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S E M I C O N D U C T O R
5-3
HGTG20N60C3R, HGTP20N60C3R,
HGT1S20N60C3R, HGT1S20N60C3RS
40A, 600V, Rugged UFS Series N-Channel IGBTs
Features
40A, 600V T
J
= 25
o
C
600V Switching SOA Capability
Typical Fall Time at T
J
= 150
o
C . . . . . . . . . . . . . 330ns
Short Circuit Rating at T
J
= 150
o
C . . . . . . . . . . . . . 10
s
Low Conduction Loss
Description
This family of IGBTs was designed for optimum performance
in the demanding world of motor control operation as well as
other high voltage switching applications. These devices
demonstrate RUGGED performance capability when
subjected to harsh SHORT CIRCUIT WITHSTAND TIME
(SCWT) conditions. The parts have ULTRAFAST (UFS)
switching speed while the on-state conduction losses have
been kept at a low level.
The electrical specifications include typical Turn-On and
Turn-Off dv/dt ratings. These ratings and the Turn-On ratings
include the effect of the diode in the test circuit (Figure 16).
The data was obtained with the diode at the same T
J
as the
IGBT under test.
Formerly Developmental Type TA49047.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP20N60C3R
TO-220AB
20N60C3R
HGTG20N60C3R
TO-247
20N60C3R
HGT1S20N60C3R
TO-262AA
20N60C3R
HGT1S20N60C3RS
TO-263AB
20N60C3R
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3RS9A.
C
E
G
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
JEDEC TO-262AA
E
C
G
COLLECTOR
(FLANGE)
E
C
G
COLLECTOR
(FLANGE)
G
E
COLLECTOR
(FLANGE)
A
A
M
G
E
C
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
January 1997
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
4226.1
5-4
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
40
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
20
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
80
A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C, Fig. 12 . . . . . . . . . . . . . . . . . . . . . . SSOA
80A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
164
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/
o
C
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to 150
o
C
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
10
s
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 440V, T
J
= 150
o
C, R
GE
= 10
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
V
CE
= BV
CES
T
C
= 150
o
C
-
-
3.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.8
2.2
V
T
C
= 150
o
C
-
2.1
2.5
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A,
V
CE
= V
GE
T
C
= 25
o
C
3.5
6.3
7.5
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
100
nA
Switching SOA (See Figure 12)
SSOA
T
J
= 150
o
C
R
G
= 10
V
GE
= 15V
V
CE(PK)
= 600V
L = 1mH
80
-
-
A
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
9.0
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
ES
V
GE
= 15V
-
87
110
nC
V
GE
= 20V
-
116
150
nC
Current Turn-On Delay Time
t
D(ON)I
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 1mH
Diode used in test circuit
RURP1560 at 150
o
C
-
34
-
ns
Current Rise Time
t
RI
-
40
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
390
500
ns
Current Fall Time
t
FI
-
330
400
ns
Turn-Off Voltage dv/dt (Note 3)
dV
CE
/dt
-
1.3
-
V/ns
Turn-On Voltage dv/dt (Note 3)
dV
CE
/dt
-
7.0
-
V/ns
Turn-On Energy (Note 4)
E
ON
-
2.3
-
mJ
Turn-Off Energy (Note 5)
E
OFF
-
3.0
-
mJ
Thermal Resistance
R
JC
-
-
0.76
o
C/W
NOTES:
3. dV
CE
/dt depends on the diode used and the temperature of the diode.
4. Turn-On Energy Loss (E
ON
) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading
edge of the input pulse and ending at the point where the collector voltage equals V
CE(ON)
. This value of E
ON
was obtained with a
RURP1560 diode at T
J
= 150
o
C. A different diode or temperature will result in a different E
ON
. For example with diode at T
J
= 25
o
C E
ON
is about one half the value at 150
o
C.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
5-5
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR EMITTER ON STATE VOLTAGE
FIGURE 4. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
FIGURE 5. TURN ON DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 6. TURN OFF DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
9
10
13
20
50
60
70
15
30
80
I
CE
, COLLECT
OR EMITTER CURRENT (A)
8
7
6
11
12
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
10
0
40
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250
s
I
CE
, COLLECT
OR EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
15
20
25
30
35
40
4
3
2
1
0
5
6
7
8
9
10
10
5
0
V
GE
= 15.0V
12.0V
10.0V
9.0V
8.0V
8.5V
7.5V
DUTY CYCLE <0.5%, T
C
= 25
o
C
PULSE DURATION = 250
s
I
CE
, COLLECT
OR EMITTER CURRENT (A)
40
2
6
4
10
50
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
30
60
70
80
8
0
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -40
o
C
0
10
20
90
1
3
5
7
9
PULSE DURATION = 250
s
DUTY CYCLE <0.5%
V
GE
= 15V
I
CE
, DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
V
GE
= 15V
5
10
15
25
35
40
26
28
30
32
34
t
D(ON)I
, TURN ON DELA
Y TIME (ns)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
36
38
20
30
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 15V
t
D(OFF)I
, TURN OFF DELA
Y TIME (ns)
5
10
15
I
CE
, COLLECTOR EMITTER CURRENT (A)
25
35
20
300
400
425
350
325
275
40
30
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V, V
GE
= 15V
375
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
5-6
FIGURE 7. TURN ON RISE TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 8. TURN OFF FALL TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 9. TURN ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 10. TURN OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 11. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 12. SWITCHING SAFE OPERATING AREA
Typical Performance Curves
(Continued)
t
RI
,
TURN ON RISE TIME
(ns)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
5
10
20
25
35
20
40
60
80
40
0
120
15
30
100
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V,
V
GE
= 15V
I
CE
, COLLECTOR EMITTER CURRENT (A)
t
FI
,
F
ALL TIME
(ns)
250
15
20
25
30
35
40
275
300
325
350
375
400
425
450
5
10
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR EMITTER CURRENT (A)
E
ON
, TURN ON ENERGY LOSS
(mJ)
30
40
20
15
5
1.0
2.0
3.0
10
25
35
4.0
5.0
6.0
0
T
J
= 150
o
C, R
G
= 10
, L = 1mH,
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR EMITTER CURRENT (A)
E
OFF
, TURN OFF ENERGY LOSS
(mJ)
5
10
15
20
25
30
35
40
1.5
2.5
3.5
4.5
5.5
6.5
0.5
T
J
= 150
o
C, R
G
= 10
, L = 1mH,
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR EMITTER CURRENT (A)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
30
40
20
10
5
1
10
30
20
100
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
(DUTY FACTOR = 50%)
R
JC
= 0.76
o
C/W
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V
T
C
= 75
o
C, V
GE
= 15V
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR EMITTER CURRENT (A)
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 1mH
0
20
40
60
80
100
0
100
200
300
400
500
600
700
PARTS MAY CURRENT LIMIT IN THIS REGION.
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
5-7
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveform
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
Typical Performance Curves
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
500
1000
1500
2000
2500
C, CAP
A
CIT
ANCE (pF)
C
IES
C
RES
3000
3500
4000
FREQUENCY = 1MHz
C
OES
4500
V
GE
, GA
TE-EMITTER V
O
L
T
A
GE (V)
V
CE
, COLLECT
OR EMITTER
V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
240
600
12
6
0
20
80
90
360
15
3
9
0
0
120
480
70
60
50
30
10
40
V
CE
= 400V
V
CE
= 200V
V
CE
= 600V
I
G
REF = 1.376mA, R
L
= 30
, T
C
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.1
0.2
0.05
0.02
SINGLE PULSE
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
Z
JC
,
NORMALIZED THERMAL
RESPONSE
0.5
0.01
R
G
= 10
L = 1mH
V
DD
= 480V
+
-
RURP1560
t
FI
t
D(OFF)I
t
RI
t
D(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
5-8
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
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Mercure Center
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TEL: (65) 748-4200
FAX: (65) 748-0400
S E M I C O N D U C T O R
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler's body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBT's
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as "ECCOSORBD
TM
LD26" or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V
GEM
. Exceeding the rated V
GE
can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
ECCOSORBD
TM
is a Trademark of Emerson and Cumming, Inc.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 11) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 3, 5, 6, 9
and 10. The operating frequency plot (Figure 11) of a typical
device shows f
MAX1
or f
MAX2
whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on- state time for a 50% duty factor. Other definitions are
possible. t
D(OFF)I
and t
D(ON)I
are defined in Figure 17.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JMAX
.
t
D(OFF)I
is important when controlling output ripple under a
lightly loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON
). The
allowable dissipation (P
D
) is defined by P
D
= (T
JMAX
-
T
C
)/R
JC
. The sum of device switching and conduction
losses must not exceed P
D
. A 50% duty factor was used
(Figure 11) and the conduction losses (P
C
) are approxi-
mated by P
C
= (V
CE
x I
CE
)/2.
E
ON
and E
OFF
are defined in the switching waveforms
shown in Figure 17. E
ON
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-on and E
OFF
is the inte-
gral of the instantaneous power loss (I
CE
x V
CE
) during turn-
off. All tail losses are included in the calculation for E
OFF
; i.e.
the collector current equals zero (I
CE
= 0).
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
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