Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 Operating Temperature
Lower Leakage Current : 10 A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.041 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
JC
R
CS
R
JA
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 )
Continuous Drain Current (T
C
=100 )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25 )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
Characteristic
Value
Units
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
V
DSS
V
TO-220
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
2
O
3
C
C
O
1
O
1
C
C
C
C
C
IRF540A
BV
DSS
= 100 V
R
DS(on)
= 0.052
I
D
= 28 A
100
28
19.8
110
523
28
10.7
6.5
107
0.71
- 55 to +175
300
1.4
--
62.5
--
0.5
--
2
0
+
_
1999 Fairchild Semiconductor Corporation
Rev. B
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25 unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain("Miller") Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
BV/ T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V
V
nA
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250 A
I
D
=250 A See Fig 7
V
DS
=5V,I
D
=250 A
V
GS
=20V
V
GS
=-20V
V
DS
=100V
V
DS
=80V,T
C
=150
V
GS
=10V,I
D
=14A
V
DS
=40V,I
D
=14A
V
DD
=50V,I
D
=28A,
R
G
=9.1
See Fig 13
V
DS
=80V,V
GS
=10V,
I
D
=28A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
C
Integral reverse pn-diode
in the MOSFET
T
J
=25 ,I
S
=28A,V
GS
=0V
T
J
=25 ,I
F
=28A
di
F
/dt=100A/ s
C
O
4
O
5
C
C
O
4
O
4
O
4
O
4
O
1
C
C
O
5
O
4
IRF540A
100
--
2.0
--
--
--
--
--
0.11
--
--
--
--
--
325
148
18
18
90
56
60
10.8
27.9
--
--
4.0
100
-100
10
100
0.052
--
1710
380
170
50
50
180
120
78
--
--
22.56
1320
--
--
--
132
0.63
28
110
1.5
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=1mH, I
AS
=28A, V
DD
=25V, R
G
=27 , Starting T
J
=25
I
SD
28A, di/dt
4
00A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
1
O
2
O
3
O
4
O
5
o
C
o
C
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
IRF540A
10
-1
10
0
10
1
10
0
10
1
10
2
@ Notes :
1. 250
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
0
10
1
10
2
25
o
C
175
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 40 V
3. 250
s Pulse Test
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
0
30
60
90
120
0.00
0.02
0.04
0.06
0.08
@ Note : T
J
= 25
o
C
V
GS
= 20 V
V
GS
= 10 V
R
DS(on)
, [
]
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
10
0
10
1
10
2
175
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
s Pulse Test
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
500
1000
1500
2000
2500
C
iss
= C
gs
+ C
gd
( C
ds
= shorted )
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
70
0
5
10
V
DS
= 80 V
V
DS
= 50 V
V
DS
= 20 V
@ Notes : I
D
=28.0 A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case Temperature
Fig 9. Max. Safe Operating Area
P
DM
t
1
t
2
IRF540A
-75
-50
-25
0
25
50
75
100
125
150
175
200
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-75
-50
-25
0
25
50
75
100
125
150
175
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. V
GS
= 10 V
2. I
D
= 14.0 A
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
10
s
DC
100
s
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
10
- 2
10
- 1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
J C
(t)=1.4
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
C
=P
D M
*Z
J C
(t)
Z
JC
(t) , Thermal Response
t
1
, Square Wave Pulse Duration [sec]
25
50
75
100
125
150
175
0
5
10
15
20
25
30
I
D
, Drain Current [A]
T
c
, Case Temperature [
o
C]
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
E
AS
=
L
L
I
AS
2
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
V
in
V
out
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
Vary t
p
to obtain
required peak I
D
10V
V
DD
C
L
L
V
DS
I
D
R
G
t
p
DUT
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
V
DD
( 0.5 rated V
DS
)
10V
V
out
V
in
R
L
DUT
R
G
3mA
V
GS
Current Sampling (I
G
)
Resistor
Current Sampling (I
D
)
Resistor
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
" Current Regulator "
R
1
R
2
IRF540A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
--
L
I
S
Driver
V
GS
R
G
Same Type
as DUT
V
GS
dv/dt controlled by "R
G
"
I
S
controlled by Duty Factor "D"
V
DD
10V
V
GS
( Driver )
I
S
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
f
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
IRF540A
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrenchTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
TinyLogicTM
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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