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2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
HGTG10N120BN, HGTP10N120BN,
HGT1S10N120BNS
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and
HGT1S10N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49290.
Symbol
Features
35A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Thermal Impedance SPICE Model
Temperature Compensating SABERTM Model
www.fairchildsemi.com
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG10N120BN
TO-247
G10N120BN
HGTP10N120BN
TO-220AB
10N120BN
HGT1S10N120BNS
TO-263AB
10N120BN
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNST.
C
E
G
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
E
(FLANGE)
C
G
COLLECTOR
E
(FLANGE)
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
August 2002
background image
2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG10N120BN
HGTP10N120BN
HGT1S10N120BNS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
35
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
17
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
80
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
55A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
298
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.38
W/
o
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
80
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
Short Circuit Withstand Time (Note 3) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
15
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 20A, L = 400
H, T
J
= 25
o
C.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 10
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 1200V
T
C
= 25
o
C
-
-
250
A
T
C
= 125
o
C
-
150
-
A
T
C
= 150
o
C
-
-
2
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 10A,
V
GE
= 15V
T
C
= 25
o
C
-
2.45
2.7
V
T
C
= 150
o
C
-
3.7
4.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 90
A, V
CE
= V
GE
6.0
6.8
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
=
10,
V
GE
= 15V,
L = 400
H, V
CE(PK)
= 1200V
55
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 10A, V
CE
= 600V
-
10.4
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 10A,
V
CE
= 600V
V
GE
= 15V
-
100
120
nC
V
GE
= 20V
-
130
150
nC
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
background image
2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
=
10A
V
CE
= 960V
V
GE
= 15V
R
G
= 10
L = 2mH
Test Circuit (Figure 18)
-
23
26
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
165
210
ns
Current Fall Time
t
fI
-
100
140
ns
Turn-On Energy (Note 5)
E
ON1
-
0.32
0.4
mJ
Turn-On Energy (Note 5)
E
ON2
-
0.85
1.1
mJ
Turn-Off Energy (Note 4)
E
OFF
-
0.8
1.0
mJ
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 10A
V
CE
= 960V
V
GE
= 15V
R
G
= 10
L = 2mH
Test Circuit (Figure 18)
-
21
25
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
190
250
ns
Current Fall Time
t
fI
-
140
200
ns
Turn-On Energy (Note 5)
E
ON1
-
0.4
0.5
mJ
Turn-On Energy (Note 5)
E
ON2
-
1.75
2.3
mJ
Turn-Off Energy (Note 4)
E
OFF
-
1.1
1.4
mJ
Thermal Resistance Junction To Case
R
JC
-
-
0.42
o
C/W
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
CE
,
DC COL
L
ECT
O
R CURRENT
(
A
)
50
0
10
25
75
100
125
150
25
30
15
5
V
GE
= 15V
20
35
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
40
0
I
CE
, COL
L
E
CT
OR T
O
EM
I
T
T
E
R CURRENT

(
A
)
10
20
600
800
400
200
1000
1200
0
50
60
30
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 400
H
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
background image
2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 150
o
C, R
G
= 10
, L = 2mH, V
CE
= 960V
f
MA
X
,
OPERA
T
ING
F
R
EQUENCY (
k
Hz)
2
1
10
20
10
50
5
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.42
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
T
C
V
GE
110
o
C 12V
15V
15V
75
o
C
110
o
C
75
o
C 12V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, P
E
AK S
H
O
R
T

C
I
RCUIT

CURRENT
(
A
)
t
SC
, SHOR
T
CIRCUI
T
WI
T
H
ST
AN
D T
I
M
E
(
s)
12
13
14
15
16
5
10
15
20
50
100
150
250
t
SC
I
SC
25
200
V
CE
= 840V, R
G
= 10
, T
J
= 125
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, CO
L
L
ECT
O
R T
O
EM
IT
T
E
R CURRENT
(
A
)
0
10
30
6
8
10
40
50
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 12V
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
20
I
CE
, COL
L
E
C
T
OR T
O
EM
I
T
T
E
R CURRENT
(
A
)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
30
40
0
2
4
6
8
10
10
50
0
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
E
ON2
, T
URN-
O
N
ENERGY L
O
SS (
m
J
)
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
3
2
5
0
5
10
0
15
20
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 10
, L = 2mH, V
CE
= 960V
1
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OF
F
, T
URN-
O
F
F
ENERGY L
O
SS (
m
J
)
0
5
0
1.0
0.5
2.0
10
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
15
20
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
background image
2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
T
URN-
ON
DEL
A
Y T
I
M
E
(
n
s
)
0
15
20
25
30
35
5
40
15
20
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
R
I
SE TI
M
E
(
n
s
)
0
10
30
20
15
0
10
5
20
40
50
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
0
250
5
100
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(
O
FF)
I
, T
URN-
OF
F
DEL
A
Y T
I
M
E
(
n
s
)
15
400
300
350
20
R
G
= 10
, L = 2mH, V
CE
= 960V
10
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
A
L
L
TI
ME
(n
s)
0
50
150
200
5
100
250
300
20
15
10
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
R
G
= 10
, L = 2mH, V
CE
= 960V
I
CE
, CO
L
L
ECT
O
R T
O
EM
IT
T
E
R CURRENT
(
A
)
0
40
13
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
60
80
14
15
100
T
C
= 150
o
C
T
C
= -55
o
C
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 20V
20
T
C
= 25
o
C
7
V
GE
, G
A
T
E
T
O
E
M
IT
T
E
R
V
O
L
T
A
GE
(V
)
Q
G
, GATE CHARGE (nC)
5
20
0
0
60
20
80
V
CE
= 800V
I
G
(REF)
= 1mA, R
L
= 60
, T
C
= 25
o
C
V
CE
= 1200V
10
15
120
V
CE
= 400V
100
40
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS