2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4,
HGT1S12N60A4S9A
600V, SMPS Series N-Channel IGBTs
The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S9A are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49335.
Symbol
Features
>100kHz Operation at 390V, 12A
200kHz Operation at 390V, 9A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
Low Conduction Loss
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC TO-263AB
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60A4
TO-220AB
12N60A4
HGTG12N60A4
TO-247
12N60A4
HGT1S12N60A4S9A
TO-263AB
12N60A4
NOTE: When ordering, use the entire part number.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
COLLECTOR
(BOTTOM SIDE METAL)
C
E
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
August 2003
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG12N60A4, HGTP12N60A4,
HGT1S12N60A4S9A
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
54
A
At T
C
= 110
o
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110
23
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
96
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
60A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
167
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.33
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= -10mA, V
GE
= 0V
20
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 600V
T
J
= 25
o
C
-
-
250
A
T
J
= 125
o
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 12A,
V
GE
= 15V
T
J
= 25
o
C
-
2.0
2.7
V
T
J
= 125
o
C
-
1.6
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= 600V
-
5.6
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 10
,
V
GE
= 15V
L = 100
H, V
CE
= 600V
60
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 12A, V
CE
= 300V
-
8
-
V
On-State Gate Charge
Q
g(ON)
I
C
= 12A,
V
CE
= 300V
V
GE
= 15V
-
78
96
nC
V
GE
= 20V
-
97
120
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 12A
V
CE
= 390V
V
GE
=15V
R
G
= 10
L = 500
H
Test Circuit (Figure 20)
-
17
-
ns
Current Rise Time
t
rI
-
8
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
96
-
ns
Current Fall Time
t
fI
-
18
-
ns
Turn-On Energy (Note 3)
E
ON1
-
55
-
J
Turn-On Energy (Note 3)
E
ON2
-
160
-
J
Turn-Off Energy (Note 2)
E
OFF
-
50
-
J
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C
I
CE
= 12A
V
CE
= 390V
V
GE
= 15V
R
G
= 10
L = 500
H
Test Circuit (Figure 20)
-
17
-
ns
Current Rise Time
t
rI
-
16
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
110
170
ns
Current Fall Time
t
fI
-
70
95
ns
Turn-On Energy (Note 3)
E
ON1
-
55
-
J
Turn-On Energy (Note 3)
E
ON2
-
250
350
J
Turn-Off Energy (Note 2)
E
OFF
-
175
285
J
Thermal Resistance Junction To Case
R
JC
-
-
0.75
o
C/W
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
C
, CASE TEMPERATURE (
o
C)
I
CE
,
DC COL
L
ECT
O
R CURRENT
(
A
)
50
10
0
40
20
30
25
75
100
125
150
60
50
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
40
0
I
CE
, COL
L
E
CT
OR T
O
EM
I
T
T
E
R CURRENT
(
A
)
10
20
300
400
200
100
500
600
0
50
60
30
70
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 200
H
T
C
V
GE
15V
75
o
C
f
MAX
, O
P
E
R
A
T
ING F
R
E
Q
UE
NCY
(kH
z
)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
3
300
30
10
20
500
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.75
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
J
= 125
o
C, R
G
= 10
, L = 500
H, V
CE
= 390V
100
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T
CIRCUI
T
CURR
E
N
T
(
A
)
t
SC
,
SHOR
T
CIRCUIT
WIT
H
ST
AND T
I
M
E
(
s)
9
10
11
12
15
0
2
10
16
50
125
175
300
t
SC
I
SC
20
250
13
14
4
6
8
12
14
18
75
100
150
200
225
275
V
CE
= 390V, R
G
= 10
, T
J
= 125
o
C
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
0.5
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
,
COL
L
ECT
O
R T
O
EM
IT
T
E
R
CURRENT
(
A
)
0
4
8
1.5
2
2.5
16
20
12
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
GE
= 12V
24
T
J
= 25
o
C
I
CE
, COL
L
ECT
O
R T
O
EM
IT
T
E
R
CURRENT
(
A
)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
s
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
0.5
1.0
1.5
2
2.5
4
8
16
12
20
24
0
E
ON
2
,
T
URN-
ON ENERGY L
O
SS (
J)
500
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
400
200
600
0
700
6
4
10
12
14
16
8
18
20
22
24
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 10
, L = 500
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
100
2
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
,
TURN-
O
FF
E
N
E
R
GY
LO
S
S
(
J)
0
50
200
100
250
350
400
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
150
6
4
2
10
12
14
16
8
18
20
22
24
R
G
= 10
, L = 500
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(
O
N
)
I
,
T
URN-
ON DEL
A
Y
T
I
M
E
(
n
s
)
10
11
12
13
14
15
6
4
2
10
12
14
16
8
18
20
22
24
16
17
18
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
R
G
= 10
, L = 500
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
R
IS
E
TI
ME
(n
s)
0
4
16
12
8
6
4
2
10
12
14
16
8
18
20
22
24
20
32
28
24
R
G
= 10
, L = 500
H, V
CE
= 390V
T
J
= 125
o
C, OR T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified (Continued)
4
8
2
95
6
85
90
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(
O
FF)
I
, T
URN-
OF
F
DEL
A
Y T
I
M
E
(
n
s
)
12
115
16
14
105
110
10
100
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 10
, L = 500
H, V
CE
= 390V
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
A
L
L
T
I
M
E
(n
s)
10
30
20
50
70
40
60
R
G
= 10
, L = 500
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
4
8
2
6
12
16
14
10
18
20
22
24
80
90
I
CE
,
COL
L
ECT
O
R T
O
EM
IT
T
E
R
CURRENT
(
A
)
0
50
100
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
14
15
250
6
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
CE
= 10V
16
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
V
GE
,
GA
T
E
T
O
E
M
I
T
T
E
R V
O
L
T
A
G
E
(
V
)
Q
G
, GATE CHARGE (nC)
2
14
0
4
10
I
G(REF)
= 1mA, R
L
= 25
, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
6
8
12
16
V
CE
= 600V
10
20
30
40
60
50
70
80
0
I
CE
= 24A
I
CE
= 12A
I
CE
= 6A
0
0.2
0.4
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
0.6
1.0
125
25
150
1.2
0.8
E
TO
T
A
L
,
T
O
T
A
L SWI
T
CHI
NG
ENERG
Y
LO
SS (
m
J
)
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 10
, L = 500
H, V
CE
= 390V, V
GE
= 15V
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
5
1000
E
TO
T
A
L
,
T
O
T
A
L
S
W
IT
C
H
ING E
N
E
R
G
Y
L
O
S
S
(mJ
)
I
CE
= 12A
I
CE
= 24A
I
CE
= 6A
10
T
J
= 125
o
C, L = 500
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
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