2002 Fairchild Semiconductor Corporation
November 2002
I
S
L9R1560G
2,
I
S
L9R1560P
2, IS
L
9
R
1
560S2,
ISL9R156
0S3S
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
15A, 600V StealthTM Diode
General Description
The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2 and
ISL9R1560S3S are StealthTM diodes optimized for low loss
performance in high frequency hard switched applications. The
StealthTM family exhibits low reverse recovery current
(I
RM(REC)
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
RM(REC)
and short t
a
phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the StealthTM diode with an SMPS IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49410
.
Features
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 1.2
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 30ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Avalanche Energy Rated
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
RRM
Repetitive Peak Reverse Voltage
600
V
V
RWM
Working Peak Reverse Voltage
600
V
V
R
DC Blocking Voltage
600
V
I
F(AV)
Average Rectified Forward Current (T
C
= 145
o
C)
15
A
I
FRM
Repetitive Peak Surge Current (20kHz Square Wave)
30
A
I
FSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
200
A
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC STYLE TO-262
JEDEC TO-220AC
CATHODE
(FLANGE)
ANODE
N/C
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC TO-263AB
CATHODE
(BOTTOM SIDE
CATHODE
ANODE
METAL)
JEDEC STYLE TO-247
Package
Symbol
2002 Fairchild Semiconductor Corporation
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
I
S
L9R1560G
2,
I
S
L9R1560P
2, IS
L
9
R
1
560S2,
ISL9R156
0S3S
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
P
D
Power Dissipation
150
W
E
AVL
Avalanche Energy (1A, 40mH)
20
mJ
T
J
, T
STG
Operating and Storage Temperature Range
-55 to 175
C
T
L
T
PKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
C
C
CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Device Marking
Device
Package
Tape Width
Quantity
R1560G2
ISL9R1560G2
TO-247
N/A
30
R1560P2
ISL9R1560P2
TO-220AC
N/A
50
R1560S2
ISL9R1560S2
TO-262
N/A
50
R1560S3S
ISL9R1560S3S
TO-263AB
24mm
800
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
R
Instantaneous Reverse Current
V
R
= 600V
T
C
= 25C
-
-
100
A
T
C
= 125C
-
-
1.0
mA
V
F
Instantaneous Forward Voltage
I
F
= 15A
T
C
= 25C
-
1.8
2.2
V
T
C
= 125C
-
1.65
2.0
V
C
J
Junction Capacitance
V
R
= 10V, I
F
= 0A
-
62
-
pF
t
rr
Reverse Recovery Time
I
F
= 1A, dI
F
/dt = 100A/
s, V
R
= 30V
-
25
30
ns
I
F
= 15A, dI
F
/dt = 100A/
s, V
R
= 30V
-
35
40
ns
t
rr
Reverse Recovery Time
I
F
= 15A,
dI
F
/dt = 200A/
s,
V
R
= 390V, T
C
= 25C
-
29.4
-
ns
I
RM(REC)
Maximum Reverse Recovery Current
-
3.5
-
A
Q
RR
Reverse Recovered Charge
-
57
-
nC
t
rr
Reverse Recovery Time
I
F
= 15A,
dI
F
/dt = 200A/
s,
V
R
= 390V,
T
C
= 125C
-
90
-
ns
S
Softness Factor (t
b
/t
a
)
-
2.0
-
I
RM(REC)
Maximum Reverse Recovery Current
-
5.0
-
A
Q
RR
Reverse Recovered Charge
-
275
-
nC
t
rr
Reverse Recovery Time
I
F
= 15A,
dI
F
/dt = 800A/
s,
V
R
= 390V,
T
C
= 125C
-
52
-
ns
S
Softness Factor (t
b
/t
a
)
-
1.36
-
I
RM(REC)
Maximum Reverse Recovery Current
-
13.5
-
A
Q
RR
Reverse Recovered Charge
-
390
-
nC
dI
M
/dt
Maximum di/dt during t
b
-
800
-
A/s
R
JC
Thermal Resistance Junction to Case
-
-
1.0
C/W
R
JA
Thermal Resistance Junction to Ambient TO-247
-
-
30
C/W
R
JA
Thermal Resistance Junction to Ambient TO-220
-
-
62
C/W
R
JA
Thermal Resistance Junction to Ambient TO-262
-
-
62
C/W
R
JA
Thermal Resistance Junction to Ambient TO-263
-
-
62
C/W
Symbol
Parameter
Ratings
Units
2002 Fairchild Semiconductor Corporation
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
I
S
L9R1560G
2,
I
S
L9R1560P
2, IS
L
9
R
1
560S2,
ISL9R156
0S3S
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage
Figure 2. Reverse Current vs Reverse Voltage
Figure 3. t
a
and t
b
Curves vs Forward Current
Figure 4. t
a
and t
b
Curves vs dI
F
/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI
F
/dt
V
F
, FORWARD VOLTAGE (V)
I
F
, F
O
R
W
ARD CURRE
NT
(
A
)
30
25
20
0
0.5
1.0
1.25
2.0
2.25
175
o
C
25
o
C
100
o
C
125
o
C
150
o
C
15
10
5
0.75
1.5
1.75
10
V
R
, REVERSE VOLTAGE (V)
I
R
, REVE
RSE CUR
RENT
(
A)
100
100
200
500
600
400
1000
1
0.1
175
o
C
25
o
C
100
o
C
300
4000
75
o
C
150
o
C
125
o
C
I
F
, FORWARD CURRENT (A)
0
0
20
40
60
80
100
10
30
t
,
RE
CO
VE
R
Y
TI
M
ES (
n
s
)
t
b
AT dI
F
/dt = 200A/s, 500A/s, 800A/s
V
R
= 390V, T
J
= 125C
5
15
20
25
t
a
AT dI
F
/dt = 200A/s, 500A/s, 800A/s
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
0
20
40
60
80
100
t
,
RECO
VER
Y T
I
M
E
S (
n
s
)
V
R
= 390V, T
J
= 125C
t
b
AT I
F
= 30A, 15A, 7.5A
1000
1600
1400
400
200
600
800
1200
t
a
AT I
F
= 30A, 15A, 7.5A
I
F
, FORWARD CURRENT (A)
2
6
8
10
12
14
16
I
RM
(
R
EC
)
,
M
A
X
R
EVE
RSE RE
CO
VE
R
Y
CURRENT
(
A
)
dI
F
/dt = 800A/s
dI
F
/dt = 500A/s
dI
F
/dt = 200A/s
V
R
= 390V, T
J
= 125C
0
10
30
5
15
20
25
4
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
0
5
10
15
20
25
1000
1600
V
R
= 390V, T
J
= 125C
I
F
= 30A
I
F
= 7.5A
I
F
= 15A
1400
400
200
600
800
1200
I
RM
(
R
EC)
, M
A
X RE
VERS
E
RECO
VER
Y CURRE
NT
(
A
)
2002 Fairchild Semiconductor Corporation
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
I
S
L9R1560G
2,
I
S
L9R1560P
2, IS
L
9
R
1
560S2,
ISL9R156
0S3S
Figure 7. Reverse Recovery Softness Factor vs
dI
F
/dt
Figure 8. Reverse Recovered Charge vs dI
F
/dt
Figure 9. Junction Capacitance vs Reverse
Voltage
Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves (Continued)
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
0.5
1.0
1.5
2.0
2.5
V
R
= 390V, T
J
= 125C
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
S,
RE
VERS
E
RECO
VER
Y S
O
F
T
N
ESS
F
A
CT
O
R
1000
1600
1400
400
200
600
800
1200
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
200
300
400
500
600
700
V
R
= 390V, T
J
= 125C
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
Q
RR
, REV
E
RS
E RECO
VERE
D
CHARGE (
n
C)
1000
1600
1400
400
200
600
800
1200
400
0
800
600
200
1200
V
R
, REVERSE VOLTAGE (V)
C
J
, J
U
NCT
ION CAP
A
C
IT
ANCE (
p
F
)
0.1
1
100
10
1000
4
0
150
155
165
140
175
160
12
14
16
T
C
, CASE TEMPERATURE (
o
C)
I
F(
A
V
)
,
A
V
ERA
G
E F
O
R
W
ARD CURRENT
(
A
)
170
145
2
10
6
8
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-2
10
-1
Z
JA
,
NORM
AL
IZ
E
D
T
H
ERM
A
L
I
M
PE
D
ANCE
0.01
10
-4
10
-3
SINGLE PULSE
10
0
0.1
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
1.0
2002 Fairchild Semiconductor Corporation
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
I
S
L9R1560G
2,
I
S
L9R1560P
2, IS
L
9
R
1
560S2,
ISL9R156
0S3S
Figure 12. t
rr
Test Circuit
Figure 13. t
rr
Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage
Waveforms
Typical Performance Curves (Continued)
R
G
L
V
DD
MOSFET
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 1A
L = 40mH
V
DD
= 50V
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
Test Circuit and Waveforms
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