2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
HGT1S3N60A4DS, HGTP3N60A4D
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.
This device has been
optimized for high frequency switch mode power
supplies
.
Formerly Developmental Type TA49329.
Symbol
Features
>100kHz Operation At 390V, 3A
200kHz Operation At 390V, 2.5A
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
Low Conduction Loss
Temperature Compensating
SABERTM Model
www.Fairchildsemi.com
Packaging
JEDEC TO-263AB
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S3N60A4DS
TO-263AB
3N60A4D
HGTP3N60A4D
TO-220AB
3N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.
C
E
G
COLLECTOR
(FLANGE)
E
G
C
G
E
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
December 2001
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT1S3N60A4DS
HGTP3N60A4D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
17
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
8
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
40
A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
15A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
70
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.58
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 600V
T
J
= 25
o
C
-
-
250
A
T
J
= 125
o
C
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 3A,
V
GE
= 15V
T
J
= 25
o
C
-
2.0
2.7
V
T
J
= 125
o
C
-
1.6
2.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= 600V
4.5
6.1
7.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 50
, V
GE
= 15V,
L = 200
H, V
CE
= 600V
15
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 3A, V
CE
= 300V
-
8.8
-
V
On-State Gate Charge
Q
g(ON)
I
C
= 3A,
V
CE
= 300V
V
GE
= 15V
-
21
25
nC
V
GE
= 20V
-
26
32
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 3A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 50
,
L = 1mH,
Test Circuit (Figure 24)
-
6
-
ns
Current Rise Time
t
rI
-
11
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
73
-
ns
Current Fall Time
t
fI
-
47
-
ns
Turn-On Energy (Note 2)
E
ON1
-
37
-
J
Turn-On Energy (Note 2)
E
ON2
-
55
70
J
Turn-Off Energy (Note 3)
E
OFF
-
25
35
J
HGT1S3N60A4DS, HGTP3N60A4D
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 3A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 50
,
L = 1mH,
Test Circuit (Figure 24)
-
5.5
8
ns
Current Rise Time
t
rI
-
12
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
110
165
ns
Current Fall Time
t
fI
-
70
100
ns
Turn-On Energy (Note 2)
E
ON1
-
37
-
J
Turn-On Energy (Note 2)
E
ON2
-
90
100
J
Turn-Off Energy (Note 3)
E
OFF
-
50
80
J
Diode Forward Voltage
V
EC
I
EC
= 3A
-
2.25
-
V
Diode Reverse Recovery Time
t
rr
I
EC
= 3A, dI
EC
/dt = 200A/
s
-
29
-
ns
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
19
-
ns
Thermal Resistance Junction To Case
R
JC
IGBT
-
-
1.8
o
C/W
Diode
-
-
3.5
o
C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
,
DC COLLECT
OR CURRENT (A)
50
4
0
16
8
12
25
75
100
125
150
20
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
12
0
I
CE
,
COLLECT
O
R
T
O
EMITTER CURRENT (A)
4
300
400
200
100
500
600
0
16
20
8
T
J
= 150
o
C, R
G
= 50
, V
GE
= 15V, L = 200
H
HGT1S3N60A4DS, HGTP3N60A4D
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
f
MAX
,
OPERA
TING FREQ
UENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
300
6
2
3
600
100
5
4
200
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 1.8
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
J
= 125
o
C, R
G
= 50
, L = 1mH, V
CE
= 390V
T
C
V
GE
15V
75
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
,
PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
,
SHOR
T CIRCUIT
WITHST
AND
TIME
(
s)
10
11
12
15
4
6
14
0
24
40
56
18
13
14
8
10
12
16
8
16
32
48
20
64
V
CE
= 390V, R
G
= 50
, T
J
= 125
o
C
t
SC
I
SC
0
2
3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
0
4
8
4
5
16
12
20
1
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
GE
= 12V
I
CE
,
COLLECT
O
R
T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
4
8
16
12
20
0
2
3
4
1
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
s
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
E
ON2
,
TURN-ON
ENERGY LOSS (
J)
160
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
120
40
200
3
2
4
5
6
0
1
240
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
120
E
OFF
,
TURN-OFF
ENERGY LOSS (
J)
0
20
80
40
100
140
60
3
2
4
5
6
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
HGT1S3N60A4DS, HGTP3N60A4D
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
,
TURN-ON DELA
Y
TIME
(ns)
0
12
16
2
1
3
4
5
6
8
4
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
4
8
20
16
12
24
32
28
3
2
4
5
6
1
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 12V
64
48
56
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
,
TURN-OFF
DELA
Y TIME
(ns)
112
80
96
72
2
1
3
4
5
6
88
104
R
G
= 50
, L = 1mH, V
CE
= 390V
V
GE
= 12V, T
J
= 25
o
C
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 15V, T
J
= 125
o
C
V
GE
= 12V, T
J
= 125
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,
F
ALL
TIME
(ns)
48
40
64
80
56
72
88
96
2
1
3
4
5
6
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
0
8
12
4
6
8
10
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
12
16
20
4
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
V
GE
,
GA
TE
T
O
EMITTER
V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
2
14
0
4
10
6
8
12
16
4
8
12
16
24
20
28
0
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
I
G(REF)
= 1mA, R
L
= 100
, T
J
= 25
o
C
HGT1S3N60A4DS, HGTP3N60A4D
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
50
100
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
125
25
150
250
200
E
TOT
A
L
,
T
O
T
A
L SWITCHING ENERGY LOSS (
J)
I
CE
= 4.5A
I
CE
= 3A
I
CE
= 1.5A
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 50
, L = 1mH, V
CE
= 390V, V
GE
= 15V
30
10
100
R
G
, GATE RESISTANCE (
)
100
3
1000
E
TOT
A
L
,
T
O
T
AL SWITCHING ENERGY LOSS (
J)
1000
I
CE
= 4.5A
I
CE
= 3A
I
CE
= 1.5A
T
J
= 125
o
C, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C,
CAP
A
CIT
ANCE (pF)
0
20
40
60
80
100
0
200
400
500
700
300
600
100
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
2.0
10
12
2.1
2.4
2.2
14
16
2.6
2.7
V
CE
,
COLLECT
OR
T
O
EMITTER
V
O
L
T
A
G
E (V)
2.3
2.5
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
s
I
CE
= 4.5A
I
CE
= 1.5A
I
CE
= 3A
1
2
4
5
I
EC
,
FOR
W
ARD CURRENT (A)
V
EC
, FORWARD VOLTAGE (V)
0
3
0
8
12
16
20
4
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%,
25
o
C
125
o
C
48
32
16
0
t
rr
,
RECO
VER
Y
TIMES
(ns)
I
EC
, FORWARD CURRENT (A)
1
64
40
24
8
2
3
5
6
56
4
125
o
C trr
dI
EC
/dt = 200A/
s
25
o
C trr
25
o
C ta
25
o
C tb
125
o
C ta
125
o
C tb
HGT1S3N60A4DS, HGTP3N60A4D
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
400
800
t
rr
,
RECO
VER
Y
TIMES
(ns)
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
s)
200
600
6
22
10
14
18
26
1000
125
o
C ta
125
o
C tb
25
o
C ta
25
o
C tb
I
EC
= 3A, V
CE
= 390V
160
80
40
0
Qrr
,
REVERSE RECO
VER
Y CHARGE (nc)
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
s)
1000
200
400
200
600
800
120
125
o
C, I
EC
= 3A
125
o
C, I
EC
= 1.5A
25
o
C, I
EC
= 20A
25
o
C, I
EC
= 10A
V
CE
= 390V
t
1
, RECTANGULAR PULSE DURATION (s)
Z
JC
,
NORMALIZED THERMAL
RESPONSE
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
R
G
= 50
L = 1mH
V
DD
= 390V
+
-
HGTP3N60A4D
DUT
DIODE TA49369
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
I
CE
E
OFF
E
0N2
HGT1S3N60A4DS, HGTP3N60A4D
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler's body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as "ECCOSORBDTM LD26" or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V
GEM
. Exceeding the rated V
GE
can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
CE
) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
MAX1
or f
MAX2
; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t
d(ON)I
are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JM
. t
d(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON2
). The
allowable dissipation (P
D
) is defined by P
D
= (T
JM
- T
C
)/R
JC
.
The sum of device switching and conduction losses must not
exceed P
D
. A 50% duty factor was used (Figure 3) and the
conduction losses (P
C
) are approximated by:
P
C
= (V
CE
x I
CE
)/2.
E
ON2
and E
OFF
are defined in the switching waveforms
shown in Figure 25. E
ON2
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-on and E
OFF
is the
integral of the instantaneous power loss (I
CE
x V
CE
) during
turn-off. All tail losses are included in the calculation for
E
OFF
; i.e., the collector current equals zero (I
CE
= 0).
HGT1S3N60A4DS, HGTP3N60A4D
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGICTM
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
SILENT SWITCHER
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
Rev. H4
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DenseTrenchTM
DOMETM
EcoSPARKTM
E
2
CMOS
TM
EnSigna
TM
FACTTM
FACT Quiet SeriesTM
SMART STARTTM
STAR*POWERTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
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UHCTM
UltraFET
STAR*POWER is used under license
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