2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.5
Features
Internal Avalanche Rugged Sense FET
Advanced Burst-Mode operation consumes under 1 W at
240VAC & 0.5W load
Precision Fixed Operating Frequency (66kHz)
Internal Start-up Circuit
Improved Pulse by Pulse Current Limiting
Over Voltage Protection (OVP)
Over Load Protection (OLP)
Internal Thermal Shutdown Function (TSD)
Auto-Restart Mode
Under Voltage Lock Out (UVLO) with hysteresis
Low Operating Current (2.5mA)
Built-in Soft Start
Application
SMPS for LCD monitor and STB
Adaptor
Description
The FSDM0565RB is an integrated Pulse Width Modulator
(PWM) and Sense FET specifically designed for high
performance offline Switch Mode Power Supplies (SMPS)
with minimal external components. This device is an
integrated high voltage power switching regulator which
combine an avalanche rugged Sense FET with a current mode
PWM control block. The PWM controller includes integrated
fixed frequency oscillator, under voltage lockout, leading edge
blanking (LEB), optimized gate driver, internal soft start,
temperature compensated precise current sources for a loop
compensation and self protection circuitry. Compared with
discrete MOSFET and PWM controller solution, it can reduce
total cost, component count, size and weight simultaneously
increasing efficiency, productivity, and system reliability. This
device is a basic platform well suited for cost effective
designs of flyback converters.
Table 1. Maximum Output Power
Notes:
1. Typical continuous power in a non-ventilated enclosed
adapter measured at 50
C ambient.
2. Maximum practical continuous power in an open frame
design at 50
C ambient.
3. 230 VAC or 100/115 VAC with doubler.
Typical Circuit
Figure 1. Typical Flyback Application
OUTPUT POWER TABLE
PRODUCT
230VAC
15%
(3)
85-265VAC
Adapt-
er
(1)
Open
Frame
(2)
Adapt-
er
(1)
Open
Frame
(2)
FSDM0565RB
60W
70W
50W
60W
FSDM0565RBI
60W
70W
50W
60W
FSDM07652RB
70W
80W
60W
70W
Drain
Source
Vstr
Vfb
Vcc
PWM
AC
IN
DC
OUT
FSDM0565RB
Green Mode Fairchild Power Switch (FPS
TM
)
FSDM0565RB
2
Internal Block Diagram
Figure 2. Functional Block Diagram of FSDM0565RB
8V/12V
3
1
2
4
5
Vref
Internal
Bias
S
Q
Q
R
OSC
Vcc
Vref
I
delay
I
FB
V
SD
TSD
Vovp
Vcc
V
CL
S
Q
Q
R
R
2.5R
Vcc good
Vcc
Drain
N.C
FB
GND
Gate
driver
6
Vstr
I
start
Vcc good
0.5/0.7V
LEB
PWM
Soft start
+
-
FSDM0565RB
3
Pin Definitions
Pin Configuration
Figure 3. Pin Configuration (Top View)
Pin Number
Pin Name
Pin Function Description
1
Drain
This pin is the high voltage power Sense FET drain. It is designed to drive the
transformer directly.
2
GND
This pin is the control ground and the Sense FET source.
3
Vcc
This pin is the positive supply voltage input. During start up, the power is sup-
plied by an internal high voltage current source that is connected to the Vstr pin.
When Vcc reaches 12V, the internal high voltage current source is disabled and
the power is supplied from the auxiliary transformer winding.
4
Vfb
This pin is internally connected to the inverting input of the PWM comparator.
The collector of an opto-coupler is typically tied to this pin. For stable operation,
a capacitor should be placed between this pin and GND. If the voltage of this pin
reaches 6.0V, the over load protection is activated resulting in shutdown of the
FPS
TM
.
5
N.C
-
6
Vstr
This pin is connected directly to the high voltage DC link. At startup, the internal
high voltage current source supplies internal bias and charges the external ca-
pacitor that is connected to the Vcc pin. Once Vcc reaches 12V, the internal cur-
rent source is disabled.
6.Vstr
5.N.C.
4.Vfb
3.Vcc
2.GND
1.Drain
TO-220F-6L
6.Vstr
5.N.C.
4.Vfb
3.Vcc
2.GND
1.Drain
I2-PAK-6L
FSDM0565RB
4
Absolute Maximum Ratings
(Ta=25
C, unless otherwise specified)
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L=14mH, starting Tj=25
C
3. L=13uH, starting Tj=25
C
Thermal Impedance
Notes:
1. Free standing with no heat-sink under natural convection.
2. Infinite cooling condition - Refer to the SEMI G30-88.
Parameter
Symbol
Value
Unit
Drain-source voltage
V
DSS
650
V
Vstr Max Voltage
V
STR
650
V
Pulsed Drain current (Tc=25
C)
(1)
I
DM
11
A
DC
Continuous Drain Current(Tc=25
C)
I
D
2.8
A
Continuous Drain Current(Tc=100
C)
1.7
A
Single pulsed avalanche energy
(2)
E
AS
190
mJ
Single pulsed avalanche current
(3)
I
AS
-
A
Supply voltage
V
CC
20
V
Input voltage range
V
FB
-0.3 to V
CC
V
Total power dissipation(Tc=25
C)
P
D
(Watt H/S)
45
(TO-220-6L)
W
75
(I2-PAK-6L)
Operating junction temperature
T
j
Internally limited
C
Operating ambient temperature
T
A
-25 to +85
C
Storage temperature range
T
STG
-55 to +150
C
ESD Capability, HBM Model (All pins
excepts for Vstr and Vfb)
-
2.0
(GND-Vstr/Vfb=1.5kV)
kV
ESD Capability, Machine Model (All pins
excepts for Vstr and Vfb)
-
300
(GND-Vstr/Vfb=225V)
V
Parameter
Symbol
Package
Value
Unit
Junction-to-Ambient Thermal
JA
(1)
TO-220-6L
49.90
C/W
I2-PAK-6L
30
Junction-to-Case Thermal
JC
(2)
TO-220-6L
2.78
C/W
I2-PAK-6L
1.67
FSDM0565RB
5
Electrical Characteristics
(Ta = 25
C unless otherwise specified)
Parameter Symbol
Condition
Min.
Typ.
Max.
Unit
Sense FET SECTION
Drain source breakdown voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
650
-
-
V
Zero gate voltage drain current
I
DSS
V
DS
= 650V, V
GS
= 0V
-
-
500
A
V
DS
= 520V
V
GS
= 0V, T
C
= 125
C
-
-
500
A
Static drain source on resistance
(1)
R
DS(ON)
V
GS
= 10V, I
D
= 2.5A
-
1.76
2.2
Output capacitance
C
OSS
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
-
78
-
pF
Turn on delay time
T
D(ON)
V
DD
= 325V, I
D
= 5A
(MOSFET switching
time is essentially
independent of
operating temperature)
-
22
-
ns
Rise time
T
R
-
52
-
Turn off delay time
T
D(OFF)
-
95
-
Fall time
T
F
-
50
-
CONTROL SECTION
Initial frequency
F
OSC
V
FB
= 3V
60
66
72
kHz
Voltage stability
F
STABLE
13V
Vcc 18V
0
1
3
%
Temperature stability
(2)
F
OSC
-25
C Ta 85C
0
5
10
%
Maximum duty cycle
D
MAX
-
77
82
87
%
Minimum duty cycle
D
MIN
-
-
-
0
%
Start threshold voltage
V
START
V
FB
=GND
11
12
13
V
Stop threshold voltage
V
STOP
V
FB
=GND
7
8
9
V
Feedback source current
I
FB
V
FB
=GND
0.7
0.9
1.1
mA
Soft-start time
T
S
Vfb=3
-
10
15
ms
Leading Edge Blanking time
T
LEB
-
-
250
-
ns
BURST MODE SECTION
Burst Mode Voltages
(2)
V
BURH
Vcc=14V
-
0.7
-
V
V
BURL
Vcc=14V
-
0.5
-
V
PROTECTION SECTION
Peak current limit
(4)
I
OVER
V
FB
=5V, V
CC
=14V
2.0
2.25
2.5
A
Over voltage protection
V
OVP
-
18
19
20
V
Thermal shutdown temperature
(2)
T
SD
130
145
160
C
Shutdown feedback voltage
V
SD
V
FB
5.5V
5.5
6.0
6.5
V
Shutdown delay current
I
DELAY
V
FB
=5V
2.8
3.5
4.2
A
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