IRFP440 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
2002 Fairchild Semiconductor Corporation
IRFP440 Rev. B
IRFP440
8.8A, 500V, 0.850 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17425.
Features
8.8A, 500V
r
DS(ON)
= 0.850
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP440
TO-247
IRFP440
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
Data Sheet
January 2002
2002 Fairchild Semiconductor Corporation
IRFP440 Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFP440
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
500
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
500
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
8.8
A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
5.6
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
35
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
480
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A (Figure 10)
500
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
-
-
250
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
8.8
-
-
A
Gate to Source Leakage
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 4.9A (Figures 8, 9)
-
0.800
0.850
Forward Transconductance (Note 2)
g
fs
V
DS
50V, I
D
= 4.9A (Figure 12)
5.3
8.2
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 250V, I
D
8A, R
GS
= 9.1
, R
L
= 30.1
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
17
21
ns
Rise Time
t
r
-
23
35
ns
Turn-Off Delay Time
t
d(OFF)
-
42
74
ns
Fall Time
t
f
-
18
30
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g
V
GS
= 10V, I
D
= 8A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
-
42
63
nC
Gate to Source Charge
Q
gs
-
7
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
22
-
nC
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
1225
-
pF
Output Capacitance
C
OSS
-
200
-
pF
Reverse-Transfer Capacitance
C
RSS
-
85
-
pF
Internal Drain Inductance
L
D
Measured from the drain
Lead, 6mm (0.25in) from
the Package to the
Center of the Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the
Source Lead, 6mm
(0.25in) from Header to
the Source Bonding Pad
-
12.5
-
nH
Junction to Case
R
JC
-
-
0.83
oC/W
Junction to Ambient
R
JA
Free Air Operation
-
-
30
oC/W
L
S
L
D
G
D
S
IRFP440
2002 Fairchild Semiconductor Corporation
IRFP440 Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
-
-
8.8
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
35
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 8.8A, V
GS
= 0V (Figure 13)
-
-
1.8
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 8.0A, dI
SD
/dt = 100A/
s
210
460
970
ns
Reverse Recovered Charge
Q
RR
T
J
= 25
o
C, I
SD
= 8.0A, dI
SD
/dt = 100A/
s
2
4.2
8.9
C
NOTES:
2. Pulse test: pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 11mH, R
G
= 50
, peak I
AS
= 8.8A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
50
75
100
25
150
10
8
6
0
4
I
D,
DRAIN CURRENT (A)
2
125
1
0.1
10
-2
10
-2
10
-5
10
-4
10
-3
0.1
1
10
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
DUTY FACTOR: D = t
1
/t
2
t
2
P
DM
t
1
NOTES:
t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
SINGLE PULSE
Z
JC
,
THERMAL
IMPED
ANCE
0.5
0.1
0.2
0.05
0.02
0.01
IRFP440
2002 Fairchild Semiconductor Corporation
IRFP440 Rev. B
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
10
1
10
10
2
0.1
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
3
10
2
1
10
s
100
s
1ms
10ms
DC
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
OPERATION IN THIS
REGION IS LIMITED BY r
DS(ON)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
100
150
200
0
250
15
12
9
0
6
I
D
,
DRAIN CURRENT (A)
V
GS
= 6.0V
V
GS
= 5.5V
V
GS
= 5.0V
PULSE DURATION = 80
s
3
V
GS
= 10V
V
GS
= 4.0V
V
GS
= 4.5V
DUTY CYCLE = 0.5% MAX
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3
6
9
12
0
15
15
12
9
0
6
I
D
,
DRAIN CURRENT (A)
3
V
GS
= 10V
V
GS
= 6.0V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 5.5V
V
GS
= 5.0V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
I
D(ON)
,
ON ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
2
10
1
0
2
4
6
8
10
T
J
= 150
o
C
T
J
= 25
o
C
0.1
10
-2
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
32
I
D
, DRAIN CURRENT (A)
8
16
24
0
40
10
8
5
0
4
r
DS(ON),
DRAIN
T
O
SOURCE
V
GS
= 20V
2
V
GS
= 10V
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
3.0
1.8
0.6
80
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN
T
O
SOURCE
2.4
1.2
0
60
120
ON RESIST
ANCE
V
O
L
T
A
GE
-20
-40
20
40
100
140 160
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
I
D
= 4.9A, V
GS
= 10V
IRFP440
2002 Fairchild Semiconductor Corporation
IRFP440 Rev. B
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
1.25
1.05
0.85
60
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN
T
O
SOURCE
1.15
0.95
0.75
-20
20
100
BREAKDO
WN V
O
L
T
A
GE
0
-40
40
80
120 140
I
D
= 250
A
160
1
2
10
20
50
100
C,
CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3000
2400
1800
1200
600
0
5
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
I
D
, DRAIN CURRENT (A)
3
6
9
12
0
15
15
12
9
0
6
g
fs
,
TRANSCONDUCT
ANCE
(S)
3
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
I
SD
,
SOURCE
T
O
DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
1
0.1
0
0.3
0.6
0.9
1.2
1.5
T
J
= 25
o
C
T
J
= 150
o
C
10
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
Q
g
, GATE CHARGE (nC)
12
24
36
48
0
60
4
20
8
V
GS,
GA
TE
T
O
SOURCE
V
O
L
T
A
GE (V)
16
V
DS
= 400V
I
D
= 8A
V
DS
= 250V
V
DS
= 100V
12
0
IRFP440
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