2001 Fairchild Semiconductor Corporation
HGTD3N60C3S, HGTP3N60C3 Rev. B
HGTD3N60C3S, HGTP3N60C3
6A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
o
C
and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49113.
Symbol
Features
6A, 600V at T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 130ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Packaging
JEDEC TO-252AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60C3S
TO-252AA
G3N60C
HGTP3N60C3
TO-220AB
G3N60C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.,
HGTD3N60C3S9A.
C
E
G
E
G
COLLECTOR
(FLANGE)
E
C
G
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
December 2001
2001 Fairchild Semiconductor Corporation
HGTD3N60C3S, HGTP3N60C3 Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
6
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
3
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
24
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
18A at 480V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
33
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.27
W/
o
C
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 82
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 3mA, V
GE
= 0V
16
30
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 150
o
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.65
2.0
V
T
C
= 150
o
C
-
1.85
2.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
T
C
= 25
o
C
3.0
5.5
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
25V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C,
R
G
= 82
,
V
GE
= 15V, L = 1mH
V
CE(PK)
= 480V
18
-
-
A
V
CE(PK)
= 600V
2
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8.3
-
V
On-State Gate Charge
Q
g(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
10.8
13.5
nC
V
GE
= 20V
-
13.8
17.3
nC
Current Turn-On Delay Time
t
d(ON)I
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 1mH
Test Circuit (Figure 18)
-
5
-
ns
Current Rise Time
t
rI
-
10
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
325
400
ns
Current Fall Time
t
fI
-
130
275
ns
Turn-On Energy
E
ON
-
85
-
J
Turn-Off Energy (Note 3)
E
OFF
-
245
-
J
Thermal Resistance
R
JC
-
-
3.75
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTP3N60C3 and HGTD3N60C3S were tested per JEDEC standard No.
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-
On losses include diode losses.
HGTD3N60C3S, HGTP3N60C3
2001 Fairchild Semiconductor Corporation
HGTD3N60C3S, HGTP3N60C3 Rev. B
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
8
10
12
0
2
4
8
10
12
14
14
6
16
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
18
20
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
2
4
6
8
10
12V
V
GE
= 15V
0
2
4
8
10
12
14
6
16
18
20
10V
8.0V
9.0V
8.5V
7.5V
7.0V
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= -40
o
C
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
T
C
= -40
o
C
25
50
75
100
125
150
0
1
2
3
4
5
I
CE
,
DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
7
6
I
SC
,
PEAK SHOR
T CIRCUIT CURRENT (A)
0
20
30
50
t
SC
,
SHOR
T CIRCUIT
WITHST
AND
TIME
(
S)
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
60
40
10
I
SC
t
SC
0
4
10
14
V
CE
= 360V, R
G
= 82
, T
J
= 125
o
C
2
6
8
12
70
HGTD3N60C3S, HGTP3N60C3
2001 Fairchild Semiconductor Corporation
HGTD3N60C3S, HGTP3N60C3 Rev. B
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d(ON)I
,
TURN-ON
DELA
Y TIME
(ns)
3
1
2
3
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
5
6
10
V
GE
= 15V
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
,
TURN-OFF
DELA
Y TIME
(ns)
500
400
300
200
V
GE
= 10V
V
GE
= 15V
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
TURN-ON RISE
TIME
(ns)
5
10
80
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,
F
ALL TIME
(ns)
V
GE
= 10V OR 15V
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
300
200
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
E
ON
,
TURN-ON
ENERGY
LOSS
(mJ)
0.1
0.2
0.3
0.4
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.5
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
,
TURN-OFF
ENERGY
LOSS
(mJ)
0.1
0.2
0.3
0.4
0.5
0.6
0
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.8
0.7
V
GE
= 10V or 15V
HGTD3N60C3S, HGTP3N60C3
2001 Fairchild Semiconductor Corporation
HGTD3N60C3S, HGTP3N60C3 Rev. B
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
MAX
,
OPERA
TING FREQ
UENCY (kHz)
1
2
4
6
100
200
10
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
(DUTY FACTOR = 50%)
R
JC
=
3.75
o
C/W
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 82
, L = 1mH
V
GE
= 10V
V
GE
= 15V
5
3
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
0
100
200
300
400
500
600
0
2
4
6
8
T
J
= 150
o
C, V
GE
= 15V, R
G
= 82
, L = 1mH
10
12
14
16
18
20
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
100
200
300
400
500
C,
CAP
A
CIT
ANCE (pF)
C
IES
FREQUENCY = 1MHz
C
OES
C
RES
V
GE
,
GA
TE
T
O
EMITTER
V
O
L
T
A
GE (V)
V
CE
,
COLLECT
OR
T
O
EMITTER
V
O
L
T
A
GE (V)
Q
g
, GATE CHARGE (nC)
0
240
120
360
480
600
15
12
9
6
3
0
V
CE
= 400V
2
4
6
8
10
12
14
V
CE
= 200V
V
CE
= 600V
0
I
G
REF = 1.060mA,
R
L
= 200
, T
C
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
JC
,
NORMALIZED THERMAL
RESPONSE
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.05
0.2
0.1
0.02
0.01
HGTD3N60C3S, HGTP3N60C3
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