
V
CC
20
V
Feedback Voltage Range
V
FB
-0.3 to V
CC
V
Total Power Dissipation
P
D
1.56
W
Operating Junction Temperature
T
J
Internally limited
C
Operating Ambient Temperature
T
A
-25 to +85
C
Storage Temperature
T
STG
-55 to +150
C
Parameter
Symbol
Value
Unit
8DIP
Junction-to-Ambient Thermal
(1)
JA
79.64
C/W
Junction-to-Case Thermal
(2)
JC
18.20
C/W
Junction-to-Top Thermal
(3)
JT
34.30
C/W
FSDM0265RNB
5
Electrical Characteristics
(Ta = 25
C unless otherwise specified)
Note:
1. Pulse test: Pulse width 300us, duty 2%
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
3. These parameters, although guaranteed, are not 100% tested in production
Parameter Symbol
Condition
Min.
Typ.
Max.
Unit
SENSE FET SECTION
Zero-Gate-Voltage Drain Current
I
DSS
V
DS
=650V, V
GS
=0V -
-
50
A
V
DS
=520V, V
GS
=0V,
T
C
=125
C
-
-
200
A
Drain-Source On-State Resistance
(1)
R
DS(ON)
V
GS
=10V, I
D
=0.5A -
5.0
6.0
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
f=1MHz
-
550
-
pF
Output Capacitance
C
OSS
-
38
-
pF
Reverse Transfer Capacitance
C
RSS
-
17
-
pF
Turn-On Delay Time
t
d(on)
V
DS
=325V, I
D
=1.0A
-
20
-
ns
Rise Time
t
r
-
15
-
ns
Turn-Off Delay Time
t
d(off)
-
55
-
ns
Fall Time
t
f
-
25
-
ns
CONTROL SECTION
Switching Frequency
f
OSC
61
67
73
KHz
Switching Frequency Modulation
f
MOD
1.5 2.0 2.5 KHz
Switching Frequency Variation
(2)
f
OSC
-25
C Ta 85C
-
5 10 %
Maximum Duty Cycle
D
MAX
62
67
72
%
Minimum Duty Cycle
D
MIN
0
0
0
%
UVLO Threshold Voltage
V
START
V
FB
=GND 11
12
13
V
V
STOP
V
FB
=GND 7
8
9
V
Feedback Source Current
I
FB
V
FB
=GND 0.7
0.9
1.1
mA
Internal Soft Start Time
t
S/S
V
FB
=4V 10
15
20
ms
BURST MODE SECTION
Burst Mode Voltage
V
BURH
-
0.4 0.5 0.6 V
V
BURL
-
0.25 0.35 0.45 V
PROTECTION SECTION
Peak Current Limit
I
LIM
Max. inductor current
1.3
1.5
1.7
A
Current Limit Delay Time
(3)
t
CLD
-
500
-
ns
Thermal Shutdown Temperature
T
SD
-
125
140 -
C
Shutdown Feedback Voltage
V
SD
5.5
6.0
6.5
V
Over Voltage Protection
V
OVP
18
19
-
V
Shutdown Delay Current
I
DELAY
V
FB
=4V 3.5
5.0
6.5
A
Leading Edge Blanking Time
t
LEB
200 -
-
ns
TOTAL DEVICE SECTION
Operating Supply Current
(control part only)
I
OP
V
CC
=14V 1
3
5
mA
Start-Up Charging Current
I
CH
V
CC
=0V 0.7
0.85
1.0
mA
Vstr Supply Voltage
V
STR
V
CC
=0V 35
-
-
V
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