2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
HGTG30N60B3D, HGT4E30N60B3DS
60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D, and HGT4E30N60B3DS are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C. The IGBT used is the development type
TA49170. The diode used in anti-parallel with the IGBT is the
development type TA49053.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
Features
60A, 600V, T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . . 90ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
TO-268AA
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60B3D
TO-247
G30N60B3D
HGT4E30N60B3DS
TO-268AA
G30N60B3D
NOTE: When ordering, use the entire part number.
G
E
C
G
C
E
C
E
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
December 2001
2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG30N60B3D,
HGT4E30N60B3DS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
60
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
30
A
Average Diode Forward Current at 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
EC(AVG)
25
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
220
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
60A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
208
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
4
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
10
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 3
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 150
o
C
-
-
3
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.45
1.9
V
T
C
= 150
o
C
-
1.7
2.1
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
4.2
5
6
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 3
,
V
GE
= 15V, L = 100
H
V
CE (PK)
= 480V
200
-
-
A
V
CE (PK)
= 600V
60
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.2
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
170
190
nC
V
GE
= 20V
-
230
250
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C ,
I
CE
= I
C110
,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 3
,
L = 1mH ,
Test Circuit (Figure 19)
-
36
-
ns
Current Rise Time
t
rI
-
25
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
137
-
ns
Current Fall Time
t
fI
-
58
-
ns
Turn-On Energy
E
ON
-
550
800
J
Turn-Off Energy (Note 3)
E
OFF
-
680
900
J
HGTG30N60B3D, HGT4E30N60B3DS
2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C ,
I
CE
= I
C110
,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 3
,
L = 1mH ,
Test Circuit (Figure 19)
-
32
-
ns
Current Rise Time
t
rI
-
24
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
275
320
ns
Current Fall Time
t
fI
-
90
150
ns
Turn-On Energy
E
ON
-
1300
1550
J
Turn-Off Energy (Note 3)
E
OFF
-
1600
1900
J
Diode Forward Voltage
V
EC
I
EC
= 30A
-
1.95
2.5
V
Diode Reverse Recovery Time
t
rr
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
32
40
ns
I
EC
= 30A, dI
EC
/dt = 200A/
s
-
45
55
ns
Thermal Resistance Junction To Case
R
JC
IGBT
-
-
0.6
o
C/W
Diode
-
-
1.3
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
,
D
C
C
O
L
L
E
CT
O
R
CURRE
NT
(
A
)
50
10
0
40
20
30
50
60
V
GE
= 15V
25
75
100
125
150
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
125
700
75
0
I
CE
,
C
O
L
L
E
CT
O
R
T
O
E
M
IT
T
E
R
CURRE
NT
(
A
)
25
50
300
400
200
100
500
600
100
0
150
175
200
225
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
H
HGTG30N60B3D, HGT4E30N60B3DS
2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
f
MAX
,
O
P
E
RA
T
I
NG
F
R
E
Q
UE
NCY
(
k
Hz
)
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
0.1
10
60
20
40
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.6
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
T
C
V
GE
110
o
C
10V
15V
15V
75
o
C
110
o
C
75
o
C
10V
10
T
J
= 150
o
C, R
G
= 3
, L = 1mH,
V
CE
= 480V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
,
P
E
A
K
S
HO
RT
CIRCUIT
CURRE
NT
(
A
)
t
SC
,
S
HO
RT
CIRCUIT
W
IT
HS
T
AND
T
I
M
E
(
s)
10
11
12
13
14
15
6
8
10
12
16
20
14
150
200
250
300
350
400
500
t
SC
I
SC
18
450
V
CE
= 360V, R
G
= 3
, T
J
= 125
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
,
C
O
L
L
E
CT
O
R
T
O
E
M
IT
T
E
R
CURRE
NT
(
A
)
0
25
50
75
6
8
10
150
125
100
175
T
C
= -55
o
C
T
C
= 150
o
C
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 10V
225
200
T
C
= 25
o
C
I
CE
,
C
O
L
L
E
CT
O
R
T
O
E
M
IT
T
E
R
CURRE
NT
(
A
)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
200
250
300
350
0
1
2
0
150
3
4
5
100
50
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
6
7
E
ON
,
T
URN-
O
N
E
N
E
R
G
Y
L
O
S
S
(
m
J
)
5
3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
4
2
1
40
20
60
50
30
10
6
0
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
R
G
= 3
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OF
F
,
T
URN-
O
F
F
E
NE
RG
Y
L
O
S
S
(
m
J
)
0
0.5
50
30
20
40
60
10
1.0
2.5
R
G
= 3
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V OR 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
2.0
1.5
3.0
3.5
4.0
4.5
HGTG30N60B3D, HGT4E30N60B3DS
2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
T
URN-
O
N
DE
L
A
Y
T
IM
E
(
n
s
)
20
10
30
50
25
30
35
40
45
50
40
55
60
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
R
IS
E
T
IME
(
n
s
)
20
0
50
250
200
100
60
10
150
50
40
30
R
G
= 3
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20
30
60
10
250
300
50
40
100
200
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(
O
FF)
I
,
T
URN-
O
F
F
D
E
L
A
Y
T
I
M
E
(
n
s
)
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 3
, L = 1mH,
V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,F
A
L
L
T
I
M
E
(
n
s
)
20
30
60
10
40
100
120
50
40
60
80
T
J
= 150
o
C, V
GE
= 10V AND 15V
T
J
= 25
o
C, V
GE
= 10V AND 15V
R
G
= 3
, L = 1mH, V
CE
= 480V
I
CE
,
C
O
L
L
E
CT
O
R
T
O
E
M
IT
T
E
R
CURRE
NT
(
A
)
0
50
100
150
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
200
250
300
4
T
C
= 150
o
C
T
C
= 25
o
C
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= -55
o
C
Q
G
, GATE CHARGE (nC)
0
8
10
6
4
2
0
50
V
GE
,
G
A
T
E
T
O
E
M
I
T
T
E
R
VO
L
T
A
G
E
(
V)
V
CE
= 400V
V
CE
= 600V
150
200
100
12
14
16
V
CE
= 200V
I
g (REF)
= 1mA, R
L
= 10
, T
C
= 25
o
C
HGTG30N60B3D, HGT4E30N60B3DS
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