2001 Fairchild Semiconductor Corporation
HUF76445P3, HUF76445S3S Rev. B
HUF76445P3, HUF76445S3S
75A, 60V, 0.0075 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.0065
,
V
GS
=
10V
- r
DS(ON)
= 0.0075
,
V
GS
=
5V
Simulation Models
- Temperature Compensated PSPICE and SABERTM
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
HUF76445P3
GATE
SOURCE
DRAIN
(FLANGE)
HUF76445S3S
D
G
S
PART NUMBER
PACKAGE
BRAND
HUF76445P3
TO-220AB
76445P
HUF76445S3S
TO-263AB
76445S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76445S3ST.
HUF76445P3, HUF76445S3S
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
16
V
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
75
75
75
75
Figure 4
A
A
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
310
2.08
W
W/
o
C
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
December 2001
2001 Fairchild Semiconductor Corporation
HUF76445P3, HUF76445S3S Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 12)
60
-
-
V
I
D
= 250
A, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55V, V
GS
= 0V
-
-
1
A
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
16V
-
-
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 11)
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 75A, V
GS
= 10V (Figures 9, 10)
-
0.0054
0.0065
I
D
= 75A, V
GS
= 5V (Figure 9)
-
0.0063
0.0075
I
D
= 75A, V
GS
= 4.5V (Figure 9)
-
0.0066
0.008
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
JC
TO-220 and TO-263
-
-
0.48
o
C/W
Thermal Resistance Junction to
Ambient
R
JA
-
-
62
o
C/W
SWITCHING SPECIFICATIONS (V
GS
= 4.5V)
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 75A
V
GS
=
4.5V, R
GS
= 2.2
(Figures 15, 21, 22)
-
-
515
ns
Turn-On Delay Time
t
d(ON)
-
18
-
ns
Rise Time
t
r
-
325
-
ns
Turn-Off Delay Time
t
d(OFF)
-
39
-
ns
Fall Time
t
f
-
135
-
ns
Turn-Off Time
t
OFF
-
-
260
ns
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 75A
V
GS
=
10V,
R
GS
= 2.4
(Figures 16, 21, 22)
-
-
205
ns
Turn-On Delay Time
t
d(ON)
-
12
-
ns
Rise Time
t
r
-
126
-
ns
Turn-Off Delay Time
t
d(OFF)
-
62
-
ns
Fall Time
t
f
-
135 -
ns
Turn-Off Time
t
OFF
-
-
295
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 30V,
I
D
= 75A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
124
150
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
68
81
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
5
6
nC
Gate to Source Gate Charge
Q
gs
-
14
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
30
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
4965
-
pF
Output Capacitance
C
OSS
-
1250
-
pF
Reverse Transfer Capacitance
C
RSS
-
150
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 75A
-
-
1.25
V
I
SD
= 35A
-
-
1.00
V
Reverse Recovery Time
t
rr
I
SD
= 75A, dI
SD
/dt = 100A/
s
-
-
100
ns
Reverse Recovered Charge
Q
RR
I
SD
= 75A, dI
SD
/dt = 100A/
s
-
-
260
nC
HUF76445P3, HUF76445S3S
2001 Fairchild Semiconductor Corporation
HUF76445P3, HUF76445S3S Rev. B
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WE
R DI
SSI
P
A
T
I
O
N
M
U
L
T
I
P
LI
ER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
40
60
80
50
75
100
125
150
0
25
I
D
, D
RAIN CURRENT
(
A
)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
175
V
GS
= 4.5V
0.1
1
2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
10
-5
t, RECTANGULAR PULSE DURATION (s)
Z
JC
, NO
RM
AL
IZ
ED
T
H
ERM
A
L
IM
PED
ANCE
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
100
2000
50
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
I
DM
, PEAK CURRENT
(
A
)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
1000
V
GS
= 5V
HUF76445P3, HUF76445S3S
2001 Fairchild Semiconductor Corporation
HUF76445P3, HUF76445S3S Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED
DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
10
100
1000
1
1
100
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN
CURRENT
(
A
)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
10
100
1000
0.01
0.1
1
10
I
AS
, A
V
AL
ANCHE CUR
RE
NT
(
A
)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
30
60
90
120
150
1.5
2
2.5
3.5
4
I
D,
DRA
IN CURRENT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
3
30
60
90
120
150
0
1
2
3
4
0
I
D
,
DRAIN CU
RRE
N
T
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 5V
V
GS
= 10V
V
GS
= 4V
I
D
= 20A
5
10
15
20
25
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 75A
r
DS
(
O
N)
, DRAI
N T
O
S
O
URCE
O
N
RESIST
ANCE (
m
)
I
D
= 35A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
200
NO
RM
AL
IZ
ED
DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
O
N
RESI
ST
A
NCE
V
GS
= 10V, I
D
= 75A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
160
HUF76445P3, HUF76445S3S
2001 Fairchild Semiconductor Corporation
HUF76445P3, HUF76445S3S Rev. B
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO
SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.4
0.8
1.0
1.2
-80
-40
0
40
80
120
200
NORM
AL
IZ
ED G
A
T
E
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
T
HRESHOL
D V
O
L
T
A
G
E
0.6
160
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORM
AL
IZ
ED DRAIN
T
O
SO
URCE
BREAKDO
WN V
O
L
T
A
G
E
I
D
= 250
A
160
160
100
1000
10000
0.1
1.0
10
60
C, CAP
A
C
I
T
ANCE
(
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
30
60
90
120
150
V
GS
,
GA
T
E
T
O
S
O
UR
CE
V
O
L
T
A
G
E
(V
)
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 75A
I
D
= 35A
WAVEFORMS IN
DESCENDING ORDER:
400
800
1000
1200
0
10
20
30
40
50
0
SWIT
CHING T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 30V, I
D
= 75A
t
d(OFF)
t
r
t
f
t
d(ON)
200
600
200
400
600
800
0
10
20
30
40
50
0
S
W
I
T
CHIN
G
T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 30V, I
D
= 75A
t
d(OFF)
t
r
t
d(ON)
t
f
HUF76445P3, HUF76445S3S
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