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Электронный компонент: FSDM311L

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2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.9
FPS
TM
is a trademark of Fairchild Semiconductor Corporation.
Features
Internal Avalanche Rugged Sense FET
Precision Fixed Operating Frequency (67KHz)
Consumes Under 0.2W at 265VAC & No Load with
Advanced Burst-Mode Operation
Internal Start-up Circuit
Pulse-by-Pulse Current Limiting
Over Voltage Protection (OVP)
Over Load Protection (OLP)
Internal Thermal Shutdown Function (TSD)
Auto-Restart Mode
Under Voltage Lockout (UVLO) with Hysteresis
Built-in Soft Start
Secondary Side Regulation
Applications
Charger & Adapter for Mobile Phone, PDA & MP3
Auxiliary Power for White Goods, PC, C-TV & Monitor
Related Application Notes
AN-4137, 4141, 4147(Flyback) / AN-4134(Forward) /
AN-4138(Charger)
Description
The FSDM311 consists of an integrated Pulse Width Modu-
lator (PWM) and Sense FET, and is specifically designed for
high performance off-line Switch Mode Power Supplies
(SMPS) with minimal external components. This device is
an integrated high voltage power switching regulator which
combines an VDMOS Sense FET with a voltage mode PWM
control block. The integrated PWM controller features
include: a fixed oscillator, Under Voltage Lock Out (UVLO)
protection, Leading Edge Blanking (LEB), an optimized gate
turn-on/turn-off driver, Thermal Shut Down (TSD) protec-
tion and temperature compensated precision current sources
for loop compensation and fault protection circuitry. When
compared to a discrete MOSFET and controller or RCC
switching converter solution, the FSDM311 device reduces
total component count, design size, weight while increasing
efficiency, productivity and system reliability. This device
provides a basic platform that is well suited for the design of
cost-effective flyback converters.
Notes:
1. Maximum practical continuous power in an open frame
design with sufficient drain pattern as a heat sinker, at 50
C
ambient.
2. 230 VAC or 100/115 VAC with doubler.
Typical Circuit
Figure 1. Typical Flyback Application
OUTPUT POWER TABLE
PRODUCT
Open Frame
(1)
230VAC
15%
(2)
85-265VAC
FSDM311
13W
8W
FSDM311L
13W
8W
Drain
Source
Vstr
Vfb
Vcc
PWM
AC
IN
DC
OUT
FSDM311
Green Mode Fairchild Power Switch (FPS
TM
)
FSDM311
2
Internal Block Diagram
Figure 2. Functional Block Diagram of FSDM311
2
UVLO
Voltage
Ref
Vcc
Internal
Bias
Rsense
I
LIM
S/S
15mS
3
6,7,8
1
OSC
S
R
Q
TSD
S
R
Q
LEB
OLP
A/R
DRIVER
I
DELAY
5uA
I
FB
400uA
Vck
Vth
SFET
Drain
GND
Vfb
BURST
V
SD
PWM
Min.20V
OVP
4
NC
5
H
Vstr
L
9/7V
Reset
V
BURL
/
V
BURH
FSDM311
3
Pin Definitions
Pin Configuration
Figure 3. Pin Configuration (Top View)
Pin Number
Pin Name
Pin Function Description
1
GND
Sense FET source terminal on primary side and internal control ground.
2
Vcc
Positive supply voltage input. Although connected to an auxiliary transform-
er winding, current is supplied from pin 5 (Vstr) via an internal switch during
startup (see Internal Block Diagram section). It is not until Vcc reaches the
UVLO upper threshold (9V) that the internal start-up switch opens and de-
vice power is supplied via the auxiliary transformer winding.
3
Vfb
The feedback voltage pin is the inverting input to the PWM comparator with
its normal input level lies between 0.5V and 2.5V. It has a 0.4mA current
source connected internally while a capacitor and optocoupler are typically
connected externally. A feedback voltage of 4.5V triggers over load protec-
tion (OLP). There is a time delay while charging external capacitor Cfb from
3V to 4.5V using an internal 5uA current source. This time delay prevents
false triggering under transient conditions, but still allows the protection
mechanism to operate under true overload conditions.
5
Vstr
This pin connects directly to the rectified AC line voltage source. At start up
the internal switch supplies internal bias and charges an external storage
capacitor placed between the Vcc pin and ground. Once the Vcc reaches
9V, the internal switch is opened.
6, 7, 8
Drain
The drain pins are designed to connect directly to the primary lead of the
transformer and are capable of switching a maximum of 650V. Minimizing
the length of the trace connecting these pins to the transformer will decrease
leakage inductance.
1
2
3
4
5
6
7
8
GND
Vcc
Vfb
NC
Vstr
Drain
Drain
Drain
8DIP
8LSOP
FSDM311
4
Absolute Maximum Ratings
(Ta=25
C, unless otherwise specified)
Note:
1. Repetitive rating: Pulse width is limited by maximum junction temperature
2. L = 24mH, starting Tj = 25
C
Thermal Impedance
(Ta=25
C, unless otherwise specified)
Note:
1. Free standing with no heatsink; Without copper clad.
/ Measurement Condition : Just before junction temperature T
J
enters into OTP.
2. Measured on the DRAIN pin close to plastic interface.
- all items are tested with the standards JESD 51-2 and 51-10 (DIP).
Characteristic
Symbol
Value
Unit
Drain Pin Voltage
V
DRAIN
650
V
Vstr Pin Voltage
V
STR
650
V
Drain-Gate Voltage
V
DG
650
V
Gate-Source Voltage
V
GS
20
V
Drain Current Pulsed
(1)
I
DM
1.5
A
Continuous Drain Current
(Tc=25)
I
D
0.5
A
Continuous Drain Current
(Tc=100)
I
D
0.32
A
Single Pulsed Avalanche Energy
(2)
E
AS
10
mJ
Supply Voltage
V
CC
20
V
Feedback Voltage Range
V
FB
-0.3 to V
STOP
V
Total Power Dissipation
P
D
1.40
W
Operating Junction Temperature
T
J
Internally limited
C
Operating Ambient Temperature
T
A
-25 to +85
C
Storage Temperature
T
STG
-55 to +150
C
Parameter
Symbol
Value
Unit
8DIP
Junction-to-Ambient Thermal
(1)
JA
88.84
C/W
Junction-to-Case Thermal
(2)
JC
13.94
C/W
FSDM311
5
Electrical Characteristics
(Ta = 25
C unless otherwise specified)
Note:
1. Pulse test: Pulse width 300us, duty 2%
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
3. These parameters, although guaranteed, are not 100% tested in production
Parameter Symbol
Condition
Min.
Typ.
Max.
Unit
SENSE FET SECTION
Zero-Gate-Voltage Drain Current
I
DSS
V
DS
=650V, V
GS
=0V -
-
25
A
V
DS
=520V, V
GS
=0V, T
C
=125
C
-
-
200
Drain-Source On-State Resistance
(1)
R
DS(ON)
V
GS
=10V, I
D
=0.5A -
14
19
Forward Trans-Conductance
g
fs
V
DS
=50V, I
D
=0.5A 1.0
1.3
-
S
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
f=1MHz
-
162
-
pF
Output Capacitance
C
OSS
-
18
-
Reverse Transfer Capacitance
C
RSS
-
3.8
-
Turn-On Delay Time
t
d(on)
V
DS
=325V, I
D
=1.0A
-
9.5
-
ns
Rise Time
t
r
-
19
-
Turn-Off Delay Time
t
d(off)
-
33
-
Fall Time
t
f
-
42
-
Total Gate Charge
Q
g
V
GS
=10V, I
D
=1.0A,
V
DS
=325V
-
7.0
-
nC
Gate-Source Charge
Q
gs
-
3.1
-
Gate-Drain (Miller) Charge
Q
gd
-
0.4
-
CONTROL SECTION
Switching Frequency
f
OSC
61
67
73
KHz
Switching Frequency Variation
(2)
f
OSC
-25
C Ta 85C
-
5 10 %
Maximum Duty Cycle
D
MAX
60 67 74 %
UVLO Threshold Voltage
V
START
V
FB
=GND 8
9
10
V
V
STOP
V
FB
=GND 6
7
8
V
Feedback Source Current
I
FB
0V V
FB
3V 0.35
0.40
0.45
mA
Internal Soft Start Time
t
S/S
10
15
20
ms
Reference Voltage
(3)
V
REF
4.2
4.5
4.8
V
Reference Voltage Varaiation with
Temperature
(2)(3)
V
REF
/
T -25C Ta 85C
-
0.3
0.6
mV/
C
BURST MODE SECTION
Burst Mode Voltage
V
BURH
Tj=25
C
0.6
0.7 0.8 V
V
BURL
0.45 0.55 0.65 V
V
BUR(HYS)
Hysteresis
-
150 -
mV
PROTECTION SECTION
Peak Current Limit
I
LIM
0.475 0.55
0.625 A
Thermal Shutdown Temperature
(3)
T
SD
125
145
-
C
Shutdown Feedback Voltage
V
SD
4.0
4.5
5.0
V
Over Voltage Protection
V
OVP
20
-
-
V
Shutdown Delay Current
I
DELAY
3
V V
FB
V
SD
4 5 6
A
TOTAL DEVICE SECTION
Operating Supply Current
(control part only)
I
OP
V
CC
16V
- 1.5
3.0
mA
Start-Up Charging Current
I
CH
V
CC
=0V , V
STR
=50V
450
550
650
A
FSDM311
6
Comparison Between FSDH0165 and FSDM311
Function
FSDH0165
FSDM311
FSDM311 Advantages
Soft-Start
not applicable
15ms
Gradually increasing current limit
during soft-start further reduces peak
current and voltage stresses
Eliminates external components used
for soft-start in most applications
Reduces or eliminates output
overshoot
Burst Mode Operation
not applicable
Built into controller
Improves light load efficiency
Reduces power consumption at no-
load
Transformer audible noise reduction
Drain Creepage at
Package
1.02mm
3.56mm DIP
3.56mm LSOP
Greater immunity to arcing provoked
by dust, debris and other contami-
nants
FSDM311
7
Typical Performance Characteristics (Control Part)
(These characteristic graphs are normalized at Ta = 25
C)
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
Vref
Temperature('C)
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
Vstart
Temperature('C)
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
Vst
o
p
Temperature('C)
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
Fo
s
c
Temperature('C)
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
Dm
ax
Temperature('C)
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
Io
p
Temperature('C)
Reference Voltage (V
REF
) vs. Ta
Operating Supply Current (I
OP
) vs. Ta
Start Threshold Voltage (V
START
) vs. Ta
Stop Threshold Voltage (V
STOP
) vs. Ta
Operating Frequency (F
OSC
) vs. Ta
Maximum Duty Cycle (D
MAX
) vs. Ta
FSDM311
8
Typical Performance Characteristics
(Continued)
Peak Current Limit (I
LIM
) vs. Ta
Feedback Source Current (I
FB
) vs. Ta
Shutdown Delay Current (I
DELAY
) vs. Ta
Shutdown Feedback Voltage (V
SD
) vs. Ta
Over Voltage Protection (V
OVP
) vs. Ta
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
Ifb
Temperature('C)
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
Id
el
ay
Temperature('C)
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
Vovp
Temperature('C)
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
Vsd
Temperature('C)
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
Iov
e
r
Temperature('C)
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
I
LI
M
Temperature('C)
FSDM311
9
Functional Description
1. Startup : At startup, the internal high voltage current
source supplies the internal bias and charges the external
Vcc capacitor as shown in Figure 4. In the case of the
FSDM311, when Vcc reaches 9V the device starts switching
and the internal high voltage current source is disabled. The
device is in normal operation provided that Vcc does not
drop below 7V. After startup the bias is supplied from the
auxiliary transformer winding.
Figure 4. Internal Startup Circuit
Calculating the Vcc capacitor is an important step to design
with the FSDM311. At initial start-up in the FSDM311, the
maximum value of start operating current I
START
is about
100uA, which supplies current to UVLO and Vref Blocks.
The charging current I
Vcc
of the Vcc capacitor is equal to
Istr - 100uA. After Vcc reaches the UVLO start voltage only
the bias winding supplies Vcc current to device. When the
bias winding voltage is not sufficient, the Vcc level
decreases to the UVLO stop voltage. At this time Vcc oscil-
lates. In order to prevent this oscillation it is recommended
that the Vcc capacitor be chosen to have the value between
10uF and 47uF.
Figure 5. Charging Vcc Capacitor through Vstr
2. Feedback Control : The FSDM311 is the voltage mode
controlled device as shown in Figure 6. Usually, an opto-
coupler and KA431 type voltage reference are used to
implement the feedback network. The feedback voltage is
compared with an internally generated sawtooth waveform.
This directly controls the duty cycle. When the KA431
reference pin voltage exceeds the internal reference voltage
of 2.5V, the optocoupler LED current increases, the feedback
voltage Vfb is pulled down and it reduces the duty cycle.
This will happen when the input voltage increases or the
output load decreases.
Figure 6. PWM and Feedback Circuit
Vin,dc
Vstr
Vcc
I
STR
FSDM311
9V/
7V
L
H
Vin,dc
Vstr
I
STR
J-FET
UVLO
Vref
I
START
I
Vcc
= I
STR
-I
START
I
Vcc
= I
STR
-I
START
FSDM311
Vcc
V
START
V
STOP
t
Vcc
Vcc must not drop
below V
STOP
Bias winding
voltage
UVLO
4
OSC
Vcc
Vref
5uA
0.40mA
V
SD
R
Gate
driver
OLP
Vfb
KA431
Cfb
Vo
+
V
FB
-
FSDM311
10
3. Leading Edge Blanking (LEB) : At the instant the inter-
nal Sense FET is turned on, the primary side capacitance and
secondary side rectifier diode reverse recovery typically
cause a high current spike through the Sense FET. Excessive
voltage across the Rsense resistor leads to incorrect feedback
operation in the current mode PWM control. To counter this
effect, the FPS employs a leading edge blanking (LEB) cir-
cuit. This circuit inhibits the PWM comparator for a short
time (t
LEB
) after the Sense FET is turned on.
4. Protection Circuit : The FSDM311 has several protective
functions such as over load protection (OLP), over voltage
protection (OVP), under voltage lock out (UVLO) and
thermal shutdown (TSD). Because these protection circuits
are fully integrated inside the IC without external compo-
nents, the reliability is improved without increasing cost.
Once a fault condition occurs, switching is terminated and
the Sense FET remains off. This causes Vcc to fall. When
Vcc reaches the UVLO stop voltage V
STOP
(7V), the
protection is reset and the internal high voltage current
source charges the Vcc capacitor via the Vstr pin. When Vcc
reaches the UVLO start voltage V
START
(9V), the device
resumes its normal operation. In this manner, the auto-restart
can alternately enable and disable the switching of the power
Sense FET until the fault condition is eliminated.
Figure 7. Protection Block
4.1 Over Load Protection (OLP) : Overload is defined as
the load current exceeding a pre-set level due to an
unexpected event. In this situation, the protection circuit
should be activated in order to protect the SMPS. However,
even when the SMPS is operating normally, the over load
protection (OLP) circuit can be activated during the load
transition. In order to avoid this undesired operation, the
OLP circuit is designed to be activated after a specified time
to determine whether it is a transient situation or an overload
situation. In conjunction with the Ipk current limit pin (if
used) the current mode feedback path would limit the current
in the Sense FET when the maximum PWM duty cycle is
attained. If the output consumes more than this maximum
power, the output voltage (Vo) decreases below its rating
voltage. This reduces the current through the opto-coupler
LED, which also reduces the opto-coupler transistor current,
thus increasing the feedback voltage (V
FB
). If V
FB
exceeds
3V, the feedback input diode is blocked and the 5uA current
source (I
DELAY
) starts to charge Cfb slowly up to Vcc. In
this condition, V
FB
increases until it reaches 4.5V, when the
switching operation is terminated as shown in Figure 8. The
shutdown delay time is the time required to charge Cfb from
3V to 4.5V with 5uA current source.
Figure 8. Over Load Protection (OLP)
4.2 Thermal Shutdown (TSD) : The Sense FET and the
control IC are integrated, making it easier for the control IC
to detect the temperature of the Sense FET. When the
temperature exceeds approximately 145
C, thermal
shutdown is activated.
OSC
4
Vfb
S
R
Q
GATE
DRIVER
FSDM311
OLP, TSD
Protection Block
5uA
400uA
RESET
4.5V
OLP
+
-
TSD
S
R
Q
A/R
Cfb
R
V
FB
t
3V
4.5V
Over Load Protection
t
12
= C
FB
(V(t
2
)-V(t
1
)) / I
DELAY
t
1
t
2
V
t
V
V
t
V
A
I
I
t
V
t
V
C
t
DELAY
DELAY
FB
5
.
4
)
(
,
3
)
(
,
5
;
)
(
)
(
2
1
1
2
12
=
=
=
-
=
FSDM311
11
5. Soft Start : The FPS has an internal soft start circuit that
slowly increases the feedback voltage together with the
Sense FET current after it starts up. The typical soft start
time is 15msec, as shown in Figure 9, where progressive
increments of the Sense FET current are allowed during the
start-up phase. The pulse width to the power switching
device is progressively increased to establish the correct
working conditions for transformers, inductors, and capac-
itors. The voltage on the output capacitors is progressively
increased with the intention of smoothly establishing the
required output voltage. It also helps to prevent transformer
saturation and reduce the stress on the secondary diode.
Figure 9. Internal Soft Start
6. Burst operation : In order to minimize the power dissi-
pation in standby mode, the FSDM311 enters burst mode
operation. As the load decreases, the feedback voltage
decreases. The device automatically enters burst mode when
the feedback voltage drops below V
BURL
(0.55V). At this
point switching stops and the output voltages start to drop.
This causes the feedback voltage to rise. Once is passes
V
BURH
(0.70V) switching starts again. The feedback voltage
falls and the process repeats. Burst mode operation alter-
nately enables and disables switching of the power MOSFET
to reduce the switching loss in the standby mode.
Figure 10. Burst Operation Function
2.14m s
7steps
0.31A
0.55A
t
D rain current
V
FB
Vds
0.55V
0.7V
Ids
Vo
Vo
set
t
OSC
4
Vfb
S
R
Q
GATE
DRIVER
5uA
400uA
0.70V
/0.55V
on/off
FSDM311
Burst Operation Block
FSDM311
12
Application Tips
1. Methods of Reducing Audible Noise
Switching mode power converters have electronic and
magnetic components, which generate audible noises when
the operating frequency is in the range of 20~20,000 Hz.
Even though they operate above 20 kHz, they can make
noise depending on the load condition. Designers can
employ several methods to reduce these noises. Here are
three of these methods:
Glue or Varnish
The most common method involves using glue or varnish
to tighten magnetic components. The motion of core, bobbin
and coil and the chattering or magnetostriction of core can
cause the transformer to produce audible noise. The use of
rigid glue and varnish helps reduce the transformer noise.
But, it also can crack the core. This is because sudden
changes in the ambient temperature cause the core and the
glue to expand or shrink in a different ratio according to the
temperature.
Ceramic Capacitor
Using a film capacitor instead of a ceramic capacitor as a
snubber capacitor is another noise reduction solution. Some
dielectric materials show a piezoelectric effect depending on
the electric field intensity. Hence, a snubber capacitor
becomes one of the most significant sources of audible
noise. It is considerable to use a zener clamp circuit instead
of an RCD snubber for higher efficiency as well as lower
audible noise.
Adjusting Sound Frequency
Moving the fundamental frequency of noise out of 2~4 kHz
range is the third method. Generally, humans are more sensi-
tive to noise in the range of 2~4 kHz. When the fundamental
frequency of noise is located in this range, one perceives the
noise as louder although the noise intensity level is identical.
Refer to Figure 11. Equal Loudness Curves.
When FPS acts in Burst mode and the Burst operation is
suspected to be a source of noise, this method may be help-
ful. If the frequency of Burst mode operation lies in the
range of 2~4 kHz, adjusting feedback loop can shift the
Burst operation frequency. In order to reduce the Burst oper-
ation frequency, increase a feedback gain capacitor (C
F
),
opto-coupler supply resistor (R
D
) and feedback capacitor
(C
B
) and decrease a feedback gain resistor (R
F
) as shown in
Figure 12. Typical Feedback Network of FPS.
Figure 11. Equal Loudness Curves
Figure 12. Typical Feedback Network of FPS
2. Other Reference Materials
AN-4134: Design Guidelines for Off-line Forward Convert-
ers Using Fairchild Power Switch (FPS
TM
)
AN-4137: Design Guidelines for Off-line Flyback Convert-
ers Using Fairchild Power Switch (FPS)
AN-4138: Design Considerations for Battery Charger Using
Green Mode Fairchild Power Switch (FPS
TM
)
AN-4140: Transformer Design Consideration for Off-line
Flyback Converters using Fairchild Power Switch
(FPS
TM
)
AN-4141: Troubleshooting and Design Tips for Fairchild
Power Switch (FPS
TM
) Flyback Applications
AN-4147: Design Guidelines for RCD Snubber of Flyback
AN-4148: Audible Noise Reduction Techniques for FPS
Applications
FSDM311
13
Package Dimensions
8DIP
FSDM311
14
Package Dimensions
(Continued)
8LSOP
FSDM311
15
Ordering Information
Product Number
Package
Marking Code
BV
DSS
f
OSC
R
DS(ON)
FSDM311
8DIP
DM311
650V
67KHz
14
FSDM311L
8LSOP
DM311
650V
67KHz
14
FSDM311
9/29/05 0.0m 001
2005 Fairchild Semiconductor Corporation
LIFE SUPPORT POLICY
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OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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