2005 Fairchild Semiconductor Corporation
1
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HGTP2N120CN, HGT1S2N120CN Rev. C
HG
TP2
N
1
2
0
CN, HG
T1
S
2
N1
2
0
CN 1
3
A, 12
0
0
V
,
NP
T S
e
ries
N-Cha
nne
l
IGBT
March 2005
HGTP2N120CN, HGT1S2N120CN
13A, 1200V, NPT Series N-Channel IGBT
Features
13A, 1200V, T
C
= 25
C
1200V Switching SOA Capability
Typical Fall Time 360ns at T
J
= 150
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Temperature Compensating SABERTM Model
Thermal Impedance SPICE Model
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Related Literature
TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Ordering Informations
Note: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-
263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A.
Description
The HGTP2N120CN and HGT1S2N120CN are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs combine
the best features of MOSFETs and bipolar transistors. This
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49313
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
Part Number
Package
Brand
HGTP2N120CN
TO-220AB
2N120CN
HGT1S2N120CN
TO-262
2N120CN
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
C
E
G
G
C
E
COLLECTOR
(FLANGE)
E
C
G
COLLECTOR
(FLANGE)
TO-220
TO-262
2
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HGTP2N120CN, HGT1S2N120CN Rev. C
HG
TP2
N
1
2
0
CN, HG
T1
S
2
N1
2
0
CN 1
3
A, 12
0
0
V
,
NP
T S
e
ries
N-Cha
nne
l
IGBT
Absolute Maximum Ratings
T
C
= 25
C, Unless Otherwise Specified
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at
these or any other conditions above those indicated in the operational sections of this specification is not implied.
Notes:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 3A, L = 4mH
3. V
CE(PK)
= 840V, T
J
= 125
C, R
G
= 51
.
Electrical Characteristics
T
C
= 25C unless otherwise noted
Symbol
Parameter
HGTP2N120CN
HGT1S2N120CN
Units
BV
CES
Collector to Emitter Voltage
1200
V
I
C25
I
C110
Collector Current Continuous
At T
C
= 25
C
At T
C
= 110
C
13
7
A
A
I
CM
Collector Current Pulsed (Note 1)
20
A
V
GES
Gate to Emitter Voltage Continuous
20
V
V
GEM
Gate to Emitter Voltage Pulsed
30
V
SSOA
Switching SOA Operating Area at T
J
= 150
C (Figure 2)
13A at 1200V
P
D
Power Dissipation Total at T
C
= 25
C
104
W
Power Dissipation Derating T
C
> 25
C
0.83
W/
C
E
AV
Forward Voltage Avalanche Energy (Note 2)
18
mJ
t
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to 150
C
T
L
T
PKG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, see Tech Brief 334
300
260
C
C
t
SC
Short Circuit Withstand Time (Note 3) at V
GE
= 15V
8
s
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BV
CES
Collector to Emitter Breakdown Voltage
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
BV
ECS
Emitter to Collector Breakdown Voltage
I
C
= 10mA, V
GE
= 0V
15
-
-
V
I
CES
Collector to Emitter Leakage Current
V
CE
= 1200V
T
J
= 25
C
-
-
100
A
T
J
= 125
C
-
100
-
A
T
J
= 150
C
-
-
1.0
mA
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
C
= 2.6A,
V
GE
= 15V
T
J
= 25
C
-
2.05
2.40
V
T
J
= 150
C
-
2.75
3.50
V
V
GE(TH)
Gate to Emitter Threshold Voltage
I
C
= 45
A, V
CE
= V
GE
6.4
6.7
-
V
I
GES
Gate to Emitter Leakage Current
V
GE
=
20V
-
-
250
nA
SSOA
Switching SOA
T
J
= 150
C, R
G
= 51
, V
GE
= 15V
L = 5mH, V
CE(PK)
= 1200V
13
-
-
A
V
GEP
Gate to Emitter Plateau Voltage
I
C
= 2.6A, V
CE
= 600V
-
10.2
-
V
Q
g(ON)
On-State Gate Charge
I
C
= 2.6A,
V
CE
= 600V
V
GE
= 15V
-
30
36
nC
V
GE
= 20V
-
36
43
nC
3
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HGTP2N120CN, HGT1S2N120CN Rev. C
HG
TP2
N
1
2
0
CN, HG
T1
S
2
N1
2
0
CN 1
3
A, 12
0
0
V
,
NP
T S
e
ries
N-Cha
nne
l
IGBT
Electrical Characteristics
T
C
= 25C unless otherwise noted (Continued)
Notes:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical
diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector
current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method
produces the true total Turn-Off Energy Loss.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
t
d(ON)l
Current Trun-On Delay Time
IGBT and Diode at T
J
= 25
C
I
CE
= 2.6A
V
CE
= 960V
V
GE
= 15V
R
G
= 51
L = 5mH
Test Circuit (Figure 18)
-
25
30
ns
t
rl
Current Rise Time
-
11
15
ns
t
d(OFF)l
Curent Turn-Off Delay Time
-
205
220
ns
t
fl
Current Fall Time
-
260
320
ns
E
ON1
Turn-On Energy (Note 4)
-
96
-
J
E
ON2
Turn-On Energy (Note 4)
-
425
590
J
E
OFF
Turn-Off Energy (Note 5)
-
355
390
J
t
d(ON)l
Curent Turn-On Delay Time
IGBT and Diode at T
J
= 150
C
I
CE
= 2.6A
V
CE
= 960V
V
GE
= 15V
R
G
= 51
L = 5mH
Test Circuit (Figure 18)
-
21
25
ns
t
rl
Current Rise Time
-
11
15
ns
t
d(OFF)l
Curent Turn-Off Delay Time
-
225
240
ns
t
fl
Current Fall Time
-
360
420
ns
E
ON1
Turn-On Energy (Note 4)
-
96
-
J
E
ON2
Turn-On Energy (Note 4)
-
800
1100
J
E
OFF
Turn-Off Energy (Note 5)
-
530
580
J
R
JC
Thermal Resistance Junction to Case
-
-
1.20
C/W
4
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HGTP2N120CN, HGT1S2N120CN Rev. C
HG
TP2
N
1
2
0
CN, HG
T1
S
2
N1
2
0
CN 1
3
A, 12
0
0
V
,
NP
T S
e
ries
N-Cha
nne
l
IGBT
Typical Performance Characteristics
Figure 1. DC Collector Current vs
Figure 2. Minimum Switching Safe Operating
Case Temperature
Area
Figure 3. Operating Frequency vs Collector to
Figure 4. Short Circuit Withstand Time
Emitter Currentl
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
CE
,
D
C
CO
LLECT
OR
CURREN
T (A)
50
0
25
75
100
125
150
2
10
V
GE
= 15V
12
14
8
6
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
10
0
I
CE
,
CO
LLECT
OR T
O
EM
I
TTER CURR
ENT
(A)
4
6
600
800
400
200
1000
1200
0
12
14
8
2
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 5mH
16
f
MAX
,
OPERA
TING FREQUEN
CY
(kHz)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
5
50
100
200
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 1.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
C
V
GE
12V
15V
110
o
C
110
o
C
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 5mH
1
3
4
2
IDEAL DIODE
T
C
= 75
o
C,V
GE
= 15V
T
C
V
GE
75
o
C 12V
75
o
C 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, P
E
AK SH
ORT C
I
RCU
IT C
URRENT
(A
)
t
SC
,
SHORT CI
RC
UI
T WITHST
AND TI
ME
(
s)
20
30
40
50
10
0
20
30
40
50
10
0
10
14
15
13
12
11
V
CE
= 840V, R
G
= 51
, T
J
= 125
o
C
I
SC
t
SC
0
1
2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
,
COLLECT
OR
T
O
EMI
TTER
CUR
RENT (A)
0
2
4
3
4
5
10
8
6
T
C
= 25
o
C
T
C
= 150
o
C
250
S PULSE TEST
DUTY CYCLE <0.5%, V
GE
= 12V
T
C
= -55
o
C
6
I
CE
,
COLLECT
OR
T
O
EMITTER
CU
RRENT (
A
)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2
4
6
0
1
2
3
4
5
8
0
10
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
250
s PULSE TEST
5
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HGTP2N120CN, HGT1S2N120CN Rev. C
HG
TP2
N
1
2
0
CN, HG
T1
S
2
N1
2
0
CN 1
3
A, 12
0
0
V
,
NP
T S
e
ries
N-Cha
nne
l
IGBT
Typical Performance Characteristics
(Continued)
Figure 7. Turn-On Energy Loss vs Collector to
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Emitter Current
Figure 9. Turn_On Delay Time vs Collector to
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Figure 12. Fall Time vs Collector to Emitter
Emitter Current
Current
E
ON
2
, TUR
N
-
O
N
ENER
GY LO
SS (
J)
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1000
500
2.5
1.5
3.5
3.0
2.0
1.0
4.0
4.5
5.0
2000
0
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OF
F
,
TU
RN-
O
FF ENER
GY LO
SS (
J)
3.0
2.0
1.5
2.5
3.5
1.0
300
200
400
500
4.5
4.0
600
700
800
900
5.0
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
T
URN-ON D
E
LA
Y TIME
(
n
s)
1.5
1.0
2.0
3.0
20
30
2.5
3.5
4.5
4.0
5.0
40
35
25
15
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
45
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
R
ISE TIME
(ns
)
0
10
15
40
20
2.0
1.0
30
1.5
3.5
3.0
2.5
25
5.0
4.5
4.0
35
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
5
5.0
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(O
F
F)I
,
TURN-OFF DELA
Y
TIME
(
n
s)
400
350
300
250
200
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
150
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
R
G
= 51
, L = 5mH, V
CE
= 960V
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
A
LL
TI
M
E
(ns) 500
300
700
400
600
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T
J
= 150
o
C, V
GE
= 12V OR 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
200
100
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