2003 Fairchild Semiconductor Corporation
June 2003
IS
L
9
N3
06AD
3
/
IS
L
9
N30
6
AD3
S
T
ISL9N306AD3 / ISL9N306AD3ST Rev. B2
SOURCE
ISL9N306AD3 / ISL9N306AD3ST
N-Channel Logic Level PWM Optimized UltraFET
Trench Power MOSFETs
30V, 50A, 6m
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.0052
(Typ), V
GS
= 10V
r
DS(ON)
= 0.0085
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 30nC, V
GS
= 5V
Q
gd
(Typ) = 11nC
C
ISS
(Typ) = 3400pF
MOSFET Maximum Ratings
T
A
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
30
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current
50
A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
50
A
Continuous (T
C
= 25
o
C, V
GS
= V, R
JC
= 52
o
C/W) 16
A
Pulsed
Figure 4
A
P
D
Power dissipation
Derate above 25
o
C
125
0.83
W
W/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
R
JC
Thermal Resistance Junction to Case TO-251, TO-252
1.2
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-251, TO-252
100
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
52
o
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
N306AD
ISL9N306AD3ST
TO-252AA
330mm
16mm
2500 units
N306AD
ISL9N306AD3
TO-251AA
Tube
N/A
75 units
GATE
DRAIN (FLANGE)
D
G
S
TO-252
(FLANGE)
DRAIN
GATE
DRAIN
SOURCE
TO-251
2003 Fairchild Semiconductor Corporation
ISL9N306AD3 / ISL9N306AD3ST Rev. B2
IS
L
9
N3
06AD
3
/
IS
L
9
N30
6
AD3
S
T
Electrical Characteristics
T
A
= 25C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 4.5V)
Switching Characteristics
(V
GS
= 10V)
Unclamped Inductive Switching
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
30
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 25V
-
-
1
A
V
GS
= 0V
T
C
= 150
o
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
=
20V
-
-
100
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
1
-
3
V
r
DS(ON)
Drain to Source On Resistance
I
D
= 50A, V
GS
= 10V
-
0.0052
0.0060
I
D
= 50A, V
GS
= 4.5V
-
0.0085
0.0095
C
ISS
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
3400
-
pF
C
OSS
Output Capacitance
-
650
-
pF
C
RSS
Reverse Transfer Capacitance
-
300
-
pF
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V
V
DD
= 15V
I
D
= 50A
I
g
= 1.0mA
-
60
90
nC
Q
g(5)
Total Gate Charge at 5V
V
GS
= 0V to 5V
-
30
45
nC
Q
g(TH)
Threshold Gate Charge
V
GS
= 0V to 1V
-
3.0
4.5
nC
Q
gs
Gate to Source Gate Charge
-
10
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
11
-
nC
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 16A
V
GS
= 4.5V, R
GS
= 4.3
-
-
131
ns
t
d(ON)
Turn-On Delay Time
-
16
-
ns
t
r
Rise Time
-
70
-
ns
t
d(OFF)
Turn-Off Delay Time
-
34
-
ns
t
f
Fall Time
-
30
-
ns
t
OFF
Turn-Off Time
-
-
97
ns
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 16A
V
GS
= 10V, R
GS
= 4.3
-
-
80
ns
t
d(ON)
Turn-On Delay Time
-
10
-
ns
t
r
Rise Time
-
43
-
ns
t
d(OFF)
Turn-Off Delay Time
-
62
-
ns
t
f
Fall Time
-
29
-
ns
t
OFF
Turn-Off Time
-
-
137
ns
t
AV
Avalanche Time
I
D
= 30A, L = 200
H
428
-
-
s
V
SD
Source to Drain Diode Voltage
I
SD
= 50A
-
-
1.25
V
I
SD
= 25A
-
-
1.0
V
t
rr
Reverse Recovery Time
I
SD
= 50A, dI
SD
/dt = 100A/
s
-
-
35
ns
Q
RR
Reverse Recovered Charge
I
SD
= 50A, dI
SD
/dt = 100A/
s
-
-
30
nC
2003 Fairchild Semiconductor Corporation
ISL9N306AD3 / ISL9N306AD3ST Rev. B2
IS
L
9
N3
06AD
3
/
IS
L
9
N30
6
AD3
S
T
Typical Characteristic
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
O
W
E
R DIS
S
IP
A
T
IO
N M
U
L
T
IP
L
I
E
R
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
10
20
30
40
50
60
25
50
75
100
125
150
175
I
D
, DRAIN CURRE
NT
(
A
)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
JC
, NO
RM
AL
IZ
E
D
T
H
E
R
M
A
L
IM
P
E
D
ANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
DM
, P
E
AK CURRE
NT
(
A
)
t, PULSE WIDTH (s)
T
C
= 25
o
C
I = I
25
175 T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
100
1000
40
2000
2003 Fairchild Semiconductor Corporation
ISL9N306AD3 / ISL9N306AD3ST Rev. B2
IS
L
9
N3
06AD
3
/
IS
L
9
N30
6
AD3
S
T
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic
(Continued)
0
25
50
75
100
1
2
3
4
5
I
D
,
DR
AIN CURRE
NT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= -55
o
C
T
J
= 175
o
C
T
J
= 25
o
C
0
25
50
75
100
0
0.5
1.0
1.5
2.0
I
D
, DRAIN CU
RRE
NT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 4.5V
5
10
15
20
25
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS
(
O
N)
, DRAIN T
O
S
O
URCE
O
N
RE
S
I
S
T
ANCE
(
m
)
I
D
=5A
I
D
= 50A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
I
D
= 25A
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
200
NO
RM
AL
IZ
E
D
DRAIN T
O
S
O
URCE
T
J
, JUNCTION TEMPERATURE (
o
C)
O
N
RE
S
I
S
T
ANCE
V
GS
= 10V, I
D
= 50A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.2
0.6
1.0
1.4
-80
-40
0
40
80
120
160
200
NO
RM
AL
IZ
E
D
G
A
T
E
T
J
, JUNCTION TEMPERATURE (
o
C)
T
HRE
S
H
O
L
D V
O
L
T
A
G
E
V
GS
= V
DS
, I
D
= 250
A
0.9
1.0
1.1
-80
-40
0
40
80
120
160
200
1.2
T
J
, JUNCTION TEMPERATURE (
o
C)
NO
RM
AL
IZ
E
D
DRAIN T
O
S
O
URCE
BRE
AKDO
W
N
V
O
L
T
A
G
E
I
D
= 250
A
2003 Fairchild Semiconductor Corporation
ISL9N306AD3 / ISL9N306AD3ST Rev. B2
IS
L
9
N3
06AD
3
/
IS
L
9
N30
6
AD3
S
T
Figure 11. Capacitance vs Drain to Source
Voltage
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Typical Characteristic
(Continued)
1000
0.1
1
10
5000
100
30
C, CAP
A
C
IT
AN
CE
(
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
10
20
30
40
50
60
V
GS
, G
A
T
E
T
O
S
O
URCE
V
O
L
T
A
G
E
(
V
)
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 50A
I
D
= 25A
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 5A
0
50
100
150
200
250
300
0
10
20
30
40
50
S
W
IT
CHING
T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 16A
t
r
t
d(ON)
t
f
t
d(OFF)
0
100
200
300
400
500
0
10
20
30
40
50
S
W
IT
CHING
T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
t
d(OFF)
t
r
t
d(ON)
t
f
V
GS
= 10V, V
DD
= 15V, I
D
= 16A
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
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